Deep Diffusion Doping of Macroporous Silicon

We studied the diffusion of boron and phosphorus impurities into the walls of macroporous silicon with a regular pattern of deep cylindrical pores. The layers obtained had a depth of ∼150–250 μm, were quasiuniformly doped, and were characterized by a flat diffusion front. Their electric parameters w...

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Bibliographic Details
Published in:	Physica status solidi. A, Applied research Vol. 182; no. 1; pp. 145 - 150
Main Authors:	Astrova, E.V., Voronkov, V.B., Grekhov, I.V., Nashchekin, A.V., Tkachencko, A.G.
Format:	Journal Article
Language:	English
Published:	Berlin WILEY-VCH Verlag Berlin GmbH 01-11-2000 WILEY‐VCH Verlag Berlin GmbH
Online Access:	Get full text
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Summary:	We studied the diffusion of boron and phosphorus impurities into the walls of macroporous silicon with a regular pattern of deep cylindrical pores. The layers obtained had a depth of ∼150–250 μm, were quasiuniformly doped, and were characterized by a flat diffusion front. Their electric parameters were very similar to those of doped nonporous crystal. It was demonstrated that deep diffusion of phosphorus may be used to produce n–n+ structures and this technique is compatible with the conventional processes of silicon device fabrication.
Bibliography:	ArticleID:PSSA145 ark:/67375/WNG-D9RQ9QWF-Z istex:36343BC284DE2A9F9CCAC08654A5B2035A1F9D6D
ISSN:	0031-8965 1521-396X
DOI:	10.1002/1521-396X(200011)182:1<145::AID-PSSA145>3.0.CO;2-#