Search Results - "Torelly, Guilherme M."

Tailoring the properties of quantum dot-micropillars by ultrafast optical injection of free charge carriers by Peinke, Emanuel, Sattler, Tobias, Torelly, Guilherme M., Souza, Patricia L., Perret, Sylvain, Bleuse, Joël, Claudon, Julien, Vos, Willem L., Gérard, Jean-Michel

“…We review recent studies of cavity switching induced by the optical injection of free carriers in micropillar cavities containing quantum dots. Using the…”
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Mapping and Optimization of Oscillator Strength in Quantum Bragg Mirror Detectors as a Function of their Dimensions by Ruiz, Jose E., Pereira, Pedro H., Penello, Germano M., Torelly, Guilherme M., Souza, Patricia L., Pires, Mauricio P.

“…In this work, we estimate the oscillator strength of the optical transitions in quantum Bragg mirror detectors (QBMDs) and determine which structure provides…”
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e-mulate: a user-friendly software to calculate optoelectronic properties of quantum well systems by Pereira, Pedro H., Torelly, Guilherme M., Lacerda, Matheus S., Souza, David R., Ruiz, Jose E., Souza, Vinicius R., Chipana, Luis A., Souza, Patricia L., Penello, Germano M., Pires, Mauricio P.

“…We present e - mulate, an user-friendly software developed to calculate the electronic states of quantum well heterostructures. e - mulate was designed with a…”
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Structural optimization of a superlattice infrared photodetector by evolutionary computation algorithms by Povoa, Rogerio Cortez Brito Leite, Pereira, Pedro Henrique, Torelly, Guilherme M., Dias, Douglas Mota, Penello, Germano Maioli, Pires, Mauricio Pamplona, Horta, Bruno Araujo Cautiero, Souza, Patricia Lustoza

“…We present a study of the use of evolutionary computation in the design of a new superlattice infrared photodetector (SLIP). Four optimization algorithms were…”
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Optimizing broadband InGaAs/InP photodetectors for the SWIR range by Rua, Marcelo G., Kawabata, Rudy M. S., Pires, Mauricio P., Ferreira, Carlos L., Torelly, Guilherme M., Souza, Patricia L.

“…Two aspects of pin infrared photodetectors with InGaAs as the active layer for the short-wave infrared range (900 to 1700 nm) were optimized. The first one…”
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Development of Epoxy Bonding Techniques for III-V on Silicon Tandem Solar Cells by Bazilio, Willian M. M., Kawabata, Rudy M. S., Mourao, R. T., Torelly, Guilherme M., de Souza, Patricia L.

“…Tandem solar cells, integrating III-V and silicon materials, represent a promising approach for enhancing the efficiency of silicon solar cells. Several…”
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