Search Results - "Toifl, Thomas"
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1
Wide bandwidth room-temperature THz imaging array based on antenna-coupled MOSFET bolometer
Published in Sensors and actuators. A. Physical. (15-08-2014)“…We report on the design, fabrication and measurements of a new THz sensor concept based on an antenna-coupled MOSFET bolometer for room-temperature passive THz…”
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2
A 3.1 mW 8b 1.2 GS/s Single-Channel Asynchronous SAR ADC With Alternate Comparators for Enhanced Speed in 32 nm Digital SOI CMOS
Published in IEEE journal of solid-state circuits (01-12-2013)“…An 8b 1.2 GS/s single-channel Successive Approximation Register (SAR) ADC is implemented in 32 nm CMOS, achieving 39.3 dB SNDR and a Figure-of-Merit (FoM) of…”
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Journal Article Conference Proceeding -
3
A 24-72-GS/s 8-b Time-Interleaved SAR ADC With 2.0-3.3-pJ/Conversion and >30 dB SNDR at Nyquist in 14-nm CMOS FinFET
Published in IEEE journal of solid-state circuits (01-12-2018)“…A 24-72-GS/s 8-b time-interleaved analog-to-digital converter (ADC) is presented which exceeds 39-dB SNDR at low input frequency and 30-dB SNDR at Nyquist…”
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4
A 161-mW 56-Gb/s ADC-Based Discrete Multitone Wireline Receiver Data-Path in 14-nm FinFET
Published in IEEE journal of solid-state circuits (01-01-2020)“…This article introduces a wireline receiver (RX) data-path employing discrete multi-tone (DMT) modulation for communicating over electrical links. The DMT RX…”
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5
Integrated circuits for particle physics experiments
Published in IEEE journal of solid-state circuits (01-12-2000)“…High energy particle physics experiments investigate the nature of matter through the identification of subatomic particles produced in collisions of protons,…”
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6
Session 8 Overview: Ultra-High-Speed Wireline
Published in 2021 IEEE International Solid-State Circuits Conference (ISSCC) (13-02-2021)“…As data center and telecommunication infrastructure bandwidth requirements continue to increase, networking products with 112Gb/s electrical and optical…”
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Conference Proceeding -
7
Implementation of Low-Power 6-8 b 30-90 GS/s Time-Interleaved ADCs With Optimized Input Bandwidth in 32 nm CMOS
Published in IEEE journal of solid-state circuits (01-03-2016)“…A model for voltage-based time-interleaved sampling is introduced with two implementations of highly interleaved analog-to-digital converters (ADCs) for 100…”
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8
A 12-bit 300-MS/s SAR ADC With Inverter-Based Preamplifier and Common-Mode-Regulation DAC in 14-nm CMOS FinFET
Published in IEEE journal of solid-state circuits (01-11-2018)“…A single-channel 12-bit SAR ADC achieving 250-340 MS/s and consuming 4.8-8.0 mW from 0.75 to 0.9 V is presented. At 300 MS/s, the ADC exhibits 61.6-dB peak…”
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9
An Eight-Lane 7-Gb/s/pin Source Synchronous Single-Ended RX With Equalization and Far-End Crosstalk Cancellation for Backplane Channels
Published in IEEE journal of solid-state circuits (01-03-2018)“…This paper presents a versatile crosstalk cancellation scheme for single-ended multi-lane backplane links. System-level investigations show that a scheme,…”
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10
A 10 W On-Chip Switched Capacitor Voltage Regulator With Feedforward Regulation Capability for Granular Microprocessor Power Delivery
Published in IEEE transactions on power electronics (01-01-2017)“…Granular power delivery with per-core regulation for microprocessor power delivery has the potential to significantly improve the energy efficiency of future…”
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11
A 64-Gb/s 1.4-pJ/b NRZ Optical Receiver Data-Path in 14-nm CMOS FinFET
Published in IEEE journal of solid-state circuits (01-12-2017)“…A 64-Gb/s high-sensitivity non-return to zero receiver (RX) data-path is demonstrated in the 14-nm-bulk FinFET CMOS technology. To achieve high sensitivity,…”
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12
Modeling and Pareto Optimization of On-Chip Switched Capacitor Converters
Published in IEEE transactions on power electronics (01-01-2017)“…The operation and efficiency of on-chip switched-capacitor (SC) converters are highly affected by the parasitic bottom plate capacitor present in on-chip…”
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13
A 112Gb/S 2.6pJ/b 8-Tap FFE PAM-4 SST TX in 14nm CMOS
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…The ongoing demand for higher data rates in wireline and optical communications has led to emerging standards in the 100Gb/s+ regime [1]. Although these…”
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Conference Proceeding -
14
A 16 Gb/s 3.7 mW/Gb/s 8-Tap DFE Receiver and Baud-Rate CDR With 31 kppm Tracking Bandwidth
Published in IEEE journal of solid-state circuits (01-11-2014)“…A 16 Gb/s I/O link receiver fabricated in 22 nm CMOS SOI technology is presented. Attenuation and ISI of transmitted NRZ data across PCB channels are equalized…”
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15
Design Techniques for High-Speed Multi-Level Viterbi Detectors and Trellis-Coded-Modulation Decoders
Published in IEEE transactions on circuits and systems. I, Regular papers (01-10-2018)“…The implementation of a 25.6-Gb/s four-level pulse-amplitude-modulation (4-PAM) reduced-state sliding-block Viterbi detector (VD) is presented. The power…”
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16
A 60-Gb/s 1.9-pJ/bit NRZ Optical Receiver With Low-Latency Digital CDR in 14-nm CMOS FinFET
Published in IEEE journal of solid-state circuits (01-04-2018)“…This paper presents an analysis on the loop dynamics of the digital clock and data recovery (CDR) circuits and the design details of a non-return to zero…”
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17
A 28-Gb/s 4-Tap FFE/15-Tap DFE Serial Link Transceiver in 32-nm SOI CMOS Technology
Published in IEEE journal of solid-state circuits (01-12-2012)“…This paper presents a 28-Gb/s transceiver in 32-nm SOI CMOS technology for chip-to-chip communications over high-loss electrical channels such as backplanes…”
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Journal Article Conference Proceeding -
18
A 4.5 mW/Gb/s 6.4 Gb/s 22+1-Lane Source Synchronous Receiver Core With Optional Cleanup PLL in 65 nm CMOS
Published in IEEE journal of solid-state circuits (01-12-2010)“…This paper describes the design of a product-level low-power source-synchronous link receiver macro for data rates of 3.2-6.4 Gb/s. The receiver macro consists…”
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Journal Article Conference Proceeding -
19
F5: Enabling New System Architectures with 2.5D, 3D, and Chiplets
Published in 2021 IEEE International Solid-State Circuits Conference (ISSCC) (13-02-2021)“…Summary form only given, as follows. The end of transistor scaling drives innovative 2.5D, 3D and chiplet technologies to further extend Moore's law. Recent…”
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Conference Proceeding -
20
A 24-to-72GS/s 8b time-interleaved SAR ADC with 2.0-to-3.3pJ/conversion and >30dB SNDR at nyquist in 14nm CMOS FinFET
Published in 2018 IEEE International Solid - State Circuits Conference - (ISSCC) (01-02-2018)“…Optical communication standards, such as ITU OTU-4, OIF 112G and 100/400Gb/s Ethernet, require ADCs with more than 50GS/s and at least 5 ENOB to enable complex…”
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Conference Proceeding