Search Results - "Thompson, C.V"

Effects of forward gate bias stressing on the leakage current of AlGaN/GaN high electron mobility transistors by Gao, Y., Sasangka, W.A., Thompson, C.V., Gan, C.L.

“…Reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) under forward gate bias was studied. During stressing, devices were observed to…”
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Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation by Syaranamual, G.J., Sasangka, W.A., Made, R.I., Arulkumaran, S., Ng, G.I., Foo, S.C., Gan, C.L., Thompson, C.V.

“…We have investigated the influence of the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistors (HEMTs) on their reliability…”
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Crack-like grain-boundary diffusion wedges in thin metal films by Gao, H., Zhang, L., Nix, W.D., Thompson, C.V., Arzt, E.

“…Constrained grain-boundary diffusion in polycrystalline thin metal films on substrates is studied as a strongly coupled elasticity and grain-boundary diffusion…”
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Structural analysis of metalorganic chemical vapor deposited AIN nucleation layers on Si (1 1 1) by Zang, K.Y, Wang, L.S, Chua, S.J, Thompson, C.V

“…AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers on Si (1 1 1) substrates…”
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The yield stress of polycrystalline thin films by Thompson, C.V.

“…In recent experiments it has been shown that the yield stress of polycrystalline thin films depends separately on the film thickness and the grain size. It was…”
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Steady-state grain-size distributions resulting from grain growth in two dimensions by Fayad, W., Thompson, C.V., Frost, H.J.

“…In order to develop a more detailed understanding of grain growth in bulk systems, there has been extensive modeling and simulation work on the simpler problem…”
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Phase-Change Materials in Optically Triggered Microactuators by Kalb, J.A., Qiang Guo, Xiaoqiang Zhang, Yi Li, Chornghaur Sow, Thompson, C.V.

“…Phase-change materials have been extensively used for optical data storage in commercial rewritable compact disks and digital video disks. These materials are…”
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Computer simulation of strain energy effects vs surface and interface energy effects on grain growth in thin films by Carel, R., Thompson, C.V., Frost, H.J.

“…A computer simulation of grain growth in two dimensions has been used to model microstructural evolution in Ag (001)Ni thin films. Two orientation dependent…”
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P17-04 An automated tool for selection of chemical analogues to facilitate development of new physiologically-based kinetic models using a read-across approach by Thompson, C.V., Webb, S.D., Leedale, J., Penson, P.E., Paini, A., Ebbrell, D., Madden, J.C.

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Growth of giant grains in silver thin films by Greiser, J, Müller, D, Müllner, P, Thompson, C.V, Arzt, E

“…It is shown experimentally for annealed silver films that film thickness, grain size and texture are strongly related. It was found that three regimes of…”
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A hierarchical reliability analysis for circuit design evaluation by Riege, S.P., Thompson, C.V., Clement, J.J.

“…We suggest a computationally efficient and flexible strategy for assessment of reliability of integrated circuits. The concept of hierarchical reliability…”
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Matching Glass-Forming Ability with the Density of the Amorphous Phase by Li, Y, Guo, Q, Kalb, J.A, Thompson, C.V

“…The density of the amorphous phase of metals is generally thought to be related to glass formation, but this correlation has not been demonstrated…”
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Competition between strain and interface energy during epitaxial grain growth in Ag films on Ni(001) by Floro, J.A., Thompson, C.V., Carel, R., Bristowe, P.D.

“…Epitaxial Grain Growth (EGG) is an orientation-selective process that can occur in polycrystalline thin films on single crystal substrates. EGG is driven by…”
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Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition by Zhao, Jing, Lu, Li, Thompson, C.V., Lu, Y.F., Song, W.D.

“…Completely (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films deposited on (100)-silicon wafers with SrTiO3 (STO)/MgO as a buffer layer system and YBCO as a…”
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Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress by Tan, H.T., Gao, Y., Syaranamual, G.J., Sasangka, W.A., Foo, S.C., Lee, K.H., Arulkumaran, S., Ng, G.I., Thompson, C.V., Gan, C.L.

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Methodology for electromigration critical threshold design rule evaluation by Clement, J.J., Riege, S.P., Cvijetic, R., Thompson, C.V.

“…We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design…”
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Impact of carbon impurities on the initial leakage current of AlGaN/GaN high electron mobility transistors by Sasangka, W.A., Gao, Y., Gan, C.L., Thompson, C.V.

“…We have systematically studied the origin of high gate-leakage currents in AlGaN/GaN high electron mobility transistors (HEMTs). Devices that initially had a…”
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Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation by Sasangka, W.A., Syaranamual, G.J., Gao, Y., I Made, R., Gan, C.L., Thompson, C.V.

“…We have systematically studied the effects of SixN1−x passivation density on the reliability of AlGaN/GaN high electron mobility transistors. Upon stressing,…”
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Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects by Srikar, V.T, Thompson, C.V

“…Interaction of stress-relief induced crystallographic defecs with translating erosion voids to cause a transition to slit-like void shapes has been shown to be…”
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Characterisation of defects generated during constant current InGaN-on-silicon LED operation by Made, R.I, Gao, Yu, Syaranamual, G.J., Sasangka, W.A., Zhang, L., Nguyen, Xuan Sang, Tay, Y.Y., Herrin, J.S., Thompson, C.V., Gan, C.L.

“…We studied the degradation of MOCVD-grown InGaN LEDs on Si substrates under constant current stressing. Characterisations using Deep Level Transient…”
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