Search Results - "Tiedemann, Andreas T"

High‑k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors by Wirths, Stephan, Stange, Daniela, Pampillón, Maria-Angela, Tiedemann, Andreas T, Mussler, Gregor, Fox, Alfred, Breuer, Uwe, Baert, Bruno, San Andrés, Enrique, Nguyen, Ngoc D, Hartmann, Jean-Michel, Ikonic, Zoran, Mantl, Siegfried, Buca, Dan

“…We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on…”
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Line Tunneling Dominating Charge Transport in SiGe/Si Heterostructure TFETs by Blaeser, Sebastian, Glass, Stefan, Schulte-Braucks, Christian, Narimani, Keyvan, von den Driesch, Nils, Wirths, Stephan, Tiedemann, Andreas T., Trellenkamp, Stefan, Buca, Dan, Mantl, Siegfried, Qing-Tai Zhao

“…This paper provides an experimental proof that both the ON-current ION and the subthreshold swing SS of Si(Ge)-based tunneling FETs (TFETs) drastically benefit…”
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Isothermal Heteroepitaxy of Ge 1- x Sn x Structures for Electronic and Photonic Applications by Concepción, Omar, Søgaard, Nicolaj B, Bae, Jin-Hee, Yamamoto, Yuji, Tiedemann, Andreas T, Ikonic, Zoran, Capellini, Giovanni, Zhao, Qing-Tai, Grützmacher, Detlev, Buca, Dan

“…Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In…”
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Isothermal Heteroepitaxy of Ge1–x Sn x Structures for Electronic and Photonic Applications by Concepción, Omar, Søgaard, Nicolaj B., Bae, Jin-Hee, Yamamoto, Yuji, Tiedemann, Andreas T., Ikonic, Zoran, Capellini, Giovanni, Zhao, Qing-Tai, Grützmacher, Detlev, Buca, Dan

“…Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In…”
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Experimental I – V(T) and C – V Analysis of Si Planar p-TFETs on Ultrathin Body by Chang Liu, Qinghua Han, Glass, Stefan, Gia Vinh Luong, Narimani, Keyvan, Tiedemann, Andreas T., Fox, Alfred, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

“…We present the experimental analysis of planar Si p-tunnel FETs (TFETs) fabricated on ultrathin body Silicon on Insulator (SOI) substrates by an optimized…”
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Experimental Investigation of – Characteristics of Si Tunnel FETs by Chang Liu, Glass, Stefan, Gia Vinh Luong, Narimani, Keyvan, Qinghua Han, Tiedemann, Andreas T., Fox, Alfred, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

“…This letter presents an experimental capacitance-voltage C-V analysis for Si p-tunnel FETs (TFETs) fabricated on ultrathin body at various frequencies and…”
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Isothermal Heteroepitaxy of Ge1–xSnx Structures for Electronic and Photonic Applications by Concepción, Omar, Søgaard, Nicolaj B., Bae, Jin-Hee, Yamamoto, Yuji, Tiedemann, Andreas T., Ikonic, Zoran, Capellini, Giovanni, Zhao, Qing-Tai, Grützmacher, Detlev, Buca, Dan

“…Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In…”
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Si n-TFETs on ultra thin body with suppressed ambipolarity by Chang Liu, Qinghua Han, Luong, Gia Vinh, Narimani, Keyvan, Glass, Stefan, Tiedemann, Andreas T., Trellenkamp, Stefan, Wenjie Yu, Xi Wang, Mantl, Siegfried, Qing-Tai Zhao

“…This paper presents an ultra thin body Si n-TFET which exploits a multi-finger gate layout and steep junction formed by dopant implantation into silicide (IIS)…”
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Epitaxy and photoluminescence studies of high quality GeSn heterostructures with Sn concentrations up to 13 at. by Wirths, Stephan, Geiger, Richard, Ikonic, Zoran, Tiedemann, Andreas T., Mussler, Gregor, Hartmann, Jean-Michel, Mantl, Siegfried, Sigg, Hans, Grutzmacher, Detlev, Buca, Dan

“…We present photoluminescence measurements on highly compressively strained and partially relaxed GeSn alloys with Sn contents up to 13 at.%. Calculations…”
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