Search Results - "Tian-Li Wu"

Dynamic On-Resistance and Threshold Voltage Instability Evaluation Circuit for Power GaN HEMTs Devices by Kumar, Rustam, Wu, Tian-Li

“…The p-GaN gate-based gallium nitride (GaN) power devices are a promising technology for power electronics applications. However, these devices suffer from…”
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Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors by Tian-Li Wu, Marcon, Denis, Shuzhen You, Posthuma, Niels, Bakeroot, Benoit, Stoffels, Steve, Van Hove, Marleen, Groeseneken, Guido, Decoutere, Stefaan

“…In this letter, we studied the forward bias gate breakdown mechanism on enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistors. To the best…”
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Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs by Wu, Tian-Li, Kutub, Sayeem Bin

“…In this work, we demonstrate the use of a machine learning (ML)-based statistical approach to model and analyze the impact of the fabrication processes on the…”
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Threshold Voltage Instability Measurement Circuit for Power GaN HEMTs Devices by Kumar, Rustam, Samanta, Suvendu, Wu, Tian-Li

“…The p gallium nitride (GaN) gate-based GaN high-electron mobility transistors (HEMTs) devices are preferred to achieve normally- off operation in power…”
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Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs by Meneghini, Matteo, Rossetto, Isabella, Bisi, Davide, Ruzzarin, Maria, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Marcon, Denis, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter reports an in-depth study of the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility…”
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H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs by Kumar, Rustam, Sarkar, Arnab, Anand, Sandeep, Verma, Amit, Wu, Tian-Li

“…Gallium nitride high electron mobility transistors outperform Silicon devices due to their excellent physical properties. However, being an immature…”
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A 2.5-D Angularly Stable Frequency Selective Surface Using Via-Based Structure for 5G EMI Shielding by Li, Da, Li, Tian-Wu, Li, Er-Ping, Zhang, Yao-Jiang

“…A novel broadband bandpass frequency-selective surface (FSS) designed for fifth generation (5G) EMI shielding is proposed in this paper. This new design…”
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A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs by Modolo, Nicola, Tang, Shun-Wei, Jiang, Hong-Jia, De Santi, Carlo, Meneghini, Matteo, Wu, Tian-Li

“…In this article, a physics-based analytical model which considers the channel charge (<inline-formula> <tex-math notation="LaTeX">{\mathrm {Q}}_{{\mathrm…”
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Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures by Tian-Li Wu, Bakeroot, Benoit, Hu Liang, Posthuma, Niels, Shuzhen You, Ronchi, Nicolo, Stoffels, Steve, Marcon, Denis, Decoutere, Stefaan

“…In this letter, we analyzed the gate capacitance characteristics in p-GaN gate/AlGaN/GaN heterostructures by using a two-junction capacitor model. First, we…”
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Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH₃ Plasma and Microwave Annealing by Chen, Yi-Hsuan, Su, Chun-Jung, Yang, Ting-Hsin, Hu, Chenming, Wu, Tian-Li

“…This article reports that the enhanced forward gate bias time-dependent dielectric breakdown (TDDB) reliability and interface quality are achieved in 5-nm…”
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A Low-Profile Broadband Bandpass Frequency Selective Surface With Two Rapid Band Edges for 5G Near-Field Applications by Li, Da, Li, Tian-Wu, Hao, Ran, Chen, Hong-Sheng, Yin, Wen-Yan, Yu, Hui-Chun, Li, Er-Ping

“…A low-profile broadband bandpass frequency selective surface (FSS) with two rapid band edges is proposed in this paper for 5G near-field applications. The…”
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Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors by Singh, Shivendra Kumar, Chen, Bang-Ren, Huang, Zhen-Hong, Wu, Tian-Li, Chauhan, Yogesh Singh

“…Incorporating inhibition dynamics for the first time, in this work, we successfully model the trapping and detrapping kinetics under positive and negative bias…”
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Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress by Ruzzarin, Maria, Meneghini, Matteo, Rossetto, Isabella, Van Hove, Marleen, Stoffels, Steve, Tian-Li Wu, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…This letter demonstrates that GaN-based MIS-HEMTs submitted to stress with high-temperature, high drain bias, and constant source current (HTSC stress) may…”
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Effects of Annealing on Ferroelectric Hafnium-Zirconium-Oxide-Based Transistor Technology by Chen, Yi-Hsuan, Su, Chun-Jung, Hu, Chenming, Wu, Tian-Li

“…In this letter, we investigate annealing effects in ferroelectric HfZrO x dielectric in metal-insulator-metal devices and metal-oxide-semiconductor capacitors…”
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Toward Understanding Thickness Dependence on Dielectric Breakdown Mechanism Under Forward Gate Bias in 4H-SiC MOS Technologies by Hu, Jia-Wei, Huang, Po-Chien, Huang, Pin-Wei, Jiang, Jheng-Yi, Huang, Chih-Fang, Wu, Tian-Li

“…In this brief, the oxide characteristics and breakdown mechanism under forward gate bias in 4H-SiC MOS technologies are investigated. We found that the…”
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Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs by Marcon, Denis, Meneghesso, Gaudenzio, Tian-Li Wu, Stoffels, Steve, Meneghini, Matteo, Zanoni, Enrico, Decoutere, Stefaan

“…In this paper, we review and add additional data and understandings on our findings on the two most common failure modes of GaN-based HEMTs: 1) permanent gate…”
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A Novel Miniaturized Multiband Strong Coupled-FSS Structure Insensitive to Almost All Angles and All Polarizations by Li, Tian-Wu, Fan, Yu-Di, Gu, Yi-Jie, Zhou, Shi-Yun, Qin, Peng-Fei, Li, Da, Sha, Wei E. I., Li, Er-Ping

“…This article presents a novel miniaturized almost all-angle-insensitive strong coupled frequency-selective surface (SC-FSS) with all-polarization-insensitive…”
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Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate by Bisi, Davide, Meneghini, Matteo, Van Hove, Marleen, Marcon, Denis, Stoffels, Steve, Wu, Tian-Li, Decoutere, Stefaan, Meneghesso, Gaudenzio, Zanoni, Enrico

“…In this work we report on the three dominant trapping mechanisms affecting the dynamic performance of a double‐heterostructure GaN‐based MIS‐HEMT grown on…”
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ON-state Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs by Wu, Wei-Min, Chen, Shih-Hung, Shih, Chun-An, Parvais, Bertrand, Collaert, Nadine, Ker, Ming-Dou, Wu, Tian-Li, Groeseneken, Guido

“…Gallium nitride (GaN)-on-Si technologies for advanced RF applications have been raising the attentions in semiconductor industries, which accompany with RF…”
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Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs by Chen, Bang-Ren, Hsiao, Yu-Sheng, Lin, Wei-Cheng, Lee, Wen-Jay, Chen, Nan-Yow, Wu, Tian-Li

“…This study demonstrates a novel use of the U-Net convolutional neural network (CNN) for modeling pixel-based electrostatic potential distributions in GaN…”
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