Cu2ZnSnS4 thin films by simple replacement reaction route for solar photovoltaic application

A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6nm. The...

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Bibliographic Details
Published in:	Thin solid films Vol. 551; pp. 42 - 45
Main Authors:	Tiwari, Devendra, Chaudhuri, Tapas K., Ray, Arabinda, Tiwari, Krishan Dutt
Format:	Journal Article
Language:	English
Published:	Amsterdam Elsevier B.V 31-01-2014 Elsevier
Subjects:	Applied sciences Condensed matter: structure, mechanical and thermal properties Copper zinc tin sulfide Cross-disciplinary physics: materials science; rheology CZT Density Energy Exact sciences and technology Glass Materials science Methods of deposition of films and coatings; film growth and epitaxy Natural energy Open circuit voltage Other semiconductors Photovoltaic cells Photovoltaic conversion Physics Replacement reaction Roughness Solar cells Solar cells. Photoelectrochemical cells Solar energy Solution deposition Specific materials Structure and morphology; thickness Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film solar cells Thin film structure and morphology Thin films Solution deposition Replacement reaction Copper zinc tin sulfide Thin film solar cells Atomic force microscopy Electrical conductivity Roughness Soda-lime glasses Thin film Photovoltaic cell Deposition process Zinc sulfide Energy gap Near infrared spectrum Copper Tin Zinc Sulfides Mixed Tin oxide Raman spectrometry Infrared spectrum Current density Cell structure Thin film device Electronic properties Hole mobility Quantum yield Cadmium sulfide X ray diffraction AND circuit Solar cell II-VI semiconductors Graphite Ultraviolet visible spectrum
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Summary:	A process for deposition of Cu2ZnSnS4 (CZTS) films using replacement of Zn2+ in ZnS is demonstrated. X-ray diffraction pattern and Raman spectroscopy confirm the formation of pure CZTS. Atomic force microscopy shows the films to be homogeneous and compact with root mean squared roughness of 6nm. The direct band gap of CZTS films as elucidated by UV–Vis-NIR spectroscopy is 1.45eV. The CZTS films exhibit p-type conduction with electrical conductivity of 4.6S/cm. The hole concentration and hole mobility is determined to be 3.6×1017cm−3 and 1.4cm2V−1s−1 respectively. Solar cells with structure: graphite/CZTS/CdS/ZnO/SnO2:In/Soda lime glass are also fabricated, gave photo-conversion efficiency of 6.17% with open circuit voltage and short circuit current density of 521mV and 19.13mA/cm2, respectively and a high fill factor of 0.62. The external quantum efficiency of the solar cell lies above 60% in the visible region. •Pure kesterite Cu2ZnSnS4 thin films deposited by replacement reaction route•Energy band gap of films is 1.45eV.•p-type films with conductivity of 4.6S/cm & mobility of 1.4cm2S−1V−1•Fabrication of Graphite/Cu2ZnSnS4/CdS/ZnO/SnO2:In/Glass solar cell•Solar cell delivered efficiency of 6.17% with high fill factor of 0.62
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2013.11.095