Search Results - "Tolbanov, O."

Electronic Properties of Highly Compensated Semiconductors: The HR-GaAs:Cr Material by Tolbanov, O. P.

“…It is found out that the HR-GaAs:Cr material is formed when the conductivity of n -GaAs is compensated by N Cr chromium atoms, resulting in highly localized…”
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Chromium compensated gallium arsenide detectors for X-ray and γ-ray spectroscopic imaging by Veale, M.C., Bell, S.J., Duarte, D.D., French, M.J., Schneider, A., Seller, P., Wilson, M.D., Lozinskaya, A.D., Novikov, V.A., Tolbanov, O.P., Tyazhev, A., Zarubin, A.N.

“…Semi-insulating GaAs material of 500μm thickness grown using the Liquid Encapsulated Czochralski (LEC) method has been compensated with chromium to produce…”
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Selective Sensors of Nitrogen Dioxide Based on Thin Tungsten Oxide Films under Optical Irradiation by Almaev, A. V., Yakovlev, N. N., Chernikov, E. V., Tolbanov, O. P.

“…It is shown that NO 2 present in air, beginning at a concentration of 1 ppm, can be selectively detected by sensors based on Au/WO 3 :Au thin films activated…”
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Macroscopic and Mesoscopic Inhomogeneities of Electrophysical, Optical, and Photoelectric Characteristics in Chromium Compensated Gallium Arsenide Wafers by Vinnik, A. E., Zarubin, A. N., Chsherbakov, I. D., Skakunov, M. S., Tolbanov, O. P., Tyazhev, A. V, Shaimerdenova, L. K., Shemeryankina, A. V., Kosmachev, P. V., Panin, S. V.

“…The relationship between the resistivity, the photoconductivity and the short-wave infrared (SWIR) transmission of HR GaAs:Cr wafers and the properties of…”
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Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities by Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V.

“…The review of literature on AlN doping with nonmagnetic impurities (elements of groups I, II, III, and IV of both subgroups and rare earth elements), providing…”
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Multi-Spectral X-Ray Detectors for Nondestructive Testing of 3D Printed Polymer Composites by Tyazhev, A. V., Vinnik, A. E., Zarubin, A. N., Kosmachev, P. V., Novikov, V. A., Skakunov, M. S., Tolbanov, O. P., Shaimerdenova, L. K., Shemeryankina, A. V., Shcherbakov, I. D.

“…The paper presents parameters of two multi-spectral X-ray detectors based on high resistivity chromiumcompensated gallium arsenide, which convert X-ray signal…”
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Methods of Charge-Carrier Mobility Measurements in Structures Based on High-Resistivity Gallium Arsenide with Deep Centers by Chsherbakov, I. D., Shaimerdenova, L. K., Shemeryankina, A. V., Skakunov, M. S., Tolbanov, O. P., Tyazhev, A. V., Zarubin, A. N., Trofimov, M. S.

“…One of the most important parameters determining the efficiency of X-ray sensors is the μ∙τ product, where μ is the charge-carrier mobility and τ is the…”
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Formation of Dislocations in the Process of Impurity Diffusion in GaAs by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P., Ivonin, I. V.

“…A study of the formation of dislocations in the process of impurity diffusion in GaAs has been carried out. The formation of dislocations in GaAs diffusion…”
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Aluminum Nitride Doped with Transition Metal Group Atoms as a Material for Spintronics by Khludkov, S. S., Prudaev, I. A., Root, L. O., Tolbanov, O. P., Ivonin, I. V.

“…The overview of scientific literature on the electric and magnetic properties of AlN doped with transition metal group atoms is presented. The review is based…”
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Conductivity of Ga2O3–GaAs Heterojunctions by Kalygina, V. M., Remizova, I. L., Tolbanov, O. P.

“…The effect of annealing in argon at temperatures of T an = 700–900°C on the I – V characteristics of metal–Ga 2 O 3 –GaAs structures is investigated. Samples…”
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Charge Carrier Transport and Deep Levels Recharge in Avalanche S-Diodes Based on GaAs by Prudaev, I. A., Verkholetov, M. G., Koroleva, A. D., Tolbanov, O. P.

“…Carrier transport and deep-level recharging in semiconductor avalanche S-diode structures have been investigated. Gallium-arsenide n + –π–ν– n structures with…”
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Photoelectrical characteristics of TiO2-N-SI heterostructures by Kalygina, V. M., Egorova, I. S., Prudaev, I. A., Tolbanov, O. P., Atuchin, V. V.

“…ABSTRACT The TiO2 thin films have been deposited onto Si epi‐layer‐covered Si substrates by magnetron sputtering of a TiO2 target. The influence of thermal…”
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The Measurement of Charge Carrier Lifetime in SIGaAs: Cr and EL2-GaAs by Pump-Probe Terahertz Spectroscopy by Kolesnikova, I. I., Kobtsev, D. A., Redkin, R. A., Sarkisov, S. Yu, Tolbanov, O. P., Tyazhev, A. V.

“…In the present work, the temporal dynamics of relaxation of a nonequilibrium concentration of charge carriers in SI-GaAs:Cr and EL2-GaAs semiconductor crystals…”
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Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

“…The data on the electrical, structural, and magnetic properties of the iron doped gallium arsenide obtained by various methods are systematized. The conditions…”
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Luminescence of Ga2O3 Crystals Excited with a Runaway Electron Beam by Burachenko, A. G., Beloplotov, D. V., Prudaev, I. A., Sorokin, D. A., Tarasenko, V. F., Tolbanov, O. P.

“…The spectra and amplitude–time characteristics of the radiation of studied Sn and Fe-doped Ga 2 O 3 crystals excited with a runaway electron beam and an…”
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Fabrication and Investigation of Indium Nitride Possessing Ferromagnetic Properties by Khludkov, S. S., Prudaev, I. A., Tolbanov, O. P.

“…An overview of the scientific literature since 2000 on InN doping with impurities giving it ferromagnetic properties and on the magnetic properties of InN is…”
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Relation between the structural and phase transformations in titanium-oxide films and the electrical and photoelectric properties of TiO2–Si structures by Kalygina, V. M., Egorova, I. M., Novikov, V. A., Prudaev, I. A., Tolbanov, O. P.

“…The effect of annealing in argon and oxygen plasma on the I–V characteristics and photoresponse of TiO 2 –Si structures is investigated. The titanium oxide…”
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Properties of Gallium Oxide Films Obtained by HF-Magnetron Sputtering by Lygdenova, T. Z., Kalygina, V. M., Novikov, V. A., Prudaev, I. A., Tolbanov, O. P., Tyazhev, A. V.

“…The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the…”
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Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide by Kalygina, V. M., Petrova, Yu. S., Prudaev, I. A., Tolbanov, O. P.

“…We present the results of studying the capacitance-voltage and conductance-voltage characteristics of the GaxOy / GaAs -based metal – oxide – semiconductor…”
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A Solid-State Sub-Nanosecond Microwave Switch by Avdochenko, B. I., Prudaev, I. A., Tolbanov, O. P., Chumerin, P. Yu, Yurchenko, V. I.

“…A problem is discussed of the microwave generator power switching with the use of high-speed subnanosecond avalanche diodes. A scheme of the measurement setup,…”
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