Design of a resonant-cavity-enhanced p-i-n GaN/Al/sub x/Ga/sub 1-x/N ultraviolet photodetector

Summary form only given The Al/sub x/Ga/sub 1-x/N material system is well suited as a photodetector material in the ultra-violet (UV) spectrum (from 200 to 365 nm). Previously, we have achieved high quantum efficiencies and low dark currents on GaN-based metal-semiconductor-metal photodetectors and...

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Bibliographic Details
Published in:	Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) pp. 23 - 24
Main Authors:	Li, T., Carrano, J.C., Eiting, C.J., Grudowski, P.A., Lambert, D.J.H., Kwon, H.K., Dupuis, R.R., Campbell, J.C., Tober, R.T.
Format:	Conference Proceeding
Language:	English
Published:	IEEE 1999
Subjects:	Absorption Annealing Australia Distributed Bragg reflectors Gallium nitride Photodetectors PIN photodiodes Protons Reflectivity Resonance
Online Access:	Get full text
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Summary:	Summary form only given The Al/sub x/Ga/sub 1-x/N material system is well suited as a photodetector material in the ultra-violet (UV) spectrum (from 200 to 365 nm). Previously, we have achieved high quantum efficiencies and low dark currents on GaN-based metal-semiconductor-metal photodetectors and p-i-n photodetectors. To attain wavelength selectivity, high quantum efficiency, and high speed, we have applied the resonant cavity concept to Al/sub x/Ga/sub 1-x/N based photodetectors.
ISBN:	9781557525956 1557525951
DOI:	10.1109/CLEO.1999.833825