Search Results - "Tolstoy, G."

Challenges Regarding Parallel Connection of SiC JFETs by Peftitsis, D., Baburske, R., Rabkowski, J., Lutz, J., Tolstoy, G., Nee, H.

“…State-of-the-art silicon carbide switches have current ratings that are not sufficiently high to be used in high-power converters. It is, therefore, necessary…”
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High-Power Modular Multilevel Converters With SiC JFETs by Peftitsis, D., Tolstoy, G., Antonopoulos, A., Rabkowski, J., Jang-Kwon Lim, Bakowski, M., Ängquist, Lennart, Nee, H.

“…This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical…”
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Low-Loss High-Performance Base-Drive Unit for SiC BJTs by Rabkowski, J., Tolstoy, G., Peftitsis, D., Nee, H.

“…Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power consumption and short-switching times are desired. A…”
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A Discretized Proportional Base Driver for Silicon Carbide Bipolar Junction Transistors by Tolstoy, Georg, Peftitsis, Dimosthenis, Rabkowski, Jacek, Palmer, Patrick R., Nee, Hans-Peter

“…Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is…”
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Dual control used in series-loaded resonant converter with SiC devices by Tolstoy, G., Ranstad, P., Colmenares, J., Giezendanner, F., Nee, H.-P

“…This paper presents the performance of silicon carbide (SiC) switches in a series-loaded resonant (SLR) converter with dual control (DuC). It is shown that the…”
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Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors by Peftitsis, D., Rabkowski, J., Tolstoy, G., Nee, H.

“…An experimental performance comparison between SiC JFET and SiC BJT switches which are used as the main switch for a 2 kW dc/dc converter is presented. In…”
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