Search Results - "Tompkins, R.P." :: Katalog Arama

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DLTS and MCTS analysis of the influence of growth pressure on trap generation in MOCVD GaN by Shah, P.B., Dedhia, R.H., Tompkins, R.P., Viveiros, E.A., Jones, K.A.

Published in Solid-state electronics (01-12-2012)
“…► DLTS, MCTS and SIMS analyses were performed on MOCVD grown GaN. ► Four majority carrier traps and two minority carrier traps are identified. ► Carbon related…”

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Electrical properties of AlGaN/GaN HEMTs in stretchable geometries by Tompkins, R.P., Mahaboob, I., Shahedipour-Sandvik, F., Lazarus, N.

Published in Solid-state electronics (01-10-2017)
“…•Fabrication of HEMT devices in both wavy stretchable and conventional geometries.•Device properties are unchanged as a result of changing contact…”

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Study of the 2-3 /spl mu/m emission of Cr/sup 2+/ in MBE-grown ZnTe:Cr and ZnSe:Cr epilayers by Ming Luo, VanMil, B.L., Tompkins, R.P., Myers, T.H., Lederman, D., Giles, N.C., Cui, Y., Burger, A.

Published in Conference on Lasers and Electro-Optics, 2003. CLEO '03 (2003)
“…Photoluminescence using both cw and pulsed excitation sources is used to characterize the IR emission of MBE-grown ZnTe:Cr and ZnSe:Cr epilayers. The observed…”

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