Search Results - "Tien-Yen Wang"
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A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric
Published in IEEE electron device letters (01-11-2016)“…Multilevel cell (MLC) phase change memory (PCM) offers many potential advantages in scalability, bit-alterability, non-volatility, and high program speed…”
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Journal Article -
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A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100\times for Storage Class Memory Applications
Published in IEEE journal of solid-state circuits (01-01-2017)“…For multilevel cell (MLC) phase change memory (PCM), resistance drift (R-drift) phenomenon causes cell resistance to increase with time, even at room…”
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Journal Article -
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The impact of melting during reset operation on the reliability of phase change memory
Published in 2012 IEEE International Reliability Physics Symposium (IRPS) (01-04-2012)“…Operation impact on endurance performance in GST-based phase change memory is investigated from small arrays to large test chips. SET operation induced…”
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Conference Proceeding
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Excellent resistance variability control of WOx ReRAM by a smart writing algorithm
Published in 2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) (01-04-2016)“…TMO ReRAMs, being built on defect states, are intrinsically subject to variability. In this work, cell to cell variability is studied by applying write shots…”
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Conference Proceeding -
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A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory
Published in 2011 3rd IEEE International Memory Workshop (IMW) (01-05-2011)“…This paper presents a novel reconfigurable sensing scheme with the flexibility to change reading precision of analog resistance levels for MLC PCM. A 2Mcell…”
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Conference Proceeding -
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7.3 A resistance-drift compensation scheme to reduce MLC PCM raw BER by over 100× for storage-class memory applications
Published in 2016 IEEE International Solid-State Circuits Conference (ISSCC) (01-01-2016)“…The large performance gap between traditional storage and the rest of the memory hierarchy calls for a storage class memory (SCM) to fill the need. Phase…”
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Conference Proceeding