Search Results - "Tomosh, K. N."

On the Technology of a Laterally Coupled Bragg Grating of Single-Mode Distributed Feedback Laser Diodes by Galiev, R R, Yu, Pavlov A, Tarasov, N S, Tomosh, K N

“…We report on the successful development and application of the technology of a Bragg diffraction grating for the implementation of a single-mode ridge-type…”
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Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer by Yu, Pavlov A, Tomosh, K N, Yu, Pavlov V, Slapovskiy, D N, Klekovkin, A V, Ivchenko, I A

“…The influence of the thickness of the barrier layer of a nitride heterostructure on the characteristics of field-effect transistors with high electron mobility…”
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Investigation of High-Temperature Generation of Microdisc Lasers with Optically Coupled Waveguide by Fominykh, N. A., Kryzhanovskaya, N. V., Ivanov, K. A., Komarov, S. D., Moiseev, E. I., Nadtochiy, A. M., Guseva, Yu. A., Kulagina, M. M., Mintairov, S. A., Kalyuzhnyy, N. A., Khabibullin, R. A., Galiev, R. R., Pavlov, A. Yu, Tomosh, K. N., Makhov, I. S., Maximov, M. V., Zhukov, A. E.

“…The laser generation characteristics of microdisc lasers with optically coupled waveguide operating in continuous wave mode at elevated temperatures are…”
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Low-Energy Defectless Dry Etching of the AlGaN/AlN/GaN HEMT Barrier Layer by Mikhailovich, S. V., Pavlov, A. Yu, Tomosh, K. N., Fedorov, Yu. V.

“…A method of defectless dry etching of an AlGaN barrier layer is proposed, which consists in repeated plasmachemical oxidation of AlGaN and removal of the oxide…”
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Ku and Ka-band Gallium Nitride Monolithic Integrated Circuits on Silicon Substrates by Fedorov, Yu. V., Bugaev, A. S., Gamkrelidze, S. A., Gnatyuk, D. L., Matveenko, O. S., Pavlov, A. Yu, Galiev, R. R., Zuev, A. V., Maitama, M. V., Shavruk, N. V., Tomosh, K. N.

“…For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed,…”
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Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ Si3N4 passivation by Tomosh, K. N., Pavlov, A. Yu, Pavlov, V. Yu, Khabibullin, R. A., Arutyunyan, S. S., Maltsev, P. P.

“…The optimum mode of the in situ plasma-chemical etching of a Si 3 N 4 passivating layer in C 3 F 8 /O 2 medium is chosen for the case of fabricating…”
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Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructures by Khabibullin, R. A., Shchavruk, N. V., Pavlov, A. Yu, Ponomarev, D. S., Tomosh, K. N., Galiev, R. R., Maltsev, P. P., Zhukov, A. E., Cirlin, G. E., Zubov, F. I., Alferov, Zh. I.

“…The Postgrowth processing of GaAs/AlGaAs multilayer heterostructures for terahertz quantumcascade lasers (QCLs) are studied. This procedure includes the…”
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On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs by Arutyunyan, S. S., Pavlov, A. Yu, Pavlov, B. Yu, Tomosh, K. N., Fedorov, Yu. V.

“…The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown…”
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On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs by Arutyunyan, S. S., Pavlov, A. Yu, Pavlov, B. Yu, Tomosh, K. N., Fedorov, Yu. V.

“…The fabrication of a two-layer Si 3 N 4 /SiO 2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts…”
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Investigation of the fabrication processes of AlGaN/AlN/GaN HEMTs with in situ Si{sub 3}N{sub 4} passivation by Tomosh, K. N., Pavlov, A. Yu, Pavlov, V. Yu, Khabibullin, R. A., Arutyunyan, S. S., Maltsev, P. P.

“…The optimum mode of the in situ plasma-chemical etching of a Si{sub 3}N{sub 4} passivating layer in C{sub 3}F{sub 8}/O{sub 2} medium is chosen for the case of…”
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