Search Results - "Thewalt, M.L.W"

Can highly enriched 28Si reveal new things about old defects? by Thewalt, M.L.W., Steger, M., Yang, A., Stavrias, N., Cardona, M., Riemann, H., Abrosimov, N.V., Churbanov, M.F., Gusev, A.V., Bulanov, A.D., Kovalev, I.D., Kaliteevskii, A.K., Godisov, O.N., Becker, P., Pohl, H.-J., Ager, J.W., Haller, E.E.

“…Recent studies have demonstrated remarkable improvements in the spectroscopy of shallow impurities by using highly enriched 28Si to eliminate the inhomogeneous…”
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Characterization of interfacial dopant layer for high-purity InP grown by MOCVD by Knight, D.G., Kelly, G., Hu, J., Watkins, S.P., Thewalt, M.L.W.

“…The effect of an interfacial layer of silicon on the apparent carrier concentration and mobility of InP grown by low-pressure MOCVD is determined. The presence…”
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Optical pumping and readout of bismuth hyperfine states in silicon for atomic clock applications by Saeedi, K., Szech, M., Dluhy, P., Salvail, J.Z., Morse, K.J., Riemann, H., Abrosimov, N.V., Nötzel, N., Litvinenko, K.L., Murdin, B.N., Thewalt, M.L.W.

“…The push for a semiconductor-based quantum information technology has renewed interest in the spin states and optical transitions of shallow donors in silicon,…”
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Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications by Lackner, D., Pitts, O.J., Najmi, S., Sandhu, P., Kavanagh, K.L., Yang, A., Steger, M., Thewalt, M.L.W., Wang, Y., McComb, D.W., Bolognesi, C.R., Watkins, S.P.

“…We report the OMVPE growth and characterization of InAsSb/InAs strain balanced multiple quantum wells lattice-matched to GaSb substrates for potential…”
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Towards 0.99999 28Si by Sennikov, P.G., Vodopyanov, A.V., Golubev, S.V., Mansfeld, D.A., Drozdov, M.N., Drozdov, Yu.N., Andreev, B.A., Gavrilenko, L.V., Pryakhin, D.A., Shashkin, V.I., Godisov, O.N., Glasunov, A.I., Safonov, A.Ju, Pohl, H.-J., Thewalt, M.L.W., Becker, P., Riemann, H., Abrosimov, N.V., Valkiers, S.

“…A new approach for producing high-purity silicon with isotopic enrichment of 28Si isotope is reported. The methods of centrifugal enrichment were modified to…”
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Spectroscopy of excitons and shallow impurities in isotopically enriched silicon—electronic properties beyond the virtual crystal approximation by Thewalt, M.L.W.

“…Recent high resolution spectroscopic studies of excitonic and impurity transitions in high-quality samples of isotopically enriched Si have dramatically…”
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Zeeman photoluminescence spectroscopy of isoelectronic beryllium pairs in silicon by Ishikawa, T., Sekiguchi, T., Yoshizawa, K., Naito, K., Thewalt, M.L.W., Itoh, K.M.

“…Isoelectronic beryllium (Be) pair centers in silicon have been studied by photoluminescence spectroscopy under a magnetic field. The photoluminescence of the…”
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Isotopic fingerprints of gold-containing luminescence centers in (28)Si by Steger, M, Yang, A, Sekiguchi, T, Saeedi, K, Thewalt, M.L.W., Henry, M O, Johnston, K, Riemann, H, Abrosimov, N V, Churbanov, M F, Gusev, A V, Bulanov, A D, Kaliteevski, I D, Godisov, O N, Becker, P, Pohl, H.-J.

“…We have recently shown that the dramatic reduction in linewidth of many deep luminescence centers in highly enriched (28)Si can lead to the observation of…”
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Isotopic fingerprints of gold-containing luminescence centers in 28Si by Steger, M., Yang, A., Sekiguchi, T., Saeedi, K., Thewalt, M.L.W., Henry, M.O., Johnston, K., Riemann, H., Abrosimov, N.V., Churbanov, M.F., Gusev, A.V., Bulanov, A.D., Kaliteevski, I.D., Godisov, O.N., Becker, P., Pohl, H.-J.

“…We have recently shown that the dramatic reduction in linewidth of many deep luminescence centers in highly enriched 28Si can lead to the observation of…”
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Photoluminescence studies of isotopically enriched silicon: isotopic effects on the indirect electronic band gap and phonon energies by Karaiskaj, D., Thewalt, M.L.W., Ruf, T., Cardona, M., Konuma, M.

“…We have performed high-resolution photoluminescence spectroscopy on silicon crystals with different isotopic composition and investigated the effects of this…”
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High resolution photoluminescence of sulphur- and copper-related isoelectronic bound excitons in highly enriched 28Si by Yang, A., Steger, M., Thewalt, M.L.W., Cardona, M., Riemann, H., Abrosimov, N.V., Churbanov, M.F., Gusev, A.V., Bulanov, A.D., Kovalev, I.D., Kaliteevskii, A.K., Godisov, O.N., Becker, P., Pohl, H.-J., Ager III, J.W., Haller, E.E.

“…We present a study of excitons bound to sulphur- and copper-related isoelectronic centres in highly enriched 28Si. The S-related centre, which has been shown…”
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Impurity absorption spectroscopy of the deep double donor sulfur in isotopically enriched silicon by Steger, M., Yang, A., Thewalt, M.L.W., Cardona, M., Riemann, H., Abrosimov, N.V., Churbanov, M.F., Gusev, A.V., Bulanov, A.D., Kovalev, I.D., Kaliteevskii, A.K., Godisov, O.N., Becker, P., Pohl, H.-J., Ager III, J.W., Haller, E.E.

“…The chalcogen deep double donor sulfur (S) has been studied extensively with optical methods in natural silicon ( Si nat ) . Recently, it was shown that the…”
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Photoluminescence studies of isotopically enriched silicon by Karaiskaj, D., Thewalt, M.L.W., Ruf, T., Cardona, M.

“…In this issue's Editor's Choice, the first high resolution photoluminescence (PL) investigations of isotopically pure silicon are reported. The cover figure…”
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Microstructure of ordered nanodomains induced by Bi surfactant in OMVPE-grown GaAsSb by Jiang, W.Y., Liu, J.Q., Zhang, X., Thewalt, M.L.W., Kavanagh, K.L., Watkins, S.P.

“…Bismuth surfactant is shown to have dramatic effects on the microstructure of GaAsSb alloys grown on nominally [0 0 1] InP substrates by organometallic vapor…”
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Effect of the isotopic mass of gallium on the indirect gap of GaP by Meyer, T.A, Karaiskaj, D, Thewalt, M.L.W, Cardona, M

“…We have obtained pair recombination luminescence spectra of four GaP crystals with different gallium isotopic compositions. The frequency shifts measured vs…”
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Isotopic mass dependence of the lattice parameter in silicon determined by measurement of strain-induced splitting of impurity bound exciton transitions by Yang, A., Lian, H.J., Thewalt, M.L.W., Uemura, M., Sagara, A., Itoh, K.M., Haller, E.E., Ager, J.W., Lyon, S.A.

“…The strain-induced splitting of the impurity bound exciton (BE) transitions in epitaxial layers of isotopically enriched 28Si grown on silicon substrates of…”
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Ultrathin type-II GaSb/GaAs quantum wells grown by OMVPE by Pitts, O.J., Watkins, S.P., Wang, C.X., Stotz, J.A.H., Meyer, T.A., Thewalt, M.L.W.

“…Heterostructures containing monolayer (ML) and submonolayer GaSb insertions in GaAs were grown using organometallic vapour phase epitaxy. At the GaAs-on-GaSb…”
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Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substrates by Rao, T.S., So, M.G., Jiang, W.Y., Mayer, T., Roorda, S., Gujrathi, S.C., Thewalt, M.L.W., Bolognesi, C.R., Watkins, S.P.

“…Coherently strained Al x Ga 1− x As y Sb 1− y epitaxial layers were grown over the range 0 < x < 0.2 and y ∼ 0.5 on InP substrates by organometallic vapor…”
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Photoluminescence of excitons bound to the radiation damage deffects B 41 (1.1509 eV) in silicon by Kaminskii, A.S., Lavrov, E.V., Karasyuk, V.A., Thewalt, M.L.W.

“…Using photoluminescence spectroscopy in magnetic fields up to 12 T, we show that the very shallow isoelectronic centers B 41 (1.15090 eV principal no phonon…”
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Photoluminescence of excitons bound to the radiation damage deffects B41 (1.1509 eV) in silicon by Kaminskii, A.S., Lavrov, E.V., Karasyuk, V.A., Thewalt, M.L.W.

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