Search Results - "Thamm, A"

Hallmark of quantum skipping in energy filtered lensless scanning electron microscopy by Thamm, A.-K., Wei, J., Zhou, J., Walker, C. G. H., Cabrera, H., Demydenko, M., Pescia, D., Ramsperger, U., Suri, A., Pratt, A., Tear, S. P., El-Gomati, M. M.

“…We simulate the electronic system of ejected electrons arising when a tip, positioned few 10 nm away from a surface, is operated in the field emission regime…”
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Searches for long-lived particles at the future FCC-ee by Verhaaren, C. B., Alimena, J., Bauer, M., Azzi, P., Ruiz, R., Neubert, M., Mikulenko, O., Ovchynnikov, M., Drewes, M., Klaric, J., Blondel, A., Rizzi, C., Sfyrla, A., Sharma, T., Kulkarni, S., Thamm, A., Suarez, R. Gonzalez, Rygaard, L.

“…The electron-positron stage of the Future Circular Collider, FCC-ee, is a frontier factory for Higgs, top, electroweak, and flavour physics. It is designed to…”
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Overview of dual damascene integration schemes in Cu BEOL integration by Kriz, J., Angelkort, C., Czekalla, M., Huth, S., Meinhold, D., Pohl, A., Schulte, S., Thamm, A., Wallace, S.

“…An overview of different dual damascene approaches is given. Three approaches – trench first, trench first with metal hardmask, and via first – are described…”
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Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy by Brandt, O., Muralidharan, R., Waltereit, P., Thamm, A., Trampert, A., von Kiedrowski, H., Ploog, K. H.

“…We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and…”
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Effects of a combined strength, flexibility and gait training intervention on gait kinematics of children and adolescents with Cerebral Palsy by Thamm, A., Valadão, P.

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Reactive molecular-beam epitaxy of GaN layers directly on 6H–SiC(0001) by Thamm, A., Brandt, O., Takemura, Y., Trampert, A., Ploog, K. H.

“…We investigate the quality of GaN layers directly grown on 6H–SiC(0001) substrates by reactive molecular-beam epitaxy. Despite a pure three-dimensional…”
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Low-temperature scanning field emission microscope with polarization analysis by Thamm, A.-K., Demydenko, M., Michlmayr, T., Pescia, D., Ramsperger, U.

“…the design of the low-temperature scanning probe microscope, which works in field emission regime with spin polarization analysis, is proposed. A performance…”
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Electron energy analysis in Scanning Field Emission Microscopy using a Bessel box energy analyzer by Bodik, M, Demydenko, M., Walker, C. G. H., Bahler, T., Michlmayr, T., Thamm, A.-K., Ramsperger, U., Pratt, A., Tear, S.P., El Gomati, M.M., Pescia, D.

“…In this study, we use Scanning Field Emission Microscopy (SFEM) combined with a miniature electron energy analyzer known as a Bessel box to measure electron…”
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Radiography and frontal plane knee dynamics in Achondroplasia during walking and running by Hösl, M., Afifi, F.K., Thamm, A., Wagner, F., Nader, S.

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Growth of high-quality (Al,Ga)N and (Ga,In)N heterostructures on SiC(0001) by both plasma-assisted and reactive molecular beam epitaxy by Ploog, K. H., Brandt, O., Muralidharan, R., Thamm, A., Waltereit, P.

“…We discuss the strategies essential for the growth of high-quality (Al,Ga)N/GaN and (Ga,In)N/GaN heterostructures on SiC(0001) substrates by molecular beam…”
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Scanning Field Emission Microscopy with Spin and Energy Analysis by Thamm, A-K, Wei, J., Demydenko, M., Walker, C. G. H., Pescia, D., Ramsperger, U., Pratt, A., Tear, S. P., El Gomati, M. M.

“…Scanning Field Emission Microscopy with Polarization Analysis was recently introduced to detect the spin polarization of electrons excited in the field…”
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Key issues for the growth of high quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0 0 0 1) by molecular beam epitaxy by Brandt, O, Muralidharan, R, Thamm, A, Waltereit, P, Ploog, K.H

“…We identify and discuss the essential strategies for the growth of (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by both plasma-assisted and…”
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Modified fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth by Walther, C, Blum, R P, Niehus, H, Thamm, A, Masselink, W T

“…The presence of InAs quantum dots on a {100} GaAs surface results in a pronounced increase of the Fermi level pinning energy. Using room-temperature…”
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Systemintegration of microsystems/chip elements in miniaturized automata for high-throughput synthesis and screening in biology, biochemistry and chemistry by SCHOBER, A, SCHLINGLOFF, G, THAMM, A, KIEL, H. J, TOMANDL, D, GEBINOGA, M, DÖRING, M, KÖHLER, J. M, MAYER, G

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Line Shape Analysis of Photoreflectance Excitation Spectra of GaN Films on 6H-SiC(0001) by Behn, U., Thamm, A., Brandt, O., Grahn, H.T.

“…The line shape of photoreflectance excitation (PRE) spectra of bulk‐like GaN films grown by molecular beam epitaxy has been investigated experimentally and…”
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Morphology of GaN Surfaces and GaN/(Al,Ga)N Interfaces Grown on 6H-SiC(0001) by Reactive Molecular Beam Epitaxy by Thamm, A., Brandt, O., Trampert, A., Ploog, K.H.

“…In this paper, we study the morphology of GaN surfaces and GaN/(Al,Ga)N interfaces fabricated by reactive MBE and the impact of interface roughness on the…”
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Comparative Study of the Electronic Band Structure of Strained C-plane and M-plane GaN Films by Polarized Photoreflectance Spectroscopy by Ghosh, S., Waltereit, P., Thamm, A., Brandt, O., Grahn, H.T., Ploog, K.H.

“…We have investigated a strained C‐plane GaN(0001) film on 6H‐SiC(0001) and a strained M‐plane GaN(1$\bar 1$00) film on γ‐LiAlO2(100) by polarized…”
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Temperature Dependence of the Photoreflectance Lineshape for GaN Films Grown by Molecular Beam Epitaxy by Behn, U., Thamm, A., Brandt, O., Grahn, H.T.

“…The photoreflectance (PR) lineshape of GaN films grown by molecular beam epitaxy was investigated in the temperature range of 10 to 400 K. At low temperatures,…”
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Holocene and recent peat growth rates on the Zululand coastal plain by Thamm, A.G., Grundling, P., Mazus, H.

“…Five Holocene to late Pleistocene peatlands (mires), those at Majiji, Manzengweya, Nhlangu, Mgobezeleni and Mfabeni on the Zululand Coastal Plain, South…”
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Fabrication of device-related GaN/(Al,Ga)N heterostructures on SiC(0001) by reactive MBE by Thamm, A., Brandt, O., Hilsenbeck, J., Lossy, R., Ploog, K.H.

“…High quality GaN/(Al,Ga)N based heterostructures have been grown on SiC(0001) by reactive molecular beam epitaxy (RMBE) using ammonia as nitrogen precursor…”
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