Search Results - "Tirado, J.M."

Trapping Effects in the Transient Response of AlGaN/GaN HEMT Devices by Tirado, J.M., Sanchez-Rojas, J.L., Izpura, J.I.

“…In this paper, the transient analysis of an AlGaN/GaN high-electron mobility transistor (HEMT) device is presented. Drain-current dispersion effects are…”
Get full text

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With [Formula Omitted] Passivation by Chung, J.W, Saadat, O.I, Tirado, J.M, Gao, Xiang, Guo, S, Palacios, T

Get full text

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With \hbox\hbox Passivation by Chung, J.W., Saadat, O.I., Tirado, J.M., Xiang Gao, Guo, S., Palacios, T.

“…We studied submicrometer (L G = 0.15-0.25 ¿m) gate-recessed InAlN/AlN/GaN high-electron mobility transistors (HEMTs) on SiC substrates with 25-nm Al 2 O 3…”
Get full text

Structural and physicochemical characterization of avocado seed starches modified by high-temperature acid hydrolysis by Dios-Avila, N. de, Tirado-Gallegos, J.M., Estrada-Virgen, M.O., Rios-Velasco, C., Luna-Esquivel, G., Zamudio-Flores, P.B., Isiordia-Aquino, N., Cambero-Campos, O.J.

“…ABSTRACT The modification of starches by physical or chemical methods is useful to enhance the physicochemical properties of native starches. Avocado seed…”
Get full text

Origin of the Increasing Access Resistance in AlGaN/GaN HEMTs by Tirado, J.M., Mieville, F., Xu Zhao, Jinwook Chung, Sanchez-Rojas, J.L., Palacios, T.

“…We have studied the origin of the increasing source access resistance in GaN HEMTs through a combination of theoretical modeling, simulations and experimental…”
Get full text

Numerical 2D simulation of surface states effects in AlGaN/GaN HEMT and GaN MESFET devices by Tirado, J.M., Sanchez de Rojas, J.L., Izpura, J.I.

“…The consequences of surface states in field-effect devices based on GaN are analyzed in this work. DC and transient effects on drain current response are…”
Get full text