Search Results - "Toledo, N. G."

Characterization of the junction leakage of Ti-capped Ni-silicided junctions by Toledo, N.G., Lee, P.S., Pey, K.L.

“…The junction leakage characteristics of Ti-capped nickel-silicided diodes are presented. Ti-capped Ni-silicided devices rapid thermal annealed (RTA) at 400 °C…”
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Characterization and comparison of single and stacked MIMC in copper interconnect Process for mixed-mode and RF applications by Ng, C.H., Ho, C.S., Toledo, N.G., Chu, S.-F.

“…This letter presents the dc and RF study and comparison on four manufacturable single- (one and dual additional masks) and stacked- (intraand multiple inter-)…”
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Isolated Microsporum Canis from a canine nasal cavity bearer of intranasal foreign body and Transmissible Venereal Tumor - Radiografic imaging and rinoscopy - case report by Rolemberg, D.S., Toledo, G.N., Reis, S.D.S., Moreira, P.P., Moraes, P.C.

“…ABSTRACT Rhinopathies diagnosis in small animals is challenging, especially regarding their etiology. Imaging exams are very valuable tools for diagnostic…”
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Wafer-Bonded p-n Heterojunction of GaAs and Chemomechanically Polished N-Polar GaN by Jeonghee Kim, Toledo, N. G., Lal, S., Jing Lu, Buehl, T. E., Mishra, U. K.

“…This letter reports wafer-bonded p-n heterojunction diodes, which consist of GaAs and chemomechanically polished N-polar GaN. The measured I - V and C - V show…”
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Optimization of the p-GaN window layer for InGaN/GaN solar cells by Neufeld, C J, Chen, Z, Cruz, S C, Toledo, N G, DenBaars, S P, Mishra, U K

“…In this work we report on the optimization of the p-GaN window layer for InGaN/GaN solar cells. We studied the effect of p-GaN thickness and growth temperature…”
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Integrated non-III-nitride/III-nitride tandem solar cell by Toledo, N. G., Cruz, S. C., Neufeld, C. J., Lang, J. R., Scarpulla, M. A., Buehl, T., Gossard, A. C., Denbaars, S. P., Speck, J. S., Mishra, U. K.

“…III-nitrides have recently been demonstrated as potential photovoltaic device material particularly in the high-energy portion of the solar spectrum. The large…”
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Characterization of the junction leakage of Ti-capped Ni-silicided junctions by TOLEDO, N. G, LEE, P. S, PEY, K. L

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Enabling wireless communications with state-of-the-art RF CMOS and SiGe BiCMOS technologies by Chu, S.F., Chew, K.W., Verma, P.R., Ng, C.H., Cheng, C.H., Toledo, N.G., Yoo, Y.K., Loh, W.B., Leong, K.C., Zhang, S.Q., Oon, B.G., Poh, Y.W., Zhou, T., Khu, K.K., Lim, S.F.

“…The choice of technology for today's mixed-signal/RF system-on-chip (SOC) designs has been driven by the performance enhancements and cost advantage derived…”
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Design and practical implementation of a 2.4 GHz lumped element elliptic bandpass filter by Ching, G.S.

“…This paper describes the design and practical implementation of an S-band (2.4 GHz) elliptic bandpass filter using lumped elements. Issues regarding the choice…”
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An alternative implementation of a low-cost narrowband double-balanced microwave mixer by Lorenzo, M.A.D., Toledo, N.G., Sison, L.T.

“…This paper describes the design and implementation of a low-cost narrowband 1.2 GHz mixer using a double-balanced configuration. An alternative mixer…”
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