Search Results - "Tolbanov, Oleg"

Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes by Prudaev, Ilya, Tolbanov, Oleg, Khludkov, Stanislav

“…The results of experimental investigation of forward current‐voltage characteristics of InGaN/GaN multiple quantum well light‐emitting diodes are presented. A…”
Get full text

Characterization of Chromium Compensated GaAs Sensors with the Charge-Integrating JUNGFRAU Readout Chip by Means of a Highly Collimated Pencil Beam by Greiffenberg, Dominic, Andrä, Marie, Barten, Rebecca, Bergamaschi, Anna, Brückner, Martin, Busca, Paolo, Chiriotti, Sabina, Chsherbakov, Ivan, Dinapoli, Roberto, Fajardo, Pablo, Fröjdh, Erik, Hasanaj, Shqipe, Kozlowski, Pawel, Lopez Cuenca, Carlos, Lozinskaya, Anastassiya, Meyer, Markus, Mezza, Davide, Mozzanica, Aldo, Redford, Sophie, Ruat, Marie, Ruder, Christian, Schmitt, Bernd, Thattil, Dhanya, Tinti, Gemma, Tolbanov, Oleg, Tyazhev, Anton, Vetter, Seraphin, Zarubin, Andrei, Zhang, Jiaguo

“…Chromium compensated GaAs or GaAs:Cr sensors provided by the Tomsk State University (Russia) were characterized using the low noise, charge integrating readout…”
Get full text

Optical Pump–Terahertz Probe Study of HR GaAs:Cr and SI GaAs:EL2 Structures with Long Charge Carrier Lifetimes by Kolesnikova, Irina A., Kobtsev, Daniil A., Redkin, Ruslan A., Voevodin, Vladimir I., Tyazhev, Anton V., Tolbanov, Oleg P., Sarkisov, Yury S., Sarkisov, Sergey Yu, Atuchin, Victor V.

“…The time dynamics of nonequilibrium charge carrier relaxation processes in SI GaAs:EL2 (semi-insulating gallium arsenide compensated with EL2 centers) and HR…”
Get full text

The Mechanism of Superfast Switching of Avalanche -Diodes Based on GaAs Doped With Cr and Fe by Prudaev, Ilya A., Oleinik, Vladimir L., Smirnova, Tatyana E., Kopyev, Viktor V., Verkholetov, Maksim G., Balzovsky, Evgeny V., Tolbanov, Oleg P.

“…The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on <inline-formula> <tex-math…”
Get full text

Performance of a Medipix3RX Spectroscopic Pixel Detector With a High Resistivity Gallium Arsenide Sensor by Hamann, Elias, Koenig, Thomas, Zuber, Marcus, Cecilia, Angelica, Tyazhev, Anton, Tolbanov, Oleg, Procz, Simon, Fauler, Alex, Baumbach, Tilo, Fiederle, Michael

“…High resistivity gallium arsenide is considered a suitable sensor material for spectroscopic X-ray imaging detectors. These sensors typically have thicknesses…”
Get full text

Photoluminescence and terahertz generation in InGaN/GaN multiple quantum well light-emitting diode heterostructures under laser excitation by Prudaev, Ilya, Sarkisov, Sergey, Tolbanov, Oleg, Kosobutsky, Alexey

“…In this paper the results of experiments on terahertz generation from nitride light‐emitting diode heterostructures under two‐photon excitation by femtosecond…”
Get full text

Characterisation of a GaAs(Cr) Medipix2 hybrid pixel detector by Tlustos, Lukas, Shelkov, Georgy, Tolbanov, Oleg P.

“…A semi-insulating GaAs(Cr) sensor of 300 μm thickness with a bulk resistivity of 10 9 Ω cm and no guard ring structures has been bump bonded to a Medipix2…”
Get full text

Spectral X-ray Detectors Based on Multi-Element Chromium Compensated Gallium Arsenide Sensors and Application Specific Integrated Circuits: : Keynote Paper Devoted 75th Anniversary of the Transistor by Shaimerdenova, Leila, Vinnik, Aleksander, Skakunov, Maksim, Tolbanov, Oleg, Tyazhev, Anton, Zarubin, Andrey

“…The paper presents results of R&D in the field of X-ray spectral imaging detectors based on chromium-compensated gallium arsenide pixel sensors…”
Get full text

Optical Pump - THz Probe Study of SI-GaAs:Cr with Long Charge Carrier Lifetime by Kolesnikova, Irina, Kobtsev, Daniil, Redkin, Ruslan, Sarkisov, Sergey, Tolbanov, Oleg, Tyazhev, Anton

“…SI-GaAs:Cr is a material for ionizing radiation detectors [1], in which, on the contrary to materials for THz devices [2], a long charge carrier lifetime, at…”
Get full text

X-ray based methods for 3D characterization of charge collection and homogeneity of sensors with the use of Timepix chip by Zemlicka, Jan, Jakubek, J., Jakubek, M., Vykydal, Z., Chelkov, G. A., Kruchonok, V. G., Elkin, V. G., Fiederle, M., Fauler, A., Tolbanov, O. P., Tyazhev, A. V., Visser, J.

“…Timepix is a universal readout chip for pixel detectors which can be connected to various semiconductor sensors. The device has a 256×256 matrix of square…”
Get full text

Single-wall carbon nanotubes oriented by gas flow at synthesis by aerosol CVD method as terahertz polarizers by Sarkisov, Sergey Yu, Kosobutsky, Alexey V., Shandakov, Sergey D., Sarkisov, Yury S., Tolbanov, Oleg P., Dunaevsky, Grigory E.

“…Single-wall carbon nanotubes were synthesized by aerosol CVD method. Simplified technique for obtaining oriented carbon nanotubes was used. The technique is…”
Get full text

Terahertz emission from InGaN/GaN multiple quantum well light-emitting diode heterostructures under two-photon excitation by Sarkisov, Sergey Yu, Prudaev, Ilya A., Kosobutsky, Alexey V., Tolbanov, Oleg P., Dunaevsky, Grigory E.

“…Series of experiments on terahertz generation from InGaN/GaN light-emitting diode heterostructures at one- and two-photon excitation by femtosecond laser…”
Get full text

THz waveguide with a spit ring resonators layer by Nazarov, Maxim M., Shkurinov, Alexander P., Sarkisov, Sergey Yu, Zarubin, Andrey V., Tyazhev, Anton V., Tolbanov, Oleg P., Dunaevsky, Grigory E.

“…We use subwavelength metal rigs to control THz transmission through a planar dielectric waveguide. In this case magnetic field has maximal projection on the…”
Get full text

GaAs:Cr X-ray pixel detectors by Zarubin, A., Mokeev, D., Novikov, V., Tolbanov, O., Tyazhev, A.

“…Results of investigation of quantum count mode gallium arsenide pixel detectors are demonstrated. It was shown that at room temperature energy resolution of…”
Get full text

Terahertz generation in GaSe0.71S0.29 and GaSe crystals via eee- and eoo-type optical rectification by Nazarov, M. M., Sarkisov, S. Y., Shkurinov, A. P., Tolbanov, O. P.

“…Using experimental and model refractive indices of GaSe and GaSe 0.71 S 0.29 in terahertz range, phase-matching angles for eoo- and eee-type optical…”
Get full text

The research of characteristics of multichannel GaAs detectors by Nam, I. F., Ryabkov, S. A., Tolbanov, O. P., Tyazhev, A. V.

“…In this paper the results of multichannel GaAs detectors testing in integral mode are presented. It is shown that for x-ray quanta at the energy range 40-75…”
Get full text

Efficient terahertz generation in GaSe via eee-interaction type by Nazarov, M. M., Sarkisov, S. Yu, Shkurinov, A. P., Tolbanov, O. P.

“…Using the measured and modeled dispersion properties of GaSe an efficient terahertz generation via optical rectification of femtosecond laser pulses in the…”
Get full text