Search Results - "Tessmer, S H"

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    Single-Electron Capacitance Spectroscopy of Individual Dopants in Silicon by Gasseller, M, DeNinno, M, Loo, R, Harrison, J. F, Caymax, M, Rogge, S, Tessmer, S. H

    Published in Nano letters (14-12-2011)
    “…Motivated by recent transport experiments and proposed atomic-scale semiconductor devices, we present measurements that extend the reach of scanned-probe…”
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    Scanning-probe spectroscopy of semiconductor donor molecules by Tessmer, S. H, Kuljanishvili, I, Kayis, C, Harrison, J. F, Piermarocchi, C, Kaplan, T. A, Pfeiffer, L. N, West, K. W

    Published in Nature physics (01-03-2008)
    “…Semiconductor devices continue to press into the nanoscale regime, and new applications have been proposed for which a single dopant atom acts as the…”
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    Subsurface charge accumulation imaging of a quantum Hall liquid by Ashoori, R. C, Tessmer, S. H, Glicofridis, P. I, Levitov, L. S, Melloch, M. R

    Published in Nature (London) (05-03-1998)
    “…The unusual properties of two-dimensional electron systems that give rise to the quantum Hall effect have prompted the development of new microscopic models…”
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    Local atomic structure and discommensurations in the charge density wave of CeTe3 by Kim, H J, Malliakas, C D, Tomić, A T, Tessmer, S H, Kanatzidis, M G, Billinge, S J L

    Published in Physical review letters (09-06-2006)
    “…The local structure of in the incommensurate charge density wave (IC-CDW) state has been obtained using atomic pair distribution function analysis of x-ray…”
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    Modeling electric-field-sensitive scanning probe measurements for a tip of arbitrary shape by Kuljanishvili, Irma, Chakraborty, Subhasish, Maasilta, I.J., Tessmer, S.H., Melloch, M.R.

    Published in Ultramicroscopy (01-12-2004)
    “…We present a numerical method to model electric-field-sensitive scanning probe microscopy measurements which allows for a tip of arbitrary shape and invokes…”
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    Scanning electric field sensing for semiconductor dopant profiling by Crosser, M.S., Tessmer, S.H., Ghosh, Ruby N.

    Published in Applied surface science (15-07-2002)
    “…Electric field sensitive scanning probe microscopes (SPMs) can image the electronic properties of a semiconductor through an insulating layer—making the…”
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    Nanometer-scale capacitance spectroscopy of semiconductor donor molecules by Tessmer, S.H., Kuljanishvili, I., Kayis, C., Harrison, J.F., Piermarocchi, C., Kaplan, T.A.

    Published in Physica. B, Condensed matter (01-10-2008)
    “…We review recently reported scanned-probe capacitance measurements of electrons entering silicon donors in a gallium-arsenide heterostructure. Single-electron…”
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    Tunneling images of a 2D electron system in a quantizing magnetic field by Maasilta, I.J, Chakraborty, Subhasish, Kuljanishvili, I, Tessmer, S.H, Melloch, M.R

    “…We have applied a scanning probe method, subsurface charge accumulation imaging, to resolve the local structure of the interior of a semiconductor…”
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    Modeling single- and multiple-electron resonances for electric-field-sensitive scanning probes by Tessmer, S. H, Kuljanishvili, I

    Published 11-06-2008
    “…Nanotechnology 19 (2008) 445503. We have developed a modeling method suitable to analyze single- and multiple-electron resonances detected by…”
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    Imaging the low compressibility strips formed by the quantum hall liquid in a smooth potential gradient by Finkelstein, G, Glicofridis, P.I, Tessmer, S.H, Ashoori, R.C, Melloch, M.R

    “…We locally image the low-compressibility strip corresponding to integer Quantum Hall filling factor ν=2 and find that its width appears significantly larger…”
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    Scanning tunneling microscopy study of the CeTe3 charge density wave by Tomic, A, Rak, Zs, Veazey, J. P, Mahanti, S. D, Tessmer, S. H, Malliakas, C. D, Kanatzidis, M. G

    Published 19-08-2008
    “…Phys. Rev. B 79, 085422 (2009). We have studied the nature of the surface charge distribution in CeTe3. This is a simple, cleavable, layered material with a…”
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    Scanning-probe spectroscopy of semiconductor donor molecules by Kuljanishvili, I, Kayis, C, Harrison, J. F, Piermarocchi, C, Kaplan, T. A, Tessmer, S. H, Pfeiffer, L. N, West, K. W

    Published 24-12-2007
    “…Nature Physics 4, 227 (2008). Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum…”
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    Review: Nanometer-scale capacitance spectroscopy of semiconductor donor molecules by Tessmer, S H, Kuljanishvili, I, Kayis, C, Harrison, J F, Piermarocchi, C, Kaplan, T A

    Published in Physica. B, Condensed matter (01-10-2008)
    “…We review recently reported scanned-probe capacitance measurements of electrons entering silicon donors in a gallium-arsenide heterostructure. Single-electron…”
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    Journal Article
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    Dirac surface states in superconductors: a dual topological proximity effect by Sedlmayr, Nicholas, Goodwin, E. W, Gottschalk, Michael, Dayton, Ian M, Zhang, Can, Huemiller, Erik, Loloee, Reza, Chasapis, Thomas C, Salehi, Maryam, Koirala, Nikesh, Kanatzidis, Mercouri G, Oh, Seongshik, Van Harlingen, D. J, Levchenko, Alex, Tessmer, S. H

    Published 31-05-2018
    “…In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically…”
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