Search Results - "Tereshchenko, A.N"

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by [Si.sup.+] Ion Implantation by Tereshchenko, A.N, Korolev, D.S, Mikhaylov, A.N, Belov, A.I, Nikolskaya, A.A, Pavlov, D.A, Tetelbaum, D.I, Steinman, E.A

“…The effect of boron implantation on the light-emitting properties of dislocation structures formed in silicon by [Si.sup.+] ion implantation with subsequent…”
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Structure, phase composition, and some properties of melt grown GaSe:Er crystals by Borisenko, E.B., Timonina, A.V., Borisenko, D.N., Nikolaichik, V.I., Tereshchenko, A.N., Kolesnikov, N.N.

“…•Crystal growth from melt and quenching prove to increase Er solubility in GaSe.•Growth of Er2Se3 cubic phase in hexagonal ε-GaSe matrix is epitaxial.•Defects…”
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Physical properties of carbon films obtained by methane pyrolysis in an electric field by Brantov, S. K., Tereshchenko, A. N., Shteinman, E. A., Yakimov, E. B.

“…A method of synthesizing carbon films on single-crystal silicon substrates by methane pyrolysis in an electrical field is suggested. The pressure and…”
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Synthesis and Growth of GaSe1 – xSx (x = 0–1) Crystals from Melt. Phase Composition and Properties by Kolesnikov, N. N., Borisenko, E. B., Borisenko, D. N., Tereshchenko, A. N., Timonina, A. V.

“…Vertical zone melting under argon pressure is used to grow crystals of GaSe and GaS binary compounds, as well as solid solutions in the GaSe–GaS system. The…”
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Ceramic material ZnSe(Te) fabricated by nanopowder technology: Fabrication, phase transformations and photoluminescence by Kolesnikov, N.N., Borisenko, E.B., Borisenko, D.N., Zverkova, I.I., Tereshchenko, A.N., Timonina, A.V., Gnesin, I.B., Gartman, V.K.

“…New ZnSe ceramic material doped with Te is fabricated by nanopowder technology using cold compaction. It is found that phase composition, Te concentration and…”
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Dislocation photoluminescence in plastically deformed germanium by Shevchenko, S.A., Tereshchenko, A.N.

“…Dislocation photoluminescence (PL) was measured at 4.2K in p-type germanium single crystals (acceptor concentration Na∼1014cm−3 and density of as-grown…”
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Effect of copper on dislocation luminescence centers in silicon by Tereshchenko, A. N., Steinman, E. A., Mazilkin, A. A.

“…The effect of copper on dislocation luminescence centers in silicon has been investigated using photoluminescence and transmission electron microscopy. It has…”
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Features and mechanisms of growth of cubic silicon carbide films on silicon by Orlov, L. K., Steinman, E. A., Smyslova, T. N., Ivina, N. L., Tereshchenko, A. N.

“…The mechanisms and specific features of the growth of silicon carbide layers through vacuum chemical epitaxy in the range of growth temperatures from 1000 to…”
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Luminescence induced in diamond by [He.sup.+] ion implantation into SiC/C composites with an inverse opal structure by Tereshchenko, A.N, Zinenko, V.I, Khodos, I.I, Agafonov, Yu. A, Zhokhov, A.A, Masalov, V.M, Steinman, E.A, Emelchenko, G.A

“…The photoluminescence induced in diamond by helium ion implantation into SiC/C nanocomposite samples and their structure revealed by high-resolution…”
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Synthesis of a periodic SiC/C nanostructure by Emel’chenko, G. A., Masalov, V. M., Zhokhov, A. A., Maksimuk, M. Yu, Fursova, T. N., Bazhenov, A. V., Zver’kova, I. I., Khasanov, S. S., Shteinman, E. A., Tereshchenko, A. N.

“…Highly porous periodic structures consisting of a three-dimensional replica of pores in the initial opal lattice have been synthesized by high-temperature…”
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Three-dimensional periodic lattice of Zr[O.sub.2] nanocrystals in transparent silica matrix by Masalov, V.M, Zhokhov, A.A, Gorelik, V.S, Kudrenko, E.A, Shteinman, E.A, Tereshchenko, A.N, Maksimuk, M. Yu, Bazhenov, A.V, Zverkova, I.I, Emelchenko, G.A

“…The conditions for synthesizing an opal--zirconia--carbon nanocomposite in the form of monolithic (without pores) transparent silica with an ordered…”
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