Search Results - "Teyssandier, C."

Thermal Performances of Industrial 0.25-μm GaN Technology for Space Applications by Driad, S., Teyssandier, C., Chang, C., Brunel, L., Couturier, A.M., Brunel, V., Floriot, D., Stieglauer, H., Blanck, H.

“…This work is focused on both experimental and modelling analysis of the temperature effect on 0.25- \mu \mathrm{m} AlGaN/GaN HEMT performances. The…”
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E-band medium power amplifiers with gain control and output power detector by Couturier, A. M., Byk, E., Auvinet, C., Tranchant, S., Auxemery, P., Camiade, M., Teyssandier, C., Hosch, M., Stieglauer, H.

“…Two E-band MPA (71 to 76 GHz and 81 to 86 GHz), particularly well suited for the new generation of high capacity backhaul have been developed. The circuits…”
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0.1µm GaAs pHEMT technology and associated modelling for millimeter wave low noise amplifiers by Teyssandier, C., Stieglauer, H., Byk, E., Couturier, A., Fellon, P., Camiade, M., Blanck, H., Floriot, D.

“…Applications in the range of E to W bands are emerging during the last years specially in the field of Radio and security for active scanning systems. It…”
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An E-band very low noise amplifier with variable gain control on 100 nm GaAs pHEMT technology by Byk, E., Couturier, A. M., Camiade, M., Teyssandier, C., Hosch, M., Stieglauer, H., Fellon, P.

“…Design methodology and measurements of an E-band very low noise amplifier (LNA) are presented in this paper. This four stages MMIC is manufactured on UMS 4…”
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Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25μm power pHEMT technology by Dinari, M., Serru, V., Camiade, M., Teyssandier, C., Baglieri, D., Durand, E., Mallet-Guy, B., Plaze, J. P.

“…In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 µm Power pHEMT…”
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Wide band high linearity and high isolation mixer MMIC developed on GaAs 0.25µm Power pHEMT technology by Dinari, M., Serru, V., Camiade, M., Teyssandier, C., Baglieri, D., Durand, E., Mallet-Guy, B., Plaze, J.P.

“…In the frame of radar and warfare applications, a Monolithic Microwave Integrated Circuit (MMIC) Mixer has been developed using a UMS GaAs 0.25 mum Power pHEMT…”
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Verification of a frequency dispersion model in the performance of a GaAs pHEMT travelling-wave MMIC by Kallfass, I., Zhang, C., Grunenputt, J., Teyssandier, C., Schumacher, H.

“…The impact of frequency dispersive effects on typical figures of merit is investigated in a distributed MMIC realized in 0.15 /spl mu/m GaAs pHEMT technology…”
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Characterization and Modeling of Impact Ionization Effects on Small and Large Signal Characteristics of AlGaAs/GaInAs/GaAs PHEMTs by Teyssandier, C., De Groote, F., Sommet, R., Teyssier, J.-P., Chang, C., Leclerc, E., Carnez, B., Quere, R.

“…This paper presents an analysis of the impact ionization phenomenon encountered in AlGaAs/GaInAs/GaAs PHEMTs. Two characterizations techniques have been used…”
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Tests of a new corticoid in intra-articular injections; prednisolone butyl-acetate by WEISMANN-NETTER, R, KREWER, B, LORCH, P, TEYSSANDIER, C

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