Search Results - "Tianli Duan"

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  1. 1

    Capacitance Hysteresis in the High-k/Metal Gate-Stack From Pulsed Measurement by TIANLI DUAN, SHENP ANG, Diing

    Published in IEEE transactions on electron devices (01-04-2013)
    “…An unusual hysteresis is observed while measuring the capacitance-voltage ( C - V ) curve of the high-k/metal gate-stack using a pulsed-voltage technique. The…”
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    Journal Article
  2. 2

    Overshoot Stress on Ultra-Thin HfO2 High- \kappa Layer and Its Impact on Lifetime Extraction by Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Yan, J., Chao Zhao, Huilong Zhu, HongYu Yu

    Published in IEEE electron device letters (01-12-2015)
    “…Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT~0.8 nm) high-κ layer is investigated, which reveals that overshoot…”
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    Journal Article
  3. 3

    Investigation of AlGaN/GaN HEMTs degradation with gate pulse stressing at cryogenic temperature by Iervolino, Elina

    Published in AIP advances (01-09-2017)
    “…Degradation on DC characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) after applying pulsed gate stress at cryogenic temperatures is…”
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    Journal Article
  4. 4

    A novel fabrication technique for three-dimensional concave nanolens arrays by Tianli Duan, Kang Xu, Zhihong Liu, Chenjie Gu, Jisheng Pan, Diing Shenp Ang, Rui Zhang, Yao Wang, Xuhang Ma

    Published in Journal of Materiomics (01-09-2020)
    “…A novel facile technique is proposed for fabricating three-dimensional (3D) concave nanolens arrays on a silicon substrate. The technique leverages an inherent…”
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    Journal Article
  5. 5

    Overshoot stress impact on HfO2 high-κ layer dynamic SILC by Guangxing Wan, Tianli Duan, Shuxiang Zhang, Lingli Jiang, Bo Tang, Chao Zhao, Huilong Zhu, HongYu Yu

    “…Overshoot stress (mimicking the actual IC operating condition) in dynamic stress induced leakage increase (D-SILC) on ultra-thin HfO 2 (EOT~0.8 nm) high-κ…”
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    Conference Proceeding
  6. 6

    Investigation on PECVD-deposited SiO2 underlayer in permalloy-based magnetoelectronic devices by Tian, Jinpeng, Wang, Baojie, Song, Qiuming, Duan, Tianli, Zhang, Xueying, Lv, Zhijian, Zhang, Zhixing, Chen, Yulong, Zhang, Wenwei, Jia, Yuan

    Published in Journal of alloys and compounds (15-07-2024)
    “…This study presents a comprehensive investigation into the dependence among processing conditions, surface properties of the PECVD-deposited SiO2 underlayer,…”
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    Journal Article
  7. 7

    Facile synthesis of noble metal decorated carbon nanostructure for SERS detection by Lai, Kui, Xu, Yinghao, Chen, Jiahui, Gu, Chenjie, Chen, Da, Jiang, Tao, Duan, Tianli, Zhou, Jun

    Published in Journal of Raman spectroscopy (01-01-2022)
    “…Surface enhanced Raman scattering (SERS) is a highly sensitive spectral analysis technique for ultra‐low trace molecule detection. Conventionally, noble metals…”
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    Journal Article
  8. 8

    A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application by Duan, Tianli, Gu, Chenjie, Ang, Diing Shenp, Xu, Kang, Liu, Zhihong

    Published in RSC advances (21-12-2020)
    “…A novel technique is demonstrated for the fabrication of silicon nanopillar arrays with high aspect ratios. Our technique leverages on an "antenna effect"…”
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    Journal Article
  9. 9

    Investigating the impact of the defect dynamic characteristics on the PBTI in the high-κ gate device by Liu, Xianqiang, Xu, Xiaodi, Gu, Chenjie, Gu, Renyuan, Wang, Weiwei, Liu, Wenjun, Duan, Tianli

    Published in Microelectronics and reliability (01-01-2018)
    “…Recent device reliability studies on the metal/high-κ device observed the inter-convertible characteristics of the electron trap levels between the shallow and…”
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    Journal Article
  10. 10

    Overshoot Stress on Ultra-Thin HfO2 High-[Formula Omitted] Layer and Its Impact on Lifetime Extraction by Wan, Guangxing, Duan, Tianli, Zhang, Shuxiang, Jiang, Lingli, Tang, Bo, Yan, J, Zhao, Chao, Zhu, Huilong, Yu, HongYu

    Published in IEEE electron device letters (01-12-2015)
    “…Overshoot stress (stimulating the actual IC operating condition) on an ultra-thin HfO2 (EOT[Formula Omitted] nm) high-[Formula Omitted] layer is investigated,…”
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    Journal Article