Search Results - "Tomich, D. H."

Exploring optimum growth for high quality InAs/GaSb type-II superlattices by Haugan, H.J, Grazulis, L, Brown, G.J, Mahalingam, K, Tomich, D.H

“…Fundamental material issues in the growth of InAs/GaSb type-II superlattice (SL) structures using molecular beam epitaxy (MBE) have been addressed. The effect…”
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Mobility analysis of highly conducting thin films: Application to ZnO by Look, D. C., Leedy, K. D., Tomich, D. H., Bayraktaroglu, B.

“…Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a…”
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Large area Ba1-xSrxTiO3 thin films for microwave applications deposited by pulsed laser ablation by VARANASI, C. V, LEEDY, K. D, TOMICH, D. H, SUBRAMANYAM, G

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Strain relief by surface undulations of dislocation free MBE grown antimonides on compliant universal GaAs substrates by SEAFORD, M. L, HESSE, P. J, TOMICH, D. H, EYINK, K. G

“…Using solid source molecular beam epitaxy (MBE) of gallium antimonide (GaSb) and indium antimonide (InSb), we have demonstrated1 the ability to grow…”
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Optimizing GaSb ( 1 ¯ 1 ¯ 1 ¯ ) and GaSb(001) surfaces for epitaxial film growth by Solomon, J.S., Petry, L., Tomich, D.H.

“…Oxides were grown on acid etched ( 1 ¯ 1 ¯ 1 ¯ ) and GaSb(001) by UV-ozone oxidation. The in-situ thermal desorption of the oxide layers was used to set the…”
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The use of computer controlled group V valved sources for interface type control in InGaSb/InAs strained layer superlattices by SEAFORD, M. L, SOLOMON, J. S, TOMICH, D. H, EYINK, K. G

“…The purpose of this research is to demonstrate the necessity of computer controlled valved group V effusion cell sources in the growth of indium gallium…”
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Comparison of GaAs grown on standard Si (511) and compliant SOI (511) by Seaford, M. L., Tomich, D. H., Eyink, K. G., Grazulis, L., Mahalingham, K., Yang, Z., Wang, W. I.

“…Gallium arsenide (GaAs) films were grown by molecular beam epitaxy (MBE) on a (511) silicon substrate and a compliant (511) silicon-on-insulator (SOI)…”
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Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment by Szmulowicz, F., Ehret, J., Mahalingam, K., Hegde, S., Solomon, J., Tomich, D.H., Landis, G., Brown, G.J., Oogarah, T., Liu, H.C.

“…Bound-to-continuum normal-incidence absorption in p-type GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) is strongest when the second light-hole (LH2)…”
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Comparison of InGaSb/InAs superlattice structures grown by MBE on GaSb, GaAs, and compliant GaAs substrates by Tomich, D. H., Eyink, K. G., Grazulis, L., Brown, G. L., Szmulowicz, F., Mahalingam, K., Seaford, M. L., Kuo, C. H., Hwang, W. Y., Lin, C. H.

“…This paper contains the characterization results for InAs/InGaSb superlattices (SL) that were grown by MBE on standard GaAs, standard GaSb, and compliant GaAs…”
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Self-assembly of heterojunction quantum dots by Eyink, K. G., Tomich, D. H., Pitz, J. J., Grazulis, L., Mahalingam, K., Shank, J. M.

“…The fabrication of a self-assembled heterojunction quantum dot structure composed of multiple materials is reported. This structure consists of a composite dot…”
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Growth study of chemical beam epitaxy of GaNxP1-x using NH3 and tertiarybutylphosphine by LI, N. Y, WONG, W. S, TOMICH, D. H, DONG, H. K, SOLOMON, J. S, GRANT, J. T, TU, C. W

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Optimization of InAs/GaSb type-II superlattices for high performance of photodetectors by Haugan, H.J., Brown, G.J., Grazulis, L., Mahalingam, K., Tomich, D.H.

“…The optimum growth conditions and strain balancing processes have been studied using molecular beam epitaxy (MBE) grown 51 A ̊ InAs/ 40 A ̊ GaSb type-II…”
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Phenomenology of self-diffusion in star-branched polyisoprenes in solution by Von Meerwall, Ernst, Tomich, D. H, Hadjichristidis, N, Fetters, Lewis J

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Study of interfaces in GaInSb/InAs quantum wells by high-resolution X-ray diffraction and reciprocal space mapping by Tomich, D.H, Mitchel, W.C, Chow, P, Tu, C.W

“…The electrical and optical properties of advanced epitaxial structures, such as quantum wells and superlattices are strongly influenced by the quality of their…”
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Nondestructive evaluation of alternative substrate quality using glancing-incidence x-ray diffraction and Raman spectroscopy by Haugan, H. J., Cain, A. M., Haas, T. W., Eyink, K. G., Eiting, C. J., Tomich, D. H., Grazulis, L., Busbee, J. D.

“…Alternate substrate technology holds promise for the growth of high-quality lattice-mismatched epitaxial films. Unfortunately, the technology has been plagued…”
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Comparison of MBE grown InSb on CU substrates using different sacrificial layers by Seaford, M.L., Tomich, D.H., Eyink, K.G., Lampert, W.V., Ejeckam, F.E., Lo, Y.-H.

“…InSb epitaxial layers with approximately 15% lattice mismatched to GaAs were grown on a conventional GaAs substrate and compliant universal (CU) substrates…”
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Comparison of nanomachined III–V semiconductor substrates by Grazulis, L., Kelly, D. L., Walker, D. E., Tomich, D. H., Eyink, K. G., Lampert, W. V.

“…Emerging device applications demand surface features on the order of hundreds of angstroms. Nanolithography by machining with a diamond tip is proposed as a…”
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Mechanical lithography using a single point diamond machining by Goss, S. H., Grazulis, L., Tomich, D. H., Eyink, K. G., Walck, S. D., Haas, T. W., Thomas, D. R., Lampert, W. V.

“…A technique that produces submicron size features by machining GaAs wafers in air was studied. An apparatus was built which uses a sharp diamond tip to…”
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Subnanometer analysis of molecular beam epitaxy grown ternary arsenides by Seaford, M. L., Wu, W., Eyink, K. G., Tomich, D. H., Tucker, J. R., Eastman, L. F.

“…InGaAs/InAlAs modulation-doped field-effect transistors (MODFETs) grown by molecular beam epitaxy on InP have been characterized using Hall and cross-sectional…”
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Atomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs (111)B substrates by Tomich, D. H., Eyink, K. G., Seaford, M. L., Taferner, W. F., Tu, C. W., Lampert, W. V.

“…The growth of high quality layers on GaAs (111)B on-axis substrates has been found to be extremely difficult. Homoepitaxial growth in the (√19×√19)R23.4…”
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