Search Results - "Theunissen, M.J.J."

Impact of silicon substrates on leakage currents by Slotboom, J.W., Theunissen, M.J.J., de Bock, A.J.R.

“…Leakage currents of n + -p-diodes, made on four different groups of p-type silicon substrates, are investigated at temperatures between 50 and 120°C. At these…”
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Planar ion-channeling measurements on buried nano-films by Selen, L.J.M, Janssen, F.J.J, van IJzendoorn, L.J, de Voigt, M.J.A, Smulders, P.J.M, Theunissen, M.J.J

“…Planar MeV ion-channeling measurements on 2.2 nm thick Si 1− x Ge x nano-films buried in Si are presented. The presence of the nano-film leads to a step in the…”
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Strain measurements in ultra-thin buried films (<50 Å) with RBS ion channeling by Selen, L.J.M, Janssen, F.J.J, van IJzendoorn, L.J, Theunissen, M.J.J, Smulders, P.J.M, de Voigt, M.J.A

“…A method has been developed to measure strain in ultra-thin (<50 Å) buried films. The presence of the film leads to a step in the yield of the host crystal in…”
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Technology of the Diode Programmable Read Only Memory by Lifka, H., Woerlee, P.H., de Graaf, C., Hart, C.M., Janssen, P.J.M., Paulzen, G.M., Theunissen, M.J.J., de Vreede, P.W.H.

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Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency by Emons, C.H.H., Koster, R., Paxman, D., Theunissen, M.J.J.

“…Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best…”
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Resonant-Cavity-Enhanced Photodiode Using Silicon-on-Anything Technology by Sinnis, V.S., Seto, M., van Deurzen, M.H.W.A., Maas, H.G.R., Dekker, R., Alexander-Moonen, E.M.L., t'Hooft, G.W., Hoekstra, W., de Boer, W.B., Theunissen, M.J.J., Morrison, A.P.

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Reassessment of defect models in graphite strip heater zone-melt recrystallized material by non-destructive thin film diagnostics by Theunissen, M.J.J., Goemans, A.H., de Kock, A.J.R., Geijselaers, M.L.J., Baumgart, H.

“…Summary form only given. Recent state-of-the-art graphite strip heater ZMR wafers were examined by nondestructive diagnostic tools especially suited for the…”
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Defect analysis of SOI structures made by CO/sub 2/-laser zone melt recrystallization by Baumgart, H., Theunissen, M.J.J., Geyselaers, M.J.L., Mulder, J.M.L., Rutten, W.P.M., Haisma, J.

“…Summary form only given. During zone-melting of the polycrystalline silicon layer a large temperature gradient exists between the molten Si layer and the…”
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Selective-epitaxial base technology with 14 ps ECL-gate delay, for low power wide-band communication systems by Pruijmboom, A., Terpstra, D., Timmering, C.E., de Boer, W.B., Theunissen, M.J.J., Slotboom, J.W., Hueting, R.J.E., Hageraats, J.J.E.W.

“…A silicon bipolar technology is presented that incorporates a selectively epitaxially grown base in a double-polysilicon transistor. Si-bases as well as…”
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A Microwave Method for Contactless Measurement of the Lifetime of Free Carriers in Silicon Wafers by Otaredian, T., Middelhoek, S., Theunissen, M.J.J.

“…Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determined by measuring the reflected-microwave power. The…”
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