Search Results - "Tomzig, E"

Numerical investigation of silicon melt flow in large diameter CZ-crystal growth under the influence of steady and dynamic magnetic fields by Virbulis, J, Wetzel, Th, Muiznieks, A, Hanna, B, Dornberger, E, Tomzig, E, Mühlbauer, A, Ammon, W.v

“…Turbulent silicon melt flows are studied in large diameter Czochralski crucibles under the influence of alternating, steady and combined magnetic fields. The…”
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Crystal growth melt flow control by means of magnetic fields by Galindo, V., Gerbeth, G., von Ammon, W., Tomzig, E., Virbulis, J.

“…Contactless melt flow control is important in many crystal growth technologies. Typically, steady magnetic fields are used to damp convective flow. On the…”
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Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

“…We describe a computational model based on Large Eddy Simulation to calculate 3D unsteady turbulent melt convection in Czochralski systems for Si-crystal…”
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Physical modelling of the melt flow during large-diameter silicon single crystal growth by Gorbunov, L., Pedchenko, A., Feodorov, A., Tomzig, E., Virbulis, J., Ammon, W.V.

“…The reported investigations concern physical modelling of Czochralski growth of silicon large-diameter single crystals. InGaSn eutectic was used as a modelling…”
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Prediction of the growth interface shape in industrial 300 mm CZ Si crystal growth by Wetzel, Th, Virbulis, J., Muiznieks, A., von Ammon, W., Tomzig, E., Raming, G., Weber, M.

“…A model approach for a modification of the effective heat conductivity in the turbulent melt flow simulation for 28″ Si CZ crucibles is presented, which helped…”
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Numerical 3D modelling of turbulent melt flow in a large CZ system with horizontal DC magnetic field. II. Comparison with measurements by Krauze, A., Muižnieks, A., Mühlbauer, A., Wetzel, Th, Tomzig, E., Gorbunov, L., Pedchenko, A., Virbulis, J.

“…This paper presents a comparison between numerically calculated and measured temperature distributions in turbulent flow in a laboratory model for a CZ large…”
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Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results by Dornberger, E., Tomzig, E., Seidl, A., Schmitt, S., Leister, H.-J., Schmitt, Ch, Müller, G.

“…Temperatures were measured within an industrial Czochralski silicon puller and compared with simulation results. The temperatures were measured by…”
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Numerical model of turbulent CZ melt flow in the presence of AC and CUSP magnetic fields and its verification in a laboratory facility by Wetzel, Th, Muiznieks, A., Mühlbauer, A., Gelfgat, Y., Gorbunov, L., Virbulis, J., Tomzig, E., Ammon, W.v.

“…The paper describes a numerical simulation tool for heat and mass transfer processes in large diameter CZ crucibles under the influence of several non-rotating…”
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Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts by Gräbner, O., Müller, G., Virbulis, J., Tomzig, E., Ammon, W.v.

“…Magnetic fields are of growing interest for improvement of the silicon Czochralski crystal growth process. The use of steady magnetic fields provides…”
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Analysis of turbulent flow in silicon melts by optical temperature measurement by Gräbner, O, Mühe, A, Müller, G, Tomzig, E, Virbulis, J, von Ammon, W

“…Turbulent convection in silicon melts plays a decisive role for the transport of heat and oxygen during the silicon Czochralski crystal growth. Information on…”
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Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth by Evstratov, I.Yu, Kalaev, V.V., Zhmakin, A.I., Makarov, Yu.N., Abramov, A.G., Ivanov, N.G., Korsakov, A.B., Smirnov, E.M., Dornberger, E., Virbulis, J., Tomzig, E., von Ammon, W.

“…We present a computational model of 3D turbulent melt convection in Czochralski Si-crystal growth systems, based on the hybridization of Reynolds-averaged…”
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Silicon melt convection in large size Czochralski crucibles by Virbulis, J., Wetzel, Th, Tomzig, E., von Ammon, W.

“…The melt flow in large diameter crucibles during the growth of silicon (Si) single crystals of 300 mm diameter is characterized by turbulent large-scale…”
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Oxygen distribution in silicon melt during a standard Czochralski process studied by sensor measurements and comparison to numerical simulation by Mühe, A., Backofen, R., Fainberg, J., Müller, G., Dornberger, E., Tomzig, E., von Ammon, W.

“…The distribution of oxygen in silicon melts kept in a 14″ diameter silica crucible of a standard Czochralski puller was measured using an electrochemical…”
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Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface by Evstratov, I.Yu, Kalaev, V.V, Nabokov, V.N, Zhmakin, A.I, Makarov, Yu.N, Abramov, A.G, Ivanov, N.G, Rudinsky, E.A, Smirnov, E.M, Lowry, S.A, Dornberger, E, Virbulis, J, Tomzig, E, Ammon, W.v

“…A computational model combining calculations of global heat and mass transfer in the entire CZ system with Large Eddy Simulation (LES) of turbulent melt…”
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Study of oxygen transport in Czochralski growth of silicon by Müller, G., Mühe, A., Backofen, R., Tomzig, E., Ammon, W.v.

“…The present status and special features of experimental analysis and numerical modelling of oxygen transport in the Czochralski growth of silicon is treated…”
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Influence of pyrolytic boron nitride crucibles on GaAs crystal growth process and crystal properties by Fischer, L., Lambert, U., Nagel, G., Rüfer, H., Tomzig, E.

“…The influence of pyrolytic boron nitride (pBN) crucibles on the GaAs liquid encapsulated Crochralski (LEC) growth process and on the crystal properties was…”
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Redistribution of Cr in GaAs: Cr and of V in GaAs: V after implantation of Si, Be, or B and annealing in a controlled atmosphere by KÜTT, W, BIMBERG, D, MAIER, M, KRÄUTLE, H, KÖHL, F, TOMZIG, E

“…The redistribution of V in V-doped and Cr in Cr-doped semi-insulating GaAs substrates after implantation with Si, Be, B and subsequent controlled atmosphere…”
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Prediction of the growth interface shape in industrial 300mm CZ Si crystal growth by Wetzel, Th, Virbulis, J., Muiznieks, A., von Ammon, W., Tomzig, E., Raming, G., Weber, M.

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Application of dynamic and combined magnetic fields in the 300mm silicon single-crystal growth by Tomzig, Erich, Virbulis, Janis, von Ammon, Wilfried, Gelfgat, Yuri, Gorbunov, Leonid

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Challenges for economical growth of high quality 300 mm CZ Si crystals by Tomzig, Erich, von Ammon, Wilfried, Dornberger, Erich, Lambert, Ulrich, Zulehner, Werner

“…The changeover from 200 mm to 300 mm is required by the semiconductor industry due to the necessity for larger chip sizes and demand for decreasing cost…”
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