Search Results - "Therrien, R. J."

Pressure-induced changes in the conductivity of AlGaN∕GaN high-electron mobility-transistor membranes by Kang, B. S., Kim, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N.G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

“…AlGaN ∕ GaN high-electron-mobility transistors (HEMTs) show a strong dependence of source∕drain current on the piezoelectric-polarization-induced…”
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Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane by Kang, B. S., Kim, J., Jang, S., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J., Chu, S. N. G., Baik, K., Gila, B. P., Abernathy, C. R., Pearton, S. J.

“…The changes in the capacitance of the channel of an Al Ga N ∕ Ga N high-electron-mobility transistor (HEMT) membrane structure fabricated on a Si substrate…”
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Electrical detection of deoxyribonucleic acid hybridization with AlGaN∕GaN high electron mobility transistors by Kang, B. S., Pearton, S. J., Chen, J. J., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J.

“…Au-gated AlGaN∕GaN high electron mobility transistor (HEMT) structures were functionalized in the gate region with label-free 3′-thiol-modified…”
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Electrical detection of deoxyribonucleic acid hybridization with Al Ga N ∕ Ga N high electron mobility transistors by Kang, B. S., Pearton, S. J., Chen, J. J., Ren, F., Johnson, J. W., Therrien, R. J., Rajagopal, P., Roberts, J. C., Piner, E. L., Linthicum, K. J.

“…Au-gated Al Ga N ∕ Ga N high electron mobility transistor (HEMT) structures were functionalized in the gate region with label-free 3 ′ -thiol-modified…”
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Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on α(6H)-SiC substrates : III-V nitrides and silicon carbide by HANSER, A. D, WOLDEN, C. A, PERRY, W. G, ZHELEVA, T, CARLSON, E. P, BANKS, A.-D, THERRIEN, R. J, DAVIS, R. F

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Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates by Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., Therrien, R. J., Davis, R. F.

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Performance of AlGaN/GaN HFETs fabricated on 100mm silicon substrates for wireless basestation applications by BROWN, J. D, NAGY, W, THERRIEN, R. J, HANSON, A. W, VESCAN, A, SINGHAL, S, PETERS, S, CHAUDHARI, A, LI, T, NICHOLS, R, BORGES, R, RAJAGOPAL, P, JOHNSON, J. W

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