Search Results - "Thuaire, A."

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  1. 1

    Biosensing extracellular vesicles: contribution of biomolecules in affinity-based methods for detection and isolation by Gaillard, M, Thuaire, A, Nonglaton, G, Agache, V, Roupioz, Y, Raillon, C

    Published in Analyst (London) (21-03-2020)
    “…Extracellular Vesicles (EVs) are lipid vesicles secreted by cells that allow intercellular communication. They are decorated with surface proteins, which are…”
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    Journal Article
  2. 2

    Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric by Frank, T., Moreau, S., Chappaz, C., Leduc, P., Arnaud, L., Thuaire, A., Chery, E., Lorut, F., Anghel, L., Poupon, G.

    Published in Microelectronics and reliability (01-01-2013)
    “…In this paper, reliability of Through Silicon via (TSV) interconnects is analyzed for two technologies. First part presents an exhaustive analysis of Cu…”
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    Journal Article
  3. 3

    Resistance increase due to electromigration induced depletion under TSV by Frank, T, Chappaz, C, Leduc, P, Arnaud, L, Lorut, F, Moreau, S, Thuaire, A, El Farhane, R, Anghel, L

    “…This paper focuses on the EM induced voiding in a line ended by a TSV, and proposes an analytical model based on the link between the monitored electrical…”
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    Conference Proceeding
  4. 4

    Forward-bias degradation in 4H-SiC p+nn+ diodes: Influence of the mesa etching by Camara, N., Thuaire, A., Bano, E., Zekentes, K.

    “…We have investigated the appearance of defects in silicon carbide p+nn+ 4H–SiC diodes by observing the forward‐bias‐induced light emission through the…”
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    Journal Article
  5. 5

    Optical mapping of aluminum doped p-type SiC wafers by Wellmann, P. J., Straubinger, T., Künecke, U., Müller, R., Sakwe, S. A., Pons, M., Thuaire, A., Crisci, A., Mermoux, M., Auvray, L., Camassel, J.

    “…We discuss the application of optical techniques to address the spatial distribution of electronic properties of highly aluminum doped p‐type SiC wafers;…”
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    Journal Article
  6. 6

    Investigation on TSV impact on 65nm CMOS devices and circuits by Chaabouni, H, Rousseau, M, Leduc, P, Farcy, A, El Farhane, R, Thuaire, A, Haury, G, Valentian, A, Billiot, G, Assous, M, De Crecy, F, Cluzel, J, Toffoli, A, Bouchu, D, Cadix, L, Lacrevaz, T, Ancey, P, Sillon, N, Flechet, B

    “…4μm wide copper Through Silicon Vias (TSV) were processed on underlying 65nm CMOS devices and circuits in order to evaluate the impact of the three-dimensional…”
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    Conference Proceeding
  7. 7
  8. 8

    Electromigration behavior of 3D-IC TSV interconnects by Frank, T., Moreau, S., Chappaz, C., Arnaud, L., Leduc, P., Thuaire, A., Anghel, L.

    “…The electromigration (EM) behavior of Through Silicon Via (TSV) interconnects used for 3D integration is studied. Impact of the TSV section size on EM lifetime…”
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    Conference Proceeding
  9. 9

    Integration and frequency dependent electrical modeling of Through Silicon Vias (TSV) for high density 3DICs by Cadix, L., Rousseau, M., Fuchs, C., Leduc, P., Thuaire, A., El Farhane, R., Chaabouni, H., Anciant, R., Huguenin, J.-L., Coudrain, P., Farcy, A., Bermond, C., Sillon, N., Flechet, B., Ancey, P.

    “…Evaluation of Through Silicon Via (TSV) electrical parameters is mandatory to improve heterogeneous 3D chip performance in the frame of a "more than Moore"…”
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    Conference Proceeding
  10. 10

    A successful implementation of dual damascene architecture to copper TSV for 3D high density applications by El Farhane, Rebha, Assous, M, Leduc, P, Thuaire, A, Bouchu, D, Feldis, H, Sillon, N

    “…Dual damascene integration was applied to High Density Through Silicon Vias in order to provide a low-cost TSV process. The architecture was developed for 3…”
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    Conference Proceeding