Search Results - "Tien-Kun Lin"
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Effect of Varied Undoped GaN Thickness on ESD and Optical Properties of GaN-Based LEDs
Published in IEEE photonics technology letters (15-05-2012)“…The optical property and electrostatic discharge (ESD) endurance of GaN-based light-emitting diodes (LEDs) with varied undoped GaN thickness are studied and…”
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Journal Article -
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Effect of p-GaN layer grown with H2 carrier gas on wall-plug efficiency of high-power LEDs
Published in Solid-state electronics (01-06-2017)“…•The p-H2 layer can effectively improve the WPE performance of GaN-based LEDs for high power application.•GaN crystal growth in H2 ambient, better quality and…”
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Journal Article -
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Effect of p-GaN layer grown with H 2 carrier gas on wall-plug efficiency of high-power LEDs
Published in Solid-state electronics (01-06-2017)Get full text
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Leakage Current Analysis of Nitride Based Optoelectronics by Emission Microscopy Inspection
Published in 2007 Asia-Pacific Microwave Conference (01-12-2007)“…GaN MSM photodetectors (PDs) and p-i-n photodetectors (PDs) with E-gun SiO2 passivation and plasma enhanced chemical vapor deposited (PECVD) SiO2 passivation…”
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Conference Proceeding -
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High Temperature Performance and Low Frequency Noise Characteristics of AlGaN/GaN/AlGaN Double Heterostructure Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors with Photochemical Vapor Deposition SiO 2 Layer
Published in Japanese Journal of Applied Physics (01-04-2005)“…High quality SiO 2 films were successfully deposited onto AlGaN using photochemical vapor deposition (photo-CVD). The interface state density, D it , of…”
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Journal Article