Silicon dosimeters based on Floating Gate Sensor: design, implementation and characterization

A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit...

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Bibliographic Details
Published in:	2020 IEEE 20th Mediterranean Electrotechnical Conference ( MELECON) pp. 388 - 392
Main Authors:	Gatti, U., Calligaro, C., Parlato, A., Tomarchio, E. A. G., Pikhay, E., Roizin, Y.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2020
Subjects:	Analog-to-Digital converter current-to-voltage interfaces Dosimeter edgeless transistors (ELT) Floating Gate MOS Logic gates Multiplexing Power demand Radiation effects Radiation hardening (electronics) radiation hardening by design (RHBD) Silicon Temperature distribution total ionizing dose (TID)
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Summary:	A rad-hard monolithic dosimeter has been implemented and characterized in a standard 180 nm CMOS technology. The radiation sensor (C-sensor) is based on a Floating Gate (FG) MOS discharge principle. The output current is processed by a current-to-voltage (I/V) interface and then converted by a 5-bit flash ADC. The dosimeter is re-usable (FG can be recharged) and can detect a dose up to 1krad (Si) with a resolution of 30rad (Si) typical over temperature 0 to 85°C range. The ADC allows easy further signal processing for calibration and averaging, etc. The power consumption of C-sensor plus I/V interface is < 2mW from a 5 V power supply. The overall layout area is less than 0.25mm 2 . The Radiation-Hardened-By-Design (RHBD) approach guarantees that the absorbed dose does not degrade the circuitry.
ISSN:	2158-8481
DOI:	10.1109/MELECON48756.2020.9140654