Search Results - "Torrengo, Simona"
-
1
Micro LED performance - a cathodoluminescence study
Published in BIO web of conferences (01-01-2024)Get full text
Journal Article -
2
Intrinsic Flexibility beyond the Highly Ordered DNA Tetrahedron: An Integrative Spectroscopic and Molecular Dynamics Approach
Published in The journal of physical chemistry letters (09-11-2023)“…Since the introduction of DNA-based architectures, in the past decade, DNA tetrahedrons have aroused great interest. Applications of such nanostructures…”
Get full text
Journal Article -
3
Nanoscale Mapping of the Structural Relaxation in Microstructured In x Ga 1− x N Pseudosubstrates by Scanning X‐ray Diffraction Microscopy
Published in Physica status solidi. PSS-RRL. Rapid research letters (08-11-2024)“…The technological advancement of mobile devices for virtual and augmented reality requires displays that are faster, more energy‐efficient, and of higher…”
Get full text
Journal Article -
4
Characterization of unintentional doping in localized epitaxial GaN layers on Si wafers by scanning spreading resistance microscopy
Published in Microelectronic engineering (15-03-2023)“…Localized epitaxy of gallium nitride (GaN) on silicon (Si) is studied, with the aim of achieving material compatible with 1200 V vertical devices, in…”
Get full text
Journal Article -
5
Localized Epitaxial Growth of 402V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200mm‐Diameter Wafers
Published in Physica status solidi. A, Applications and materials science (01-11-2024)“…Localized epitaxy of gallium nitride (GaN) on silicon (Si) wafers is an efficient way to relax elastically the tensile stress generated in the GaN layer after…”
Get full text
Journal Article -
6
Localized Epitaxial Growth of 402 V Breakdown Voltage Quasi‐Vertical GaN‐on‐Si p‐n Diode on 200 mm‐Diameter Wafers
Published in Physica status solidi. A, Applications and materials science (01-11-2024)“…Localized epitaxy of gallium nitride (GaN) on silicon (Si) wafers is an efficient way to relax elastically the tensile stress generated in the GaN layer after…”
Get full text
Journal Article -
7
Influence of Shape and Size on GaN/InGaN μLED Light Emission: A Competition between Sidewall Defects and Light Extraction Efficiency
Published in ACS photonics (15-11-2023)“…Micro light-emitting diodes (μLEDs) are expected to revolutionize the display technology due to their advantages over the current LCD and OLED technology and…”
Get full text
Journal Article -
8
Influence of shape and size on GaN/InGaN µLED light emission: a competition between sidewall defects and light extraction efficiency
Published in ACS photonics (2023)“…Micro light-emitting diodes (µLEDs) are expected to revolutionize the display technology due to their advantages over the current LCD and OLED technology and…”
Get full text
Journal Article -
9
A new polyfunctional acid material for solid state proton conductivity in dry environment: Nafion doped with difluoromethandiphosphonic acid
Published in Solid state ionics (21-05-2010)“…A major application of polyfunctional acid materials is the fabrication of solid electrolytes exhibiting high proton conductivity in the solid state for…”
Get full text
Journal Article -
10
Development of a statistical approach for DNA-based nanowires electrical study
Published in 2015 European Microelectronics Packaging Conference (EMPC) (01-09-2015)“…The last decade, an important effort has been allocated to emergent nanomaterials as an alternative route to current silicon-based technologies in order to…”
Get full text
Conference Proceeding -
11
Deoxyribonucleic Acid for Nanopackaging: A promising bottom-up approach
Published in IEEE nanotechnology magazine (01-03-2017)“…Deoxyribonucleic acid (DNA) is presented as a potential candidate to develop nanopackaging solutions in the field of microelectronics by a bottom-up approach…”
Get full text
Magazine Article