Search Results - "Ting Gang Zhu"

Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz by Hampson, M.D., Shyh-Chiang Shen, Schwindt, R.S., Price, R.K., Chowdhury, U., Wong, M.M., Ting Gang Zhu, Dongwon Yoo, Dupuis, R.D., Milton Feng

“…Current metal-organic chemical vapor deposition-grown AlGaN-GaN heterojunction field-effect transistor devices suffer from threading dislocations and surface…”
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Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition by Shelton, B.S., Lambert, D.J.H., Jian Jang Huang, Wong, M.M., Chowdhury, U., Ting Gang Zhu, Kwon, H.K., Liliental-Weber, Z., Benarama, M., Feng, M., Dupuis, R.D.

“…The selective area growth (SAG) and properties of AlGaN/GaN heterojunction bipolar transistors (HBTs) grown by low-pressure metalorganic chemical vapor…”
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Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers by Shelton, B.S., Ting Gang Zhu, Lambert, D.J.H., Dupuis, R.D.

“…The use of GaN for the fabrication of Schottky and p-i-n rectifiers presents an opportunity to take advantage of the high-voltage and high-power handling…”
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AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition by Ting Gang Zhu, Denyszyn, J.C., Chowdhury, U., Wong, M.M., Dupuis, R.D.

“…We report the study of the electrical and optical characteristics of AlGaN-GaN quantum-well (QW) ultraviolet light-emitting diodes grown on SiC by…”
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AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition by Zhu, Ting Gang, Chowdhury, Uttiya, Denyszyn, Jonathan C., Wong, Michael M., Dupuis, Russell D.

“…We report the electrical and optical characteristics of an AlGaN/AlGaN quantumwell ultraviolet (UV) light-emitting diode (LED) grown on sapphire by…”
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Improved Performance of AlGaN/GaN Heterojunction Field-Effect Transistors Using Delta Doping and a Binary Barrier by Wong, Michael M., Chowdhury, Uttiya, Sicault, Delphine, Becher, David T., Denyszyn, Jonathan C., Choi, Jin Ho, Zhu, Ting Gang, Feng, Milton, Dupuis, Russell D.

“…The improved performance of AlGaN/GaN heterojunction field-effect transistors using a delta-doping approach along with an AlN binary barrier is reported…”
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Novel 600 V GaN Schottky diode delivering SiC performance at Si prices by Cohen, I., Ting Gang Zhu, Linlin Liu, Murphy, M., Pophristic, M., Pabisz, M., Gottfried, M., Shelton, B.S., Peres, B., Ceruzzi, A., Stall, R.A.

“…GaN Schottky diodes offer the same performance benefits as SiC-based devices at a significantly lower cost. A 600 V GaN-based Schottky diode was substituted in…”
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GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition by Zhu, Ting Gang, Chowdhury, Uttiya, Wong, Michael M, Denyszyn, Jonathan C, Dupuis, Russell D

“…In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire…”
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GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition : III-V Nitrides and Silicon Carbide by TING GANG ZHU, CHOWDHURY, Uttiya, WONG, Michael M, DENYSZYN, Jonathan C, DUPUIS, Russell D

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