Search Results - "Thuruthiyil, C."

Modeling local variation of low-frequency noise in MOSFETs via sum of lognormal random variables by Bo Yu, Xin Li, Yonemura, J., Zhiyuan Wu, Jung-Suk Goo, Thuruthiyil, C., Icel, A.

“…In this paper, we investigate the geometry dependence for the local variation of low-frequency noise in MOSFETs via the sum of lognormal random variables. A…”
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History-effect-conscious SPICE model extraction for PD-SOI technology by Goo, J.-S., An, J.X., Thuruthiyil, C., Ly, T., Chen, Q., Radwin, M., Zhi-Yuan Wu, Lee, M.S.L., Zamudio, L., Yonemura, J., Assad, F., Pelella, M.M., Icel, A.B.

“…This work presents explicit fitting guidelines for AC and DC characteristics, specifically focused on accurate modeling of the history effects in the PD-SOI…”
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SPICE parameter extraction and RO validation of a 65nm SOI technology by Goo, J.-S., Chen, Q., Pandey, A., Apanovich, Y., Ly, T., Wason, V., Subba, N., Thuruthiyil, C., Icel, A.B.

“…Accurate extraction of the SPICE model parameter is critical in the CMOS IC design. However, it faces difficult issues in state-of-the-art MOSFET technology…”
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Extraction of Self-Heating Free I-V Curves Including the Substrate Current of PD SOI MOSFETs by Qiang Chen, Zhi-Yuan Wu, Su, R.Y.K., Jung-Suk Goo, Thuruthiyil, C., Radwin, M., Subba, N., Suryagandh, S., Tran Ly, Wason, V., An, J.X., Icel, A.B.

“…A new methodology is proposed to extract self-heating free I-V curves, including the substrate current, of SOI MOSFETs based on triple-temperature, regular DC…”
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Impact of stress on various circuit characteristics in 65nm PDSOI technology by Suryagandh, S., Gupta, M., Zhi-Yuan Wu, Krishnan, S., Pelella, M., Jung-Suk Goo, Thuruthiyil, C., An, J.X., Chen, B.Q., Subba, N., Zamudio, L., Yonemura, J., Icel, A.B.

“…Logic performance is improved by creating more stress in the channel in advanced CMOS technologies. Impact of stress on different circuit blocks in a…”
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Impact of stress on various circuit characteristics in 65nm PDSOI technology by Suryagandh, S., Gupta, M., Zhi-Yuan Wu, Krishnan, S., Pelella, M., Jung-Suk Goo, Thuruthiyil, C., An, J.X., Chen, B.Q., Subba, N., Zamudio, L., Yonemura, J., Icel, A.B.

“…Logic performance is improved by creating more stress in the channel in advanced CMOS technologies. Impact of stress on different circuit blocks in a…”
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Off-state leakage current modeling in low-power/high-performance partially-depleted (PD) floating-body (FB) SOI MOSFETs by Qiang Chen, Jung-Suk Goo, Tran Ly, Chandrasekaran, K., Zhi-Yuan Wu, Thuruthiyil, C., Icel, A.B.

“…Off-state leakage current in a 65 nm partially depleted (PD) floating-body (FB) SOI technology is modeled and analyzed with emphasis on its drain-voltage…”
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Critical current (ICRIT) based SPICE model extraction for SRAM cell by Qiang Chen, Balasubramanian, S., Thuruthiyil, C., Gupta, M., Wason, V., Subba, N., Jung-Suk Goo, Chiney, P., Krishnan, S., Icel, A.B.

“…Critical currents (I CRIT ) extracted from the N-curves of a 6-T SRAM bit cell have been shown in recent research to be important and effective figures of…”
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Extraction of speculative SOI MOSFET models using self-heating-free targets by Qiang Chen, Zhi-Yuan Wu, Ly, T., Gupta, M., Wason, V., Jung-Suk Goo, Thuruthiyil, C., Radwin, M., Subba, N., Chiney, P., Suryagandh, S., Icel, A.B.

“…Speculative SPICE models (also referred to as evaluation-level or guess models), which are extracted based on projected device electrical characteristics…”
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Small-signal analytical MOSFET model for microwave frequency applications by Goswami, Anisha, Agrawal, Anju, Thuruthiyil, Ciby T., Gupta, Mridula, Gupta, R. S.

“…A small‐signal analytical MOSFET model suitable for microwave frequency applications is presented. The effect of parasitic elements, the fringing‐field effect,…”
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