Search Results - "Tiberio, RC"

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    Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization by Guillorn, Michael A., Carr, Dustin W., Tiberio, Richard C., Greenbaum, Elias, Simpson, Michael L.

    “…We report a versatile process for the fabrication of dissimilar metal electrodes with a minimum interelectrode distance of less than 6 nm using electron beam…”
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    Journal Article
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    Propagation loss measurements in semiconductor microcavity ring and disk resonators by Rafizadeh, D., Zhang, J.P., Tiberio, R.C., Ho, S.T.

    Published in Journal of lightwave technology (01-07-1998)
    “…We report the measurement of cavity propagation losses in nearly single-mode semiconductor waveguide-coupled ring and disk microcavity optical resonators…”
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    Journal Article
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    Self-assembled monolayer electron beam resist on GaAs by TIBERIO, R. C, CRAIGHEAD, H. G, LERCEL, M, LAU, T, SHEEN, C. W, ALLARA, D. L

    Published in Applied physics letters (01-02-1993)
    “…We present results on electron beam exposure of a self-assembled monolayer film as a self-developing positive resist on GaAs. A 1.5 nm thick monolayer of…”
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    Journal Article
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    Comparison of infrared frequency selective surfaces fabricated by direct-write electron-beam and bilayer nanoimprint lithographies by Puscasu, Irina, Boreman, G., Tiberio, R. C., Spencer, D., Krchnavek, R. R.

    “…We report on the fabrication of crossed-dipole resonant filters by direct-write electron-beam and nanoimprint lithographies. Such structures have been used as…”
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    Conference Proceeding Journal Article
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    Electron-beam lithography for the magnetic recording industry: fabrication of nanoscale (10 nm) thin-film read heads by Driskill-Smith, A.A.G., Katine, J.A., Druist, D.P., Lee, K.Y., Tiberio, R.C., Chiu, A.

    Published in Microelectronic engineering (01-06-2004)
    “…The magnetic recording industry is evaluating electron-beam lithography for magnetoresistive thin-film head production due to the rapid convergence of critical…”
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    Journal Article
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    CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode by Martin, R.D., Forouhar, S., Keo, S., Lang, R.J., Hunsperger, R.G., Tiberio, R.C., Chapman, P.F.

    Published in IEEE photonics technology letters (01-03-1995)
    “…Single-mode distributed feedback (DFB) laser diodes typically require a two-step epitaxial growth or use of a corrugated substrate. We demonstrate…”
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    Journal Article
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    Fabrication of thin-film metal nanobridges by RALLS, K. S, BUHRMAN, R. A, TIBERIO, R. C

    Published in Applied physics letters (04-12-1989)
    “…Thin-film fabrication techniques for forming three-dimensional ‘‘point contacts’’ are presented. As-fabricated nanobridges can be modified using…”
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    Journal Article
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    Nanofabrication of 1-D photonic bandgap structures along a photonic wire by Zhang, J.P., Chu, D.Y., Wu, S.L., Bi, W.G., Tiberio, R.C., Joseph, R.M., Taflove, A., Tu, C.W., Ho, S.T.

    Published in IEEE photonics technology letters (01-04-1996)
    “…A strongly-guided one-dimensional (1-D) waveguide called a photonic wire has high spontaneous emission coupling efficiency, enabling one to realize…”
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    Journal Article
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    Process optimization of a chemically amplified negative resist for electron beam exposure and mask making applications by Ainley, E., Nordquist, K., Resnick, D.J., Carr, D.W., Tiberio, R.C.

    Published in Microelectronic engineering (01-05-1999)
    “…NEB-22, a chemically amplified negative tone resist has been formulated by Sumitomo for e-beam lithography direct write and mask making applications. The…”
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    Journal Article Conference Proceeding
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    Directional light output from photonic-wire microcavity semiconductor lasers by Zhang, J.P., Chu, D.Y., Wu, S.L., Bi, W.G., Tiberio, R.C., Tu, C.W., Ho, S.T.

    Published in IEEE photonics technology letters (01-08-1996)
    “…We have obtained directional light output from a recently realized InGaAsP photonic-wire microcavity ring lasers. The output was achieved by fabricating a…”
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    Journal Article
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    DC and microwave characteristics of sub-0.1- mu m gate-length planar-doped pseudomorphic HEMTs by Chao, P.-C., Shur, M.S., Tiberio, R.C., Duh, K.H.G., Smith, P.M., Ballingall, J.M., Ho, P., Jabra, A.

    Published in IEEE transactions on electron devices (01-03-1989)
    “…Analytical modeling of these very-short-channel HEMTs (high-electron-mobility transistors) using the charge-control model is given. The calculations performed…”
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    Journal Article
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    Broadband Bragg filter in microfabricated AlGaAs waveguides by Espindola, R. P., Udo, M. K., Chu, D. Y., Wu, S. L., Ho, S. T., Tiberio, R. C., Chapman, P. F., Hou, H. Q., Chang, T. Y.

    Published in Applied physics letters (08-01-1996)
    “…We report on the fabrication and characterization of broadband Bragg filters in microfabricated AlGaAs waveguides. Electron-beam lithography and chemically…”
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    Journal Article
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    Gate-length dependence of the speed of SSI circuits using submicrometer selectively doped heterostructure transistor technology by Shah, N.J., Shin-Shem Pei, Tu, C.W., Tiberio, R.C.

    Published in IEEE transactions on electron devices (01-05-1986)
    “…Frequency dividers and ring oscillators have been fabricated with submicrometer gates on selectively doped AIGaAs/GaAs heterostructure wafers. A divide-by-two…”
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    Journal Article
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    Coherence and Structural Design of Free-Standing Gratings for Atom-Wave Optics by ROOKS, M. J, TIBERIO, R. C, CARTER, J. M, SMITH, H. I, CHAPMAN, M, HAMMOND, T, SMITH, E, LENEF, A, RUBENSTEIN, R, PRITCHARD, D, ADAMS, S, FERRERA, J

    Published in Japanese Journal of Applied Physics (01-12-1995)
    “…Improvements in electron-beam writing techniques have allowed us to compensate for electron-beam system drift, making feasible the exposure of 800×800 µ m…”
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    Conference Proceeding Journal Article
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    0.1-μm gate-length pseudomorphic HEMT's by CHAO, P. C, TIBERIO, R. C, DUH, K.-H. G, SMITH, P. M, BALLINGALL, J. M, LESTER, L. F, LEE, B. R, JABRA, A, GIFFORD, G. G

    Published in IEEE electron device letters (1987)
    “…AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMT's) with a gate length of 0.1 mu m have been successfully fabricated. The HEMT's…”
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    Journal Article
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    Electron beam lithography with monolayers of alkylthiols and alkylsiloxanes by Lercel, M. J., Redinbo, G. F., Pardo, F. D., Rooks, M., Tiberio, R. C., Simpson, P., Craighead, H. G., Sheen, C. W., Parikh, A. N., Allara, D. L.

    “…Self‐assembled monolayers have been modified with focused electron beams of energy 1–50 keV and scanning tunneling microscopy (STM) based lithography with…”
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    Conference Proceeding