Search Results - "Thrivikraman, T.K."
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SiGe HBT X-Band LNAs for Ultra-Low-Noise Cryogenic Receivers
Published in IEEE microwave and wireless components letters (01-07-2008)“…We report results on the cryogenic operation of two different monolithic X-band silicon-germanium (SiGe) heterojunction bipolar transistor low noise amplifiers…”
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Journal Article -
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On the Radiation Tolerance of SiGe HBT and CMOS-Based Phase Shifters for Space-Based, Phased-Array Antenna Systems
Published in IEEE transactions on nuclear science (01-12-2008)“…We report the first irradiation results on high-frequency SiGe HBT and CMOS phase shifters for space-based, phased-array antennas used in radar or wireless…”
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Journal Article -
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A two-channel, ultra-low-power, SiGe BiCMOS receiver front-end for X-band phased array radars
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01-10-2009)“…We present an ultra-low-power SiGe BiCMOS receiver front-end for X-band phased-array radar systems. The receiver, which consists of two LNAs and a 3-bit phase…”
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Conference Proceeding
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A 2 mW, Sub-2 dB Noise Figure, SiGe Low-Noise Amplifier For X-band High-Altitude or Space-based Radar Applications
Published in 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (01-06-2007)“…This paper presents a low-power X-band low-noise amplifier (LNA) implemented in silicon-germanium (SiGe) technology targeting high-altitude or space-based…”
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Conference Proceeding -
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A novel device structure using a shared-subcollector, cascoded inverse-mode SiGe HBT for enhanced radiation tolerance
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01-10-2009)“…We present a novel device structure using an inverse-mode, cascoded (IMC) SiGe HBT for improved tolerance of heavy ion irradiation. The cascoded SiGe device…”
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Conference Proceeding -
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An experimental investigation of RF safe-operating-area (SOA) in SiGe HBTs on SOI
Published in 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (01-10-2009)“…The RF safe-operating-area of a variety of both bulk and thick-film SOI SiGe HBTs SiGe has been investigated using DC and pulsed-mode output characteristics,…”
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Conference Proceeding -
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On the large-signal robustness of SiGe HBT LNAs for high-frequency wireless applications
Published in 2010 IEEE Radio and Wireless Symposium (RWS) (01-01-2010)“…We present measured results and analysis from high-power testing of three different X-band SiGe HBT LNAs. The custom measurement setup allowed high RF power…”
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Conference Proceeding -
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On the large-signal robustness of SiGe HBT LNAs for high-frequency wireless applications
Published in 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (01-01-2010)“…We present measured results and analysis from high-power testing of three different X-band SiGe HBT LNAs. The custom measurement setup allowed high RF power…”
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Conference Proceeding -
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High gain, high linearity, L-band SiGe low noise amplifier with fully-integrated matching network
Published in 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) (01-01-2010)“…This paper presents an L-band silicon-germanium (SiGe) low-noise amplifier (LNA) for use in Global Positioning System (GPS) receivers. Implemented in a 200 GHz…”
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Conference Proceeding -
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A High-Linearity, X-Band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems
Published in 2009 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (01-01-2009)“…We present a high-dynamic range (HDR) X-band LNA implemented in silicon-germanium (SiGe) technology targeting high-performance radar and wireless…”
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Conference Proceeding -
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The Impact of Technology Node Scaling on nMOS SPDT RF Switches
Published in 2008 European Microwave Integrated Circuit Conference (01-10-2008)“…This work presents a comparison of three single-pole double-throw (SPDT) nMOS RF switches implemented in commercially available Si-based 180, 130, and 90 nm…”
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Conference Proceeding -
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An LCP package model for use in chip/package co-design of an X-band SiGe Low Noise Amplifier
Published in 2009 IEEE 18th Conference on Electrical Performance of Electronic Packaging and Systems (01-10-2009)“…We present the modeling of a liquid crystal polymer (LCP) package for use with an X-band SiGe HBT Low Noise Amplifier (LNA). The package consists of a 2 mil…”
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Conference Proceeding