Search Results - "Thibauld Cazimajou"
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Quenching Statistics of Silicon Single Photon Avalanche Diodes
Published in IEEE journal of the Electron Devices Society (01-01-2021)“…The statistical behavior of silicon-based single-photon-avalanche-diodes (SPADs) is investigated by using self-consistent 3-D Monte Carlo simulations. The…”
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Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology
Published in Photonics (01-06-2024)“…The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and…”
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Transient thermal 2D FEM analysis of SiC MOSFET in short-circuit operation including high-temperature material laws and phase transition of aluminum source electrode
Published in Microelectronics and reliability (01-08-2024)“…Understanding the electrothermal behavior of SiC MOSFET power devices under extreme operation conditions, such as short circuits, is crucial for their…”
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Material engineering of percolating silicon nanowire networks for reliable and efficient electronic devices
Published in Materials chemistry and physics (01-12-2019)“…Motivated to produce reliable and performant SiNW-based transistors, we present in this work how percolating networks composed of randomly oriented SiNWs,…”
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Indoor Optical Wireless Communication Coverage Optimization Using a SiPM Photoreceiver
Published in 2023 IEEE Wireless Communications and Networking Conference (WCNC) (01-03-2023)“…Although optical wireless communication (OWC) is seen as a promising complementary technology to radio frequency systems, its deployment is currently hampered…”
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Conference Proceeding -
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STI patterning to improve FSI PDP of SPAD integrated in FD-SOI CMOS technology
Published in Photonics (01-06-2024)“…The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and…”
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On the Electro-Thermal 2D FEM Parametric Analysis of SiC Vertical MOSFET Including Gate-Oxide Charge-Trapping Thermal Dependency: Application for Fast Transient Extreme Short-Circuit Operation
Published in 2023 30th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) (29-06-2023)“…This article proposes a generic and complete electro-thermal 4H-SiC physical Mosfet model. Static and transient in hard short-circuit operation behaviors are…”
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Conference Proceeding -
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Transient Thermal 2D FEM Analysis of SiC Mosfet in Short-Circuit Operation Including Solidus-Liquidus Phase Transition of the Aluminum Source Electrode
Published in 2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (17-04-2023)“…Understanding electrothermal SiC power Mosfet behavior in extremely abnormal operations such as short-circuit is a major need for certification, especially for…”
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Conference Proceeding -
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On the Development of Label-Free DNA Sensor Using Silicon Nanonet Field-Effect Transistors
Published in Proceedings (01-08-2017)“…In this paper, the process and electrical characteristics of DNA sensor devices based on silicon nanonet (SiNN) field-effect transistors are reported. The…”
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Journal Article