Search Results - "Tetlak, Stephen"

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage by Chabak, Kelson D., Moser, Neil, Green, Andrew J., Walker, Dennis E., Tetlak, Stephen E., Heller, Eric, Crespo, Antonio, Fitch, Robert, McCandless, Jonathan P., Leedy, Kevin, Baldini, Michele, Wagner, Gunter, Galazka, Zbigniew, Li, Xiuling, Jessen, Gregg

“…Sn-doped gallium oxide (Ga2O3) wrap-gate fin-array field-effect transistors (finFETs) were formed by top-down BCl3 plasma etching on a native semi-insulating…”
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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition by Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

“…Si-doped Ga2O3 thin films were fabricated by pulsed laser deposition on semi-insulating (010) β-Ga2O3 and (0001) Al2O3 substrates. Films deposited on β-Ga2O3…”
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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETs by Chabak, Kelson D., McCandless, Jonathan P., Moser, Neil A., Green, Andrew J., Mahalingam, Krishnamurthy, Crespo, Antonio, Hendricks, Nolan, Howe, Brandon M., Tetlak, Stephen E., Leedy, Kevin, Fitch, Robert C., Wakimoto, Daiki, Sasaki, Kohei, Kuramata, Akito, Jessen, Gregg H.

“…We report enhancement-mode <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 (BGO) MOSFETs on a Si-doped homoepitaxial…”
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Ionic Metal-Oxide TFTs for Integrated Switching Applications by Schuette, Michael L., Green, Andrew J., Leedy, Kevin, Crespo, Antonio, Tetlak, Stephen E., Sutherlin, Karynn A., Jessen, Gregg H.

“…Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those…”
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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator by Chabak, K. D., Walker, Dennis E., Johnson, M. R., Crespo, A., Dabiran, A. M., Smith, D. J., Wowchak, A. M., Tetlak, S. K., Kossler, M., Gillespie, J. K., Fitch, R. C., Trejo, M.

“…This letter presents transistor device results on ultrathin AIN/GaN high-electron mobility transistors grown on a sapphire substrate with high dc/RF…”
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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped \beta -Ga2O3 MOSFETs by Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Fitch, Robert C., Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E., Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

“…A Sn-doped (100) β-Ga 2 O 3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) β-Ga 2 O 3…”
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Implementation of High-Power-Density X -Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process by Fitch, Robert C., Walker, Dennis E., Green, Andrew J., Tetlak, Stephen E., Gillespie, James K., Gilbert, Ryan D., Sutherlin, Karynn A., Gouty, William D., Theimer, James P., Via, Glen D., Chabak, Kelson D., Jessen, Gregg H.

“…A GaN high electron mobility transistor monolithic microwave integrated circuit (MMIC) designer typically has to choose a device design either for high-gain…”
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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals by Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

“…High-quality dielectrics with a low defect density at the dielectric/semiconductor interface are essential for the application of <inline-formula> <tex-math…”
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Defect Engineering at the Al 2 O 3 /(010) β -Ga 2 O 3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals by Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With $\sim$140-nm Gate Length by Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length by Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

“…High temperature (HT) electronics applications will require the development of a broad range of devices made using different materials. Among these devices,…”
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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga 2 O 3 MOSFETs by Green, Andrew J., Chabak, Kelson D., Heller, Eric R., Fitch, Robert C., Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E., Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H.

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3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped [Formula Omitted]-Ga2O3 MOSFETs by Green, Andrew J, Chabak, Kelson D, Heller, Eric R, Fitch, Robert C, Baldini, Michele, Fiedler, Andreas, Irmscher, Klaus, Wagner, Gunter, Galazka, Zbigniew, Tetlak, Stephen E, Crespo, Antonio, Leedy, Kevin, Jessen, Gregg H

“…A Sn-doped (100) [Formula Omitted]-Ga2O3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100)…”
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Implementation of High-Power-Density [Formula Omitted]-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process by Fitch, Robert C, Walker, Dennis E, Green, Andrew J, Tetlak, Stephen E, Gillespie, James K, Gilbert, Ryan D, Sutherlin, Karynn A, Gouty, William D, Theimer, James P, Via, Glen D, Chabak, Kelson D, Jessen, Gregg H

“…A GaN high electron mobility transistor monolithic microwave integrated circuit (MMIC) designer typically has to choose a device design either for high-gain…”
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Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETs by Liddy, Kyle J., Hendricks, Nolan S., Green, Andrew J., Popp, Andreas, Lindquist, Miles T., Leedy, Kevin D., Tetlak, Stephen E., Moser, Neil A., Wagner, Gunter, Chabak, Kelson D., Jessen, Gregg H.

“…Beta-phase gallium oxide (\beta-\mathrm{Ga}_{2}\mathrm{O}_{3}) has shown promise as a next-generation wide-bandgap semiconductor for use in power electronics…”
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Investigation of thermal effects in β-Ga2O3 MOSFET using pulsed IV by Moser, Neil A., Crespo, Antonio, Tetlak, Stephen E., Green, Andrew J., Chabak, Kelson D., Jessen, Gregg H.

“…Recently, β-Ga 2 O 3 FETs have been introduced [1]-[3] as potential devices for high power, switching, and RF applications with increased performance and more…”
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Scalability of zinc oxide thin-film transistors for RF amplifiers and DC switch applications by Jessen, Gregg Huascar, Schuette, Michael, Leedy, Kevin, Crespo, Antonio, Donigan, Thomas, Green, Andrew, Walker, Dennis, Tetlak, Stephen, Sutherlin, Karynn

“…In this work, we characterize the scalability of ZnO TFTs for RF transistor and DC switching applications through variations in channel length, total device…”
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