Search Results - "Thorbeck, Ted"
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1
Demonstrating multi-round subsystem quantum error correction using matching and maximum likelihood decoders
Published in Nature communications (18-05-2023)“…Quantum error correction offers a promising path for performing high fidelity quantum computations. Although fully fault-tolerant executions of algorithms…”
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Journal Article -
2
Formation of strain-induced quantum dots in gated semiconductor nanostructures
Published in AIP advances (01-08-2015)“…A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many unintentional dots (also known as disorder dots) which are…”
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Journal Article -
3
Two-Level-System Dynamics in a Superconducting Qubit Due to Background Ionizing Radiation
Published in PRX quantum (01-06-2023)“…Superconducting qubit lifetimes must be both long and stable to provide an adequate foundation for quantum computing. This stability is imperiled by two-level…”
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Journal Article -
4
Readout-Induced Suppression and Enhancement of Superconducting Qubit Lifetimes
Published in Physical review letters (01-03-2024)“…It has long been known that the lifetimes of superconducting qubits suffer during readout, increasing readout errors. We show that this degradation is due to…”
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Journal Article -
5
Electrostatic and strain-induced quantum dots in Silicon nanostructures
Published 01-01-2013“…Quantum dots (QDs) are nanometer scale regions that can trap charges. In this dissertation I describe my work on understanding the reproducibility of silicon…”
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Dissertation -
6
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Published in IEEE transactions on nanotechnology (01-09-2012)“…Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be…”
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Journal Article -
7
Readout-induced suppression and enhancement of superconducting qubit lifetimes
Published 17-05-2023“…It has long been known that the lifetimes of superconducting qubits suffer during readout, increasing readout errors. We show that this degradation is due to…”
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Journal Article -
8
High-fidelity gates in a transmon using bath engineering for passive leakage reset
Published 06-11-2024“…Leakage, the occupation of any state not used in the computation, is one of the of the most devastating errors in quantum error correction. Transmons, the most…”
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Journal Article -
9
TLS Dynamics in a Superconducting Qubit Due to Background Ionizing Radiation
Published 10-10-2022“…PRX Quantum 4, 020356, 2023 Superconducting qubit lifetimes must be both long and stable to provide an adequate foundation for quantum computing. This…”
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Journal Article -
10
Matching and maximum likelihood decoding of a multi-round subsystem quantum error correction experiment
Published 20-04-2022“…Nat Commun 14, 2852 (2023) Quantum error correction offers a promising path for performing quantum computations with low errors. Although a fully…”
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Journal Article -
11
Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures
Published 11-09-2014“…Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that…”
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Journal Article -
12
Electrostatic and strain-induced quantum dots in Silicon nanostructures
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Dissertation -
13
Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire
Published 24-01-2012“…We determine the locations of unintentional quantum dots (U-QDs) in a silicon nanowire with a precision of a few nanometers by comparing the capacitances to…”
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Journal Article -
14
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Published 02-07-2012“…Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be…”
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Journal Article -
15
Digital coherent control of a superconducting qubit
Published 20-06-2018“…Phys. Rev. Applied 11, 014009 (2019) High-fidelity gate operations are essential to the realization of a fault-tolerant quantum computer. In addition, the…”
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Journal Article -
16
Location and cause of surface potential fluctuations in an SOI nanowire
Published in 2011 International Semiconductor Device Research Symposium (ISDRS) (01-12-2011)“…Moving to a three dimensional architecture, such as finFETs (field effect transistor), tri-gate FETS or nanowires, will allow semiconductor devices to scale…”
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