Search Results - "Travaly, Y."

Integration challenges of copper Through Silicon Via (TSV) metallization for 3D-stacked IC integration by Olmen, J. Van, Huyghebaert, C., Coenen, J., Aelst, J. Van, Sleeckx, E., Ammel, A. Van, Armini, S., Katti, G., Vaes, J., Dehaene, W., Beyne, E., Travaly, Y.

“…In this paper we will highlight key integration issues that were encountered during the development of the 3D-stacked IC Through Silicon Via (TSV) module and…”
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Challenges in the implementation of low-k dielectrics in the back-end of line by Hoofman, R.J.O.M., Verheijden, G.J.A.M., Michelon, J., Iacopi, F., Travaly, Y., Baklanov, M.R., Tökei, Zs, Beyer, G.P.

“…The introduction of ultra low-k materials in copper technology has been much slower than anticipated in the ITRS Roadmap. The introduction of porosity in low-k…”
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Selective self-assembled monolayer coating to enable Cu-to-Cu connection in dual damascene vias by Maestre Caro, A., Travaly, Y., Beyer, G., Tokei, Z., Maes, G., Borghs, G., Armini, S.

“…In order to enable an oxide-free Cu-to-Cu bonding in a (dual) damascene process, 3-aminopropyltrimethoxysilane- and decanethiol-derived self-assembled…”
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Thermomechanical properties of thin organosilicate glass films treated with ultraviolet-assisted cure by Iacopi, F., Beyer, G., Travaly, Y., Waldfried, C., Gage, D.M., Dauskardt, R.H., Houthoofd, K., Jacobs, P., Adriaensens, P., Schulze, K., Schulz, S.E., List, S., Carlotti, G.

“…Ultraviolet (UV)-assisted cure has recently been reported as an efficient method to enhance the mechanical properties of organosilicate glasses (OSG) at the…”
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Processing assessment and adhesion evaluation of copper through-silicon vias (TSVs) for three-dimensional stacked-integrated circuit (3D-SIC) architectures by Yang, Y., Labie, R., Ling, F., Zhao, C., Radisic, A., Van Olmen, J., Travaly, Y., Verlinden, B., De Wolf, I.

“…Through-silicon vias (TSVs) are critical components in most 3D architectures. In this paper, fully filled cylindrical Cu TSVs with a diameter of 5 μm and a…”
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Challenges for structural stability of ultra-low- k-based interconnects by Iacopi, F, Brongersma, S.H, Vandevelde, B, O'Toole, M, Degryse, D, Travaly, Y, Maex, K

“…Severe mechanical loads during multilevel metallization manufacturing, such as repeated thermal cycles and chemical–mechanical planarization processes, can…”
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Air gap formation by UV-assisted decomposition of CVD material by Pantouvaki, M., Humbert, A., VanBesien, E., Camerotto, E., Travaly, Y., Richard, O., Willegems, M., Volders, H., Kellens, K., Daamen, R., Hoofman, R.J.O.M., Beyer, G.

“…A sacrificial material deposited by CVD is used to demonstrate air gap formation in single damascene structures by UV-assisted decomposition. The material is…”
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Minimizing plasma damage and in situ sealing of ultralow- k dielectric films by using oxygen free fluorocarbon plasmas by Mannaert, G., Baklanov, M. R., Le, Q. T., Travaly, Y., Boullart, W., Vanhaelemeersch, S., Jonas, A. M.

“…Ultralow- k nanocrystalline silica films with an open porosity of 30–31% and a pore radius of 0.8–0.9 nm have been etched using oxygen free highly polymerizing…”
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Stress corrosion of organosilicate glass films in aqueous environments: Role of pH by Iacopi, F., Elia, C., Fournier, T., Sinapi, F., Travaly, Y.

“…Subcritical cracking of thin glass films caused by stress-corrosion phenomena cannot be neglected when it comes to application and manufacturing processes that…”
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Variation in process conditions of porogen-based low- k films: A method to improve performance without changing existing process steps in a sub-100 nm Cu damascene integration route by De Roest, D., Travaly, Y., Beynet, J., Sprey, H., Labat, J., Huffman, C., Verdonck, P., Kaneko, S., Matsushita, K., Kobayashi, N., Beyer, G.

“…This article describes less explored solutions to improve interconnect performance without changing established steps (etch, strip, clean, CMP) in a sub-100 nm…”
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Materials characterization of WNxCy, WNx and WCx films for advanced barriers by Volders, H, Tokei, Z, Bender, H, Brijs, B, Caluwaerts, R, Carbonell, L, Conard, T, Drijbooms, C, Franquet, A, Garaud, S, Hoflijk, I, Moussa, A, Sinapi, F, Travaly, Y, Vanhaeren, D, Vereecke, G, Zhao, C, Li, W-M, Sprey, H

“…A ternary WNxCy system was deposited in a thermal ALD (atomic layer deposition) reactor from ASM at 300 deg C in a process sequence using tungsten hexafluoride…”
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Surface properties restoration and passivation of high porosity ultra low- k dielectric ( k ∼ 2.3) after direct-CMP by Sinapi, F., Heylen, N., Travaly, Y., Vereecke, G., Baklanov, M., Kesters, E., Van Hoeymissen, J., Hernandèz, J.L., Beyer, G., Fischer, P.

“…Surface hydrophilisation and effective k-value degradation have been reported in literature after direct-CMP of high porosity SiOC films (without a protective…”
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Extent of plasma damage to porous organosilicate films characterized with nanoindentation, x-ray reflectivity, and surface acoustic waves by Iacopi, F., Travaly, Y., Van Hove, M., Jonas, A.M., Molina-Aldareguia, J.M., Elizalde, M.R., Ocaña, I.

“…It is known that porous organosilicate glass (OSG) dielectrics tend to lose functional groups and become denser upon the chemical and physical action of the…”
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A novel approach to resistivity and interconnect modeling by Travaly, Y., Bamal, M., Carbonell, L., Iacopi, F., Stucchi, M., Van Hove, M., Beyer, G.P.

“…This paper describes a simple and novel approach to calculate the line resistance of copper interconnects. The proposed methodology is simply based on a linear…”
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Polymer metallization: Low energy ion beam surface modification to improve adhesion by Bertrand, P, Lambert, P, Travaly, Y

“…The interface formation between copper and poly(ethylene terephthalate) (PET) and poly(methyl methacrylate) (PMMA) films is studied in situ by Ion Scattering…”
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Study of thermal stability of nickel silicide by X-ray reflectivity by Van Hove, M., Travaly, Y., Sajavaara, T., Brijs, B., Vandervorst, W., Lauwers, A., Chamirian, O., Kittl, J.A., Jonas, A.M., Maex, K.

“…The thermal stability of Ni silicide, in comparison to the more conventionally used Co silicide, is studied by X-ray reflectivity. These data were complemented…”
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On a More Accurate Assessment of Scaled Copper/Low-k Interconnects Performance by Travaly, Y., Mandeep, B., Carbonell, L., Tokei, Z., Van Olmen, J., Iacopi, F., Van Hove, M., Stucchi, M., Maex, K.

“…Interconnect RC delay, predominantly affected by the effective dielectric constant (k-value) and by the copper resistivity (rho Cu ), is an important…”
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Impact of thinning and through silicon via proximity on High-k / Metal Gate first CMOS performance by Mercha, A, Redolfi, A, Stucchi, M, Minas, N, Van Olmen, J, Thangaraju, S, Velenis, D, Domae, S, Yang, Y, Katti, G, Labie, R, Okoro, C, Zhao, M, Asimakopoulos, P, De Wolf, I, Chiarella, T, Schram, T, Rohr, E, Van Ammel, A, Jourdain, A, Ruythooren, W, Armini, S, Radisic, A, Philipsen, H, Heylen, N, Kostermans, M, Jaenen, P, Sleeckx, E, Sabuncuoglu Tezcan, D, Debusschere, I, Soussan, P, Perry, D, Van der Plas, G, Cho, J H, Marchal, P, Travaly, Y, Beyne, E, Biesemans, S, Swinnen, B

“…3D integration has the potential to alleviate the performance limitations that CMOS scaling is facing provided that it preserves the integrity of both front…”
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Characterization of atomic layer deposited nanoscale structure on dense dielectric substrates by X-ray reflectivity by Travaly, Y., Schuhmacher, J., Hoyas, A. Martin, Abell, T., Sutcliffe, V., Jonas, A.M., Van Hove, M., Maex, K.

“…Interfaces play a crucial role in determining the ultimate properties of nanoscale structures. However, the characterization of such structures is difficult,…”
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Comprehensive analysis of the impact of single and arrays of through silicon vias induced stress on high-k / metal gate CMOS performance by Mercha, A, Van der Plas, G, Moroz, V, De Wolf, I, Asimakopoulos, P, Minas, N, Domae, S, Perry, D, Choi, M, Redolfi, A, Okoro, C, Yang, Y, Van Olmen, J, Thangaraju, S, Tezcan, D S, Soussan, P, Cho, J H, Yakovlev, A, Marchal, P, Travaly, Y, Beyne, E, Biesemans, S, Swinnen, B

“…As scaling becomes increasingly difficult, 3D integration has emerged as a viable alternative to achieve the requisite bandwidth and power efficiency…”
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