Search Results - "Tischler, J. G"

The role of losses in determining hyperbolic material figures of merit by Jackson, E. M., Tischler, J. G., Ratchford, D. C., Ellis, C. T.

“…Uniaxial materials have achieved new prominence in photonics because they can have hyperbolic spectral regions with metallic (ε<0) and dielectric (ε>0)…”
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The effect and nature of N-H complexes in the control of the dominant photoluminescence transitions in UV-hydrogenated GaInNAs by Brown, C. R, Estes, N. J, Whiteside, V. R, Wang, B, Hossain, K, Golding, T. D, Leroux, M, Al Khalfioui, M, Tischler, J. G, Ellis, C. T, Glaser, E. R, Sellers, I. R

“…Due to its 1 eV band gap and GaAs-matched lattice constant, GaInNAs has long been considered for use in four-junction multi-junction solar cells; but, material…”
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Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dots by Bracker, A S, Stinaff, E A, Gammon, D, Ware, M E, Tischler, J G, Shabaev, A, Efros, Al L, Park, D, Gershoni, D, Korenev, V L, Merkulov, I A

“…We present a comprehensive examination of optical pumping of spins in individual GaAs quantum dots as we change the net charge from positive to neutral to…”
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Shallow-Etch Mesa Isolation of Graded-Bandgap “W”-Structured Type II Superlattice Photodiodes by Aifer, E. H., Warner, J. H., Canedy, C. L., Vurgaftman, I., Jackson, E. M., Tischler, J. G., Meyer, J. R., Powell, S. P., Olver, K., Tennant, W. E.

“…Shallow-etch mesa isolation (SEMI) of graded-bandgap “W”-structured type II superlattice (GGW) infrared photodiodes provides a powerful means for reducing…”
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Semi-insulating GaN substrates for high-frequency device fabrication by Freitas, J.A., Gowda, M., Tischler, J.G., Kim, J.-H., Liu, L., Hanser, D.

“…Thick c-plane unintentional doped and iron-doped GaN substrates were grown by hydride vapor phase epitaxial technique on sapphire substrates. The morphology…”
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Bulk properties of InN films determined by experiments and theory by Kumar, M., Baldissera, G., Persson, C., David, D.G.F., da Silva, M.V.S., Freitas, J.A., Tischler, J.G., Chubaci, J.F.D., Matsuoka, M., Ferreira da Silva, A.

“…Bulk properties of InN are determined by combining experimental and theoretical studies. In this work, we produced high quality InN film deposited on GaN…”
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Controlling dark current in type-II superlattice photodiodes by Canedy, C.L., Aifer, E.H., Warner, J.H., Vurgaftman, I., Jackson, E.M., Tischler, J.G., Powell, S.P., Olver, K., Meyer, J.R., Tennant, W.E.

“…Limiting the defect-mediated dark currents in type-II superlattice (T2SL) IR photodiodes remains the key challenge to focal plane arrays (FPAs) based on this…”
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Seeded growth of GaN single crystals from solution at near atmospheric pressure by Feigelson, B.N., Frazier, R.M., Gowda, M., Freitas, J.A., Fatemi, M., Mastro, M.A., Tischler, J.G.

“…A multi-component solvent has been developed to dissolve solid gallium nitride (GaN) source material and grow single GaN crystals from the solution on GaN…”
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Anharmonic decay of phonons in strain-free wurtzite AlN by Tischler, J. G., Freitas, J. A.

“…We present Raman scattering measurements on high-quality freestanding AlN single crystals. Polarization studies provide clear identification of all allowed…”
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Properties of Fe-doped semi-insulating GaN substrates for high-frequency device fabrication by Freitas, J.A., Tischler, J.G., Kim, J.-H., Kumagai, Y., Koukitu, A.

“…Thick freestanding GaN films were grown by hydride vapor-phase epitaxial method on both pattern-masked and unmasked GaAs substrates. Both approaches resulted…”
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In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions by Harris, R.D., Imaizumi, M., Walters, R.J., Lorentzen, J.R., Messenger, S.R., Tischler, J.G., Ohshima, T., Sato, S., Sharps, P.R., Fatemi, N.S.

“…The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell…”
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Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes by Vurgaftman, I., Aifer, E. H., Canedy, C. L., Tischler, J. G., Meyer, J. R., Warner, J. H., Jackson, E. M., Hildebrandt, G., Sullivan, G. J.

“…A new W-structured type-II superlattice photodiode design, with graded band gap in the depletion region, is shown to strongly suppress dark currents due to…”
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Controlling interfacial disorder and strain of W-structured type-II superlattices using As2 flux by KIM, J. C, TISCHLER, J. G, CANEDY, C. L, AIFER, E. H, VURGAFTMAN, I, MEYER, J. R, WHITMAN, L. J

“…We have investigated how the photoluminescence varies with strain induced by interfacial disorder in W-structured type-II superlattices (WSLs). WSLs with…”
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Towards high efficiency multi-junction solar cells grown on InP Substrates by Gonzalez, M., Lumb, M. P., Yakes, M. K., Bailey, C. G., Tischler, J. G., Hoheisel, R., Abell, J., Vurgaftman, I., Meyer, J., Maximenko, S., Jenkins, P. P., Molina, S. I., Delgado-Gonzalez, F. J., Bahena, D., Ponce, A., Adams, J. G. J., Fuhrer, M., Ekins-Daukes, N., Walters, R. J.

“…Progress toward the development of multi-junction solar cells grown on InP substrates is presented. In this material system, the optimal bandgaps for solar…”
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Structural and optical properties of thick freestanding GaN templates by Freitas, J.A., Braga, G.C.B., Moore, W.J., Tischler, J.G., Culbertson, J.C., Fatemi, M., Park, S.S., Lee, S.K., Park, Y.

“…Structural and optical properties of thick (larger than 160 μm) freestanding hydride vapor phase epitaxy GaN templates have been investigated. AFM measurements…”
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Dynamics of photoexcited carriers and spins in InAsP ternary alloys by Meeker, M. A., Magill, B. A., Merritt, T. R., Bhowmick, M., McCutcheon, K., Khodaparast, G. A., Tischler, J. G., McGill, S., Choi, S. G., Palmstrøm, C. J.

“…The recent rapid progress in the field of spintronics involves extensive measurements of carrier and spin relaxation dynamics in III-V semiconductors. In…”
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Polarized electrons, trions, and nuclei in charged quantum dots by Bracker, A. S., Tischler, J. G., Korenev, V. L., Gammon, D.

“…We have investigated spin polarization in GaAs quantum dots. Excitons and trions are polarized directly by optical excitation and studied through polarization…”
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Optical probing of low-pressure solution grown GaN crystal properties by Freitas, J.A., Tischler, J.G., Garces, N.Y., Feigelson, B.N.

“…The structural and optical properties of self-nucleated crystals grown by a near atmospheric pressure solution growth method are presented. High-resolution…”
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Optically detected resonance spectroscopy of interface fluctuation quantum dots by Meining, C.J., Whiteside, V.R., Petrou, A., McCombe, B.D., Dzyubenko, A.B., Tischler, J.G., Bracker, A.S., Gammon, D.

“…We have performed optically detected resonance (ODR) spectroscopy on modulation-doped GaAs/AlGaAs quantum wells of different widths in which lateral…”
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GaN single crystals of different habit grown from solution at near atmospheric pressure by Feigelson, B.N., Hite, J.K., Garces, N.Y., Freitas, J.A., Tischler, J.G., Klein, P.B.

“…Near atmospheric pressure solution growth is one of the many developing methods for growing bulk GaN from solution. Apart from other approaches, this method…”
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