Search Results - "Tong, William M"

Circuit Fabrication at 17 nm Half-Pitch by Nanoimprint Lithography by Jung, Gun-Young, Johnston-Halperin, Ezekiel, Wu, Wei, Yu, Zhaoning, Wang, Shih-Yuan, Tong, William M, Li, Zhiyong, Green, Jonathan E, Sheriff, Bonnie A, Boukai, Akram, Bunimovich, Yuri, Heath, James R, Williams, R. Stanley

“…High density metal cross bars at 17 nm half-pitch were fabricated by nanoimprint lithography. Utilizing the superlattice nanowire pattern transfer technique, a…”
Get full text

Plasma-Induced Formation of Ag Nanodots for Ultra-High-Enhancement Surface-Enhanced Raman Scattering Substrates by Li, Zhiyong, Tong, William M, Stickle, William F, Neiman, David L, Williams, R. Stanley, Hunter, Luke L, Talin, A. Alec, Li, D, Brueck, S. R. J

“…We report here plasma-induced formation of Ag nanostructures for surface-enhanced Raman scattering (SERS) applications. An array of uniform Ag patterned…”
Get full text

Improved Pattern Transfer in Nanoimprint Lithography at 30 nm Half-Pitch by Substrate−Surface Functionalization by Jung, Gun-Young, Li, Zhiyong, Wu, Wei, Ganapathiappan, S, Li, Xuema, Olynick, Deirdre L, Wang, S. Y, Tong, William M, Williams, R. Stanley

“…Resist detachment from the substrate during mold−substrate separation is one of the key challenges for nanoimprint lithography as the pitch of features…”
Get full text

Vapor-Phase Self-Assembled Monolayer for Improved Mold Release in Nanoimprint Lithography by Jung, Gun-Young, Li, Zhiyong, Wu, Wei, Chen, Yong, Olynick, Deirdre L, Wang, Shih-Yuan, Tong, William M, Williams, R. Stanley

“…Resist adhesion to the mold is one of the challenges for nanoimprint lithography. The main approach to overcoming it is to apply a self-assembled monolayer of…”
Get full text

Memristor−CMOS Hybrid Integrated Circuits for Reconfigurable Logic by Xia, Qiangfei, Robinett, Warren, Cumbie, Michael W, Banerjee, Neel, Cardinali, Thomas J, Yang, J. Joshua, Wu, Wei, Li, Xuema, Tong, William M, Strukov, Dmitri B, Snider, Gregory S, Medeiros-Ribeiro, Gilberto, Williams, R. Stanley

“…Hybrid reconfigurable logic circuits were fabricated by integrating memristor-based crossbars onto a foundry-built CMOS (complementary…”
Get full text

Sub-10 nm Nanoimprint Lithography by Wafer Bowing by Wu, Wei, Tong, William M, Bartman, Jonathan, Chen, Yufeng, Walmsley, Robert, Yu, Zhaoning, Xia, Qiangfei, Park, Inkyu, Picciotto, Carl, Gao, Jun, Wang, Shih-Yuan, Morecroft, Deborah, Yang, Joel, Berggren, Karl K, Williams, R. Stanley

“…We introduce the concept of wafer bowing to affect nanoimprinting. This approach allows a design that can fit the key imprinting mechanism into a compact…”
Get full text

Fabrication of a 34 × 34 Crossbar Structure at 50 nm Half-pitch by UV-based Nanoimprint Lithography by Jung, G. Y, Ganapathiappan, S, Ohlberg, Douglas A. A, Olynick, Deirdre L, Chen, Y, Tong, William M, Williams, R. Stanley

“…We have developed a single-layer UV-nanoimprint process, which was utilized to fabricate 34 × 34 crossbar circuits with a half-pitch of 50 nm (equivalent to a…”
Get full text

Radiation Hardness of Memristive Junctions by Tong, William M, Yang, J Joshua, Kuekes, Philip J, Stewart, Duncan R, Williams, R Stanley, DeIonno, Erica, King, Everett E, Witczak, Steven C, Looper, Mark D, Osborn, Jon V

“…Semiconducting TiO 2 displays non-volatile multi-state, hysteretic behavior in its I-V characteristics that can be exploited as a memory material in a…”
Get full text

Nanoclusters of MoO3−x embedded in an Al2O3 matrix engineered for customizable mesoscale resistivity and high dielectric strength by Tong, William M., Brodie, Alan D., Mane, Anil U., Sun, Fuge, Kidwingira, Françoise, McCord, Mark A., Bevis, Christopher F., Elam, Jeffrey W.

“…We have synthesized a material consisting of conducting metal oxide (MoO3−x) nanoclusters embedded in a high-dielectric-strength insulator (Al2O3) matrix. The…”
Get full text

X-ray diffraction and electron spectroscopy of epitaxial molecular Buckminsterfullerene films by Tong, William M, Ohlberg, Douglas A. A, You, Hong K, Williams, R. Stanley, Anz, Samir J, Alvarez, Marcos M, Whetten, Robert L, Rubin, Yves, Diederich, Francois N

Get full text

Atomic force microscope studies of fullerene films - Highly stable C60 fcc (311) free surfaces by Snyder, Eric J., Tong, William M., Williams, R. S., Anz, Samir J., Anderson, Mark S.

“…Atomic force microscopy and X-ray diffractometry were used to study 1500 A-thick films of pure C60 grown by sublimation in ultrahigh vacuum onto a CaF2 (111)…”
Get full text

Radiation effects studies on thin film TiO2 memristor devices by DeIonno, Erica, Looper, Mark D., Osborn, Jon V., Barnaby, Hugh J., Tong, William M.

“…Memristor devices have been identified as potential replacements for a variety of memory applications and may also be suitable for space applications. In this…”
Get full text

Kinetics of Surface Growth: Phenomenology, Scaling, and Mechanisms of Smoothening and Roughening by Tong, W M, Williams, R S

Get full text

Radiation Hardness of rm TiO 2 Memristive Junctions by Tong, William M, Yang, JJoshua, Kuekes, Philip J, Stewart, Duncan R, Williams, RStanley, DeIonno, Erica, King, Everett E, Witczak, Steven C, Looper, Mark D, Osborn, Jon V

“…Semiconducting rm TiO 2 displays non-volatile multi-state, hysteretic behavior in its I hbox - - V characteristics that can be exploited as a memory material…”
Get full text

58.3: Fabrication of Zinc Tin Oxide TFTs by Self-Aligned Imprint Lithography (SAIL) on Flexible Substrates by Jackson, Warren, Taussig, Carl, Elder, Rich, Tong, William M., Hoffman, Randy, Emery, Tim, Smith, Dan, Koch, Tim

“…Zinc tin oxide (ZTO) thin‐film transistors (TFTs) provide attractive performance and are suitable for low‐temperature processes compatible with flexible…”
Get full text

Luminescence and absorption spectra of carbon (C60) films by Reber, Christian, Yee, Lawrence, McKiernan, John, Zink, Jeffrey I, Williams, R. Stanley, Tong, William M, Ohlberg, Douglas A. A, Whetten, Robert L, Diederich, Francois

Get full text

Atomic force microscope study of growth kinetics: Scaling in the heteroepitaxy of CuCl on CaF2(111) by Tong, WM, Williams, RS, Yanase, A, Segawa, Y, Anderson, MS

Get full text

20-Year Experience With Intraoperative High-Dose-Rate Brachytherapy for Pediatric Sarcoma: Outcomes, Toxicity, and Practice Recommendations by Folkert, Michael R., MD, PhD, Tong, William Y., MD, LaQuaglia, Michael P., MD, Wexler, Leonard H., MD, Chou, Alexander J., MD, Magnan, Heather, MD, Zelefsky, Michael J., MD, Wolden, Suzanne L., MD

“…Purpose To assess outcomes and toxicity of high-dose-rate intraoperative radiation therapy (HDR-IORT) in the management of pediatric sarcoma. Methods and…”
Get full text

Luminescence and absorption spectra of C60 films by REBER, C, YEE, L, MCKIERNAN, J, ZINK, J. I, WILLIAMS, R. S, TONG, W. M, OHLBERG, D. A. A, WHETTEN, R. L, DIEDERICH, F

Get full text

Atomic force microscope study of growth kinetics: Scaling in the heteroepitaxy of CuCl on CaF 2 (111) by Tong, William M., Williams, R. Stanley, Yanase, Akihisa, Segawa, Yusaburo, Anderson, Mark S.

Get full text