Search Results - "Toshiaki Makabe, Toshiaki Makabe"
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Current status and nature of high-frequency electronegative plasmas: basis for material processing in device manufacturing
Published in Japanese Journal of Applied Physics (01-11-2019)“…A non-equilibrium electronegative plasma serves as the reactive source for semiconductor dry processing as an advanced technology. This paper reviews the…”
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2
Spatial distribution of nonemissive metastables in a two-frequency capacitively coupled plasma in Ar by using a pair of optical emission lines
Published in Applied physics letters (15-03-2010)“…When a pair of short- and long-lived excited molecules are coupled with an upper radiative state, it will be possible to derive the number density of the…”
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3
Effect of local gas heating on a plasma structure driven at radio frequency in a microcell in Ar at atmospheric pressure
Published in Japanese Journal of Applied Physics (01-03-2014)“…In a microplasma in Ar confined at atmospheric pressure, driven at 13.56 MHz, we theoretically investigate the whole structure of a low-temperature plasma…”
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4
Monte Carlo analysis of ionization effects on spatiotemporal electron swarm development
Published in The European physical journal. D, Atomic, molecular, and optical physics (01-06-2014)“…The explicit impact of ionization dynamics on the non-hydrodynamic spatiotemporal development of electron swarms in gases under the influence of an electric…”
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5
Sustainability of active bulk plasma with high electronegativity in capacitive high frequency plasma
Published in Japanese Journal of Applied Physics (01-02-2022)“…In a high-frequency capacitively coupled plasma (HF-CCP), few studies have been carried out for the transport of charged particles in the active bulk plasma…”
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6
Increased O ( D 1 ) metastable density in highly Ar-diluted oxygen plasmas
Published in Applied physics letters (27-02-2006)“…Enhancement of the growth rate of Si O 2 with a rare gas diluted O 2 plasma is of interest for application to various microelectronics fabrications. The key is…”
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7
The effect of topographical local charging on the etching of deep-submicron structures in SiO2 as a function of aspect ratio
Published in Applied physics letters (12-02-2001)“…Physical and electrical influences on plasma etching on the inside of a microtrench in SiO2 were numerically investigated using Monte Carlo simulation of ions…”
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8
Self-Consistent Modeling of Feature Profile Evolution in Plasma Etching and Deposition
Published in Japanese Journal of Applied Physics (01-02-2006)Get full text
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9
Vertically integrated computer-aided design for device processing
Published in Applied surface science (30-05-2002)“…The status of a series of numerical modelings of plasma etching processes is overviewed. Almost all models of low-temperature plasma, which were proposed in…”
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Journal Article Conference Proceeding -
10
Drift Velocities of Electrons in Time Varying Electric Fields
Published in Japanese Journal of Applied Physics (01-10-1999)“…Monte Carlo simulations of electron transport have been performed in methane for time resolved rf fields under conditions where negative differential…”
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11
Modeling of Si Etching Under Effects of Plasma Molding in Two-Frequency Capacitively Coupled Plasma in \hbox/\hbox for MEMS Fabrication
Published in IEEE transactions on plasma science (01-10-2007)“…We numerically investigated Si deep etching with several hundreds of micrometers such as that used in microelectromechanical system fabrication. This was…”
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12
Time dependent RF swarm transport by direct numerical procedure of the Boltzmann equation
Published in Japanese Journal of Applied Physics (1994)“…Electron swarm transport in rf fields under spatial homogeneity has been investigated by a direct numerical procedure (DNP) of the Boltzmann equation. The…”
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Conference Proceeding Journal Article -
13
A Novel Sustaining Mechanism in Capacitively Coupled Radio Frequency Plasma in Oxygen
Published in Japanese Journal of Applied Physics (01-07-1998)Get full text
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14
Numerical Study of the Effects of Frequency in Inductively Coupled Plasma Using Particle-in-Cell/Monte Carlo Simulation
Published in Japanese Journal of Applied Physics (01-03-2000)“…The effects of induction frequency on inductively coupled plasma (ICP) have been investigated in a collision-dominated region in Ar under a constant dissipated…”
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15
Two-Dimensional Modeling of Spatiotemporal Structure of Inductively Coupled Plasma
Published in Japanese Journal of Applied Physics (01-07-1999)“…An inductively coupled plasma (ICP) is one of the candidates for a high density, large area and uniform plasma source for use in plasma processing even under…”
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16
A Numerical Study of a Collision-Dominated Inductively Coupled Plasma Using Particle-in-Cell/Monte Carlo Simulation
Published in Japanese Journal of Applied Physics (01-07-1999)“…The deposition of power into electrons and ions in a collision-dominated inductively coupled plasma has been investigated in Ar in a cylindrical reactor wound…”
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17
Theoretical analysis of electron velocity distribution functions and transport coefficients in HCl in a DC electric field
Published in Japanese Journal of Applied Physics (01-02-1993)“…The electron transport parameters in HCl in a DC electric field have been calculated over a wide range of reduced field strength E / N , 1≤ E / N ≤2000 Td…”
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18
Numerical simulation of the discharge in d.c. magnetron sputtering
Published in Thin solid films (01-08-1999)“…Numerical simulation of d.c. magnetron discharge for sputtering in Ar is performed using a hybrid model consisting of a particle model and a fluid model. The…”
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Conference Proceeding Journal Article -
19
Diagnostics of an inductively coupled CF4/Ar plasma
Published in Journal of vacuum science & technology. A, Vacuum, surfaces, and films (01-05-2000)“…Experimental data for radiative and metastable state densities in pure argon and in mixture of 5% CF4 in argon are obtained to study the effect of CF4 on…”
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20
Dependence of Driving Frequency on Capacitively Coupled Plasma in CF 4
Published in Japanese Journal of Applied Physics (01-07-1999)“…A radio-frequency CF 4 plasma in reactive-ion etcher with parallel plate geometry is investigated in one dimension at a position space using the relaxation…”
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