First failure predictions for EPROMs of the type flown on the MPTB satellite

First failure predictions for EPROMs of the type flown on the MPTB satellite

Extreme value analysis applied to ground test data provides a new method for predicting the first cell to fail in an array of EPROM memory cells exposed to ionizing radiation. Which cell fails first is a function of the dose absorbed by each as well as the cell-to-cell variations in manufacturing wi...

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Bibliographic Details
Published in:IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2237 - 2243
Main Authors: McNulty, P.J., Scheick, L.Z., Roth, D.R., Davis, M.G., Tortora, M.R.S.
Format: Journal Article
Language:English
Published: New York IEEE 01-12-2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Arrays
Electrons
EPROM
Extreme values
Failure analysis
Fluctuation
Fluctuations
Gates
Grounds
Ionizing radiation
Nonvolatile memory
Physics
Satellites
Space technology
Testing
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Summary:Extreme value analysis applied to ground test data provides a new method for predicting the first cell to fail in an array of EPROM memory cells exposed to ionizing radiation. Which cell fails first is a function of the dose absorbed by each as well as the cell-to-cell variations in manufacturing with processing variations apparently dominating fluctuations in absorbed dose. The method is applied to the ground controls of UVPROMs flown on MPTB. These procedures can be used to screen devices for flight parts. Power-law dependence between the rate of electrons leaving the floating gate and the absorbed dose is observed, and it may explain the SEU immunity observed in EPROM memory cells flown in space.
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ISSN:0018-9499
1558-1578
DOI:10.1109/23.903759