Search Results - "Thamankar, R."
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Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO3 based two-terminal devices – efficient way to control the synaptic amplification
Published in RSC advances (15-01-2024)“…Brain-inspired computing systems require a rich variety of neuromorphic devices using multi-functional materials operating at room temperature. Artificial…”
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Journal Article -
2
Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO 3 based two-terminal devices - efficient way to control the synaptic amplification
Published in RSC advances (10-01-2024)“…Brain-inspired computing systems require a rich variety of neuromorphic devices using multi-functional materials operating at room temperature. Artificial…”
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Journal Article -
3
Bio-inspired artificial synapse for neuromorphic computing based on NiO nanoparticle thin film
Published in Scientific reports (09-05-2023)“…The unprecedented need for data processing in the modern technological era has created opportunities in neuromorphic devices and computation. This is primarily…”
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4
Emulating Ebbinghaus forgetting behavior in a neuromorphic device based on low dimensional h-BN
Published in AIP advances (01-08-2024)“…Artificial synaptic devices that can mimic the biological synaptic functions of learning and forgetting are essential for the realization of neuromorphic…”
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5
Artificial synapse based on carbon quantum dots dispersed in indigo molecular layer for neuromorphic applications
Published in APL materials (01-04-2023)“…Conventional computers are limited in their performance due to the physical separation of the memory and processing units. To overcome this, parallel…”
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Investigation of the transient photo-response and switching window of an Al/indigo/Al device: unveiling negative photoconductivity and the photo-enhanced memory window
Published in Materials advances (15-07-2024)“…Memristors have redefined the technological horizon by seamlessly intertwining memory storage, data processing and sensing techniques such as light sensing…”
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7
Effect of controlled humidity on resistive switching of multilayer VO2 devices
Published in Materials science & engineering. B, Solid-state materials for advanced technology (01-02-2021)“…[Display omitted] •Robust fabrication of 2-probe resistive switching device using VO2 nanosheets on prefabricated Ag electrodes at ambient conditions.•The…”
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Room-Temperature Deep-UV Photoluminescence from Low-Dimensional Hexagonal Boron Nitride Prepared Using a Facile Synthesis
Published in ACS omega (27-09-2022)“…Identification and evaluation of defect levels in low-dimensional materials is an important aspect in quantum science. In this article, we report a facile…”
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A Comparative Study of Crystallography and Defect Structure of Corneal Nipple Array in Daphnis nerii Moth and Papilio polytes Butterfly Eye
Published in ACS omega (22-09-2020)“…Moth and butterfly ommatidial nanostructures have been extensively studied for their anti-reflective properties. Especially, from the point of view of…”
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Coexistence of synaptic behaviour and negative differential resistance at room temperature in the resistive switching device based on natural indigo molecules
Published in Dyes and pigments (01-11-2023)“…The memory storage and processing capability of human brain is throwing excitement and challenges to create a low power consuming “brain-like functioning…”
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Tilting, bending, and nonterminal sites in CO/Cu(001)
Published in Physical review letters (11-03-2011)“…Using scanning tunneling microscopy experiments in combination with first-principles calculations we have studied the geometric structure of the compressed…”
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12
Structural and magnetic instabilities in ultrathin Fe-rich alloy films on Cu(100)
Published in Physical review. B, Condensed matter and materials physics (23-02-2004)Get full text
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13
Effect of submonolayer coverage of Fe and Mn films on the magnetization direction of Ni/Cu(100)
Published in Journal of magnetism and magnetic materials (01-10-2004)“…The study of the origin of perpendicular magnetic anisotropy has been the highlight of research in magnetic ultrathin films recently. Ni/Cu(100) films are…”
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Journal Article -
14
Spike rate dependent synaptic characteristics in lamellar, multilayered alpha-MoO based two-terminal devices - efficient way to control the synaptic amplification
Published in RSC advances (15-01-2024)“…Brain-inspired computing systems require a rich variety of neuromorphic devices using multi-functional materials operating at room temperature. Artificial…”
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Journal Article -
15
Evidence for superparamagnetism in ultrathin Fe and FexMn1−x films on Cu(100)
Published in Journal of magnetism and magnetic materials (01-04-2005)“…We re-examine the onset of ferromagnetism of Fe/Cu(100) grown at 300K. We find evidence of superparamagnetism in the thickness interval ∼1.5–1.8ML since in…”
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16
Tuning spin reorientation transition of Ni/Cu(1 0 0) by Fe cap layers
Published in Journal of magnetism and magnetic materials (01-05-2004)“…Ni/Cu(100) is known to exhibit an “inverse” spin reorientation transition. In contrast to Fe or Co ultrathin films, the magnetization (M) rotates from in-plane…”
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Structural and magnetic properties of Fe-rich FexMn1−x ultrathin alloy films on Cu(1117)
Published in Journal of magnetism and magnetic materials (01-04-2005)“…Fe/Cu(100) films have been extensively studied and complex structural and magnetic properties have been found. Prominent among the properties is the change in…”
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18
Spin reorientation transition in FexNi1-x alloy films
Published in IEEE transactions on magnetics (01-09-2002)Get full text
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19
Low temperature nanoscale electronic transport on the MoS2 surface
Published in Applied physics letters (19-08-2013)“…Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS2) surface were performed at low temperature (30 K) under ultra-high vacuum…”
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Understanding defect kinetics in ultra-thin dielectric logic and memory devices using random telegraph noise analysis
Published in 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits (01-06-2015)“…The root cause of degradation and failure in nanoscale logic and memory devices originates from discrete defects (traps) that are created in the ultra-thin…”
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Conference Proceeding