Search Results - "Tiginyanu, I. M"

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  1. 1

    Epitaxial Electrodeposition of ZnO Nanowire Arrays on p-GaN for Efficient UV-Light-Emitting Diode Fabrication by Lupan, O, Pauporté, T, Viana, B, Tiginyanu, I. M, Ursaki, V. V, Cortès, R

    Published in ACS applied materials & interfaces (28-07-2010)
    “…The electrochemical growth of ZnO nanowire arrays on p-type GaN (0001) single crystalline thin films supported on sapphire is demonstrated for the first time…”
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    Journal Article
  2. 2

    Structural and elastic properties of defect chalcopyrite HgGa2S4 under high pressure by Gomis, O., Santamaría-Pérez, D., Vilaplana, R., Luna, R., Sans, J.A., Manjón, F.J., Errandonea, D., Pérez-González, E., Rodríguez-Hernández, P., Muñoz, A., Tiginyanu, I.M., Ursaki, V.V.

    Published in Journal of alloys and compounds (15-01-2014)
    “…•Single crystals of HgGa2S4 with defect-chalcopyrite (DC) structure were synthesized.•High-pressure X-ray diffraction in DC-HgGa2S4 was performed.•Equation of…”
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    Journal Article
  3. 3

    Comparative study of hydrothermal treatment and thermal annealing effects on the properties of electrodeposited micro-columnar ZnO thin films by Lupan, O., Pauporté, T., Tiginyanu, I.M., Ursaki, V.V., Şontea, V., Ono, L.K., Cuenya, B. Roldan, Chow, L.

    Published in Thin solid films (01-09-2011)
    “…We report a comparison of the role played by different sample treatments, namely, a low-temperature hydrothermal treatment by hot H 2O vapor in an autoclave…”
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    Journal Article
  4. 4

    Polarized Retroreflection from Nanoporous III–V Semiconductors by Prislopski, S. Ya, Gaponenko, S. V., Monaico, E., Sergentu, V. V., Tiginyanu, I. M.

    Published in Semiconductors (Woodbury, N.Y.) (01-12-2018)
    “…“Retroreflected light with strong linear polarization coinciding with that of the incident beams is detected from strongly absorbing nanoporous III–V…”
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  5. 5

    Fabrication and characterization of an individual ZnO microwire-based UV photodetector by Chai, G.Y., Chow, L., Lupan, O., Rusu, E., Stratan, G.I., Heinrich, H., Ursaki, V.V., Tiginyanu, I.M.

    Published in Solid state sciences (01-05-2011)
    “…In this paper, a single ZnO microwire-based photodetector for the monitoring of ultraviolet (UV) radiation is described. Single crystal ZnO microwires were…”
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    Journal Article
  6. 6

    Synthesis and characterization of Cu-doped ZnO one-dimensional structures for miniaturized sensor applications with faster response by Chow, L., Lupan, O., Chai, G., Khallaf, H., Ono, L.K., Roldan Cuenya, B., Tiginyanu, I.M., Ursaki, V.V., Sontea, V., Schulte, A.

    Published in Sensors and actuators. A. Physical. (15-01-2013)
    “…Detection of chemicals and biological species is an important issue to human health and safety. In this paper, we report the hydrothermal synthesis at 95°C of…”
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    Journal Article
  7. 7

    Porous III-V compound semiconductors: formation, properties, and comparison to silicon by Föll, H., Carstensen, J., Langa, S., Christophersen, M., Tiginyanu, I. M.

    Published in Physica status solidi. A, Applied research (01-05-2003)
    “…Pore formation in n‐type III–V semiconductors will be discussed and compared to pore formation in silicon. While by now many different kinds of pores were…”
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    Journal Article Conference Proceeding
  8. 8

    Self-organized growth of single crystals of nanopores by Langa, S., Tiginyanu, I. M., Carstensen, J., Christophersen, M., Föll, H.

    Published in Applied physics letters (13-01-2003)
    “…Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of…”
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    Journal Article
  9. 9

    Photoluminescence of chemical bath deposited ZnO:Al films treated by rapid thermal annealing by Shishiyanu, S.T., Lupan, O.I., Monaico, E.V., Ursaki, V.V., Shishiyanu, T.S., Tiginyanu, I.M.

    Published in Thin solid films (22-09-2005)
    “…Aluminum-doped zinc oxide (ZnO:Al) films fabricated by chemical bath deposition are characterized using scanning electron microscopy and photoluminescence (PL)…”
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    Journal Article
  10. 10

    Formation of metal wire arrays via electrodeposition in pores of Si, Ge and III-V semiconductors by Fang, C., Foca, E., Sirbu, L., Carstensen, J., Föll, H., Tiginyanu, I. M.

    “…Deep straight macropores in n‐type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of…”
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    Journal Article Conference Proceeding
  11. 11

    Single crystalline 2D porous arrays obtained by self organization in n-InP by Langa, S., Christophersen, M., Carstensen, J., Tiginyanu, I. M., Föll, H.

    Published in Physica status solidi. A, Applied research (01-05-2003)
    “…Self organization is a rather common phenomenon during pore formation in III–V semiconductors. The so called tetrahedron‐like pores, the domains of…”
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    Journal Article Conference Proceeding
  12. 12

    Porous III-V compounds as nonlinear optical materials by Tiginyanu, I. M., Kravetsky, I. V., Langa, S., Marowsky, G., Monecke, J., Föll, H.

    Published in Physica status solidi. A, Applied research (01-05-2003)
    “…Electrochemical etching is shown to represent a unique approach for tailoring linear and nonlinear optical properties of III–V compounds. We demonstrate that…”
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    Journal Article Conference Proceeding
  13. 13

    Observation of crossing pores in anodically etched n -GaAs by Langa, S., Carstensen, J., Christophersen, M., Föll, H., Tiginyanu, I. M.

    Published in Applied physics letters (19-02-2001)
    “…Pores in GaAs in the micrometer range and oriented in 〈111〉 directions have been observed during the anodization of GaAs in aqueous HCl electrolytes. A direct…”
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    Journal Article
  14. 14

    Impact of size upon lasing in ZnO microtetrapods by Zalamai, V. V., Ursaki, V. V., Tiginyanu, I. M., Burlacu, A., Rusu, E. V., Klingshirn, C., Fallert, J., Sartor, J., Kalt, H.

    Published in Applied physics. B, Lasers and optics (01-04-2010)
    “…High optical quality, well end leg faceted ZnO microtetrapods with leg length between 1 and 12 μm have been grown by carbothermal chemical vapor deposition…”
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  15. 15

    Surface-charge lithography for GaN microstructuring based on photoelectrochemical etching techniques by Tiginyanu, I. M., Popa, V., Volciuc, O.

    Published in Applied physics letters (25-04-2005)
    “…We show that host defects introduced at the surface of GaN epilayers by mechanical means (e.g., using needles, microscribers), or 2-keV-argon ion beam are…”
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    Journal Article
  16. 16

    Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching by Tiginyanu, I. M., Ursaki, V. V., Zalamai, V. V., Langa, S., Hubbard, S., Pavlidis, D., Föll, H.

    Published in Applied physics letters (25-08-2003)
    “…GaN nanocolumns with transverse dimensions of about 50 nm were obtained by illumination-assisted anodic etching of epilayers grown by metalorganic chemical…”
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    Journal Article
  17. 17

    Structural and optical high-pressure study of spinel-type MnIn2S4 by Manjón, F. J., Segura, A., Amboage, M., Pellicer-Porres, J., Sánchez-Royo, J. F., Itié, J. P., Flank, A. M., Lagarde, P., Polian, A., Ursaki, V.V., Tiginyanu, I. M.

    Published in Physica Status Solidi (b) (01-01-2007)
    “…We report a combined study of the structural and electronic properties of the spinel‐type semiconductor MnIn2S4 under high pressures by means of X‐ray…”
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    Journal Article Conference Proceeding
  18. 18

    Exciton polariton spectra and carrier effective masses in ZnO single crystals by Syrbu, N.N., Tiginyanu, I.M., Zalamai, V.V., Ursaki, V.V., Rusu, E.V.

    Published in Physica. B, Condensed matter (30-11-2004)
    “…Photoreflectivity and photoluminescence spectra in the region of exciton resonance were measured in ZnO single crystals. A, B, and C exciton binding energies…”
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    Cathodoluminescence characterization of rare earth doped composite materials based on porous GaP by Sánchez, B, Méndez, B, Piqueras, J, Sirbu, L, Tiginyanu, I. M, Ursaki, V. V

    Published in Journal of materials science (2008)
    “…Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal…”
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