Search Results - "Teranishi, N."

Special Issue on Solid-State Image Sensors by Fossum, E.R., Hynecek, J., Tower, J., Teranishi, N., Nakamura, J., Magnan, P., Theuwissen, A.

“…This editorial summarizes the contents of this special issue of the IEEE Transactions on Electron Devices on solid state image sensors. Several researches on…”
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Required Conditions for Photon-Counting Image Sensors by Teranishi, N.

“…The required conditions of photon counting and single-photon detection are theoretically derived for four different approaches: 1) photon counting and…”
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Infrared focal plane array incorporating silicon IC process compatible bolometer by Tanaka, A., Matsumoto, S., Tsukamoto, N., Itoh, S., Chiba, K., Endoh, T., Nakazato, A., Okuyama, K., Kumazawa, Y., Hijikawa, M., Gotoh, H., Tanaka, T., Teranishi, N.

“…A 128/spl times/128 element bolometer infrared image sensor using thin film titanium is proposed. The device is a monolithically integrated structure with a…”
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Foreword special issue on solid-state image sensors by Fossum, E.R., Teranishi, N., Theuwissen, A.J.P., Hynecek, J.

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Thermionic-emission-based barrier height analysis for precise estimation of charge handling capacity in CCD registers by Kawai, S., Mutoh, N., Teranishi, N.

“…In designing charge-coupled device (CCD) image sensors, it is essential to be able to estimate charge handling capacity. Because electrons have thermal energy,…”
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Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors by Murakami, I., Nakano, T., Hatano, K., Nakashiba, Y., Furumiya, M., Nagata, T., Kawasaki, T., Utsumi, H., Uchiya, S., Arai, K., Mutoh, N., Kohno, A., Teranishi, N., Hokari, Y.

“…New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image…”
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A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications by Yamada, T., Hatano, K., Morimoto, M., Furumiya, M., Nakashiba, Y., Uchiya, S., Tanabe, A., Kawakami, Y., Nakano, T., Kawai, S., Suwazono, S., Utsumi, H., Katoh, S., Syohji, D., Taniji, Y., Mutoh, N., Orihara, K., Teranishi, N., Hokari, Y.

“…A 1/2-in 1.3 M-pixel progressive-scan interline-transfer charge-coupled-device (IT-CCD) image sensor has been developed for small, low-power mega-pixel digital…”
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Stacked image sensor using chlorine-doped crystalline selenium photoconversion layer composed of size-controlled polycrystalline particles by Imura, S., Kikuchi, K., Miyakawa, K., Ohtake, H., Kubota, M., Okino, T., Hirose, Y., Kato, Y., Teranishi, N.

“…We demonstrate a stacked complementary metal-oxide semiconductor (CMOS) image sensor overlaid with a chlorine (Cl)-doped crystalline selenium (c-Se)…”
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Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors by Tanabe, A., Kudoh, Y., Kawakami, Y., Masubuchi, I., Kawai, S., Yamada, T., Morimoto, M., Arai, K., Hatano, K., Furumiya, M., Naliashiba, Y., Mutoh, N., Orihara, K., Teranishi, N.

“…Technologies for narrow-channel effect suppression in photodiodes (PDs) and vertical CCDs (V-CCDs) and for smear reduction in PDs have been developed in order…”
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A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor by Furumiya, M., Suwazono, S., Morimoto, M., Nakashiba, Y., kawakami, Y., Nakano, T., Satoh, T., Katoh, S., Syohji, D., Utsumi, H., Taniji, Y., Mutoh, N., Orihara, K., Teranishi, N., Hokari, Y.

“…A 30 frames/s 2/3-in 1.3 M-pixel progressive scan interline-transfer charge-coupled device (IT-CCD) image sensor has been developed for video and digital…”
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Smear reduction in the interline CCD image sensor by Teranishi, N., Ishihara, Y.

“…An undesirable smear in a vertical-overflow-drain interline CCD image sensor (VOD IL-CCD) has been analyzed. This smear has been reduced by using a new…”
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Driving voltage reduction in a two-phase CCD by suppression of potential pockets in inter-electrode gaps by Yamada, T., Kawakami, Y., Nakano, T., Mutoh, N., Orihara, K., Teranishi, N.

“…This study reports an optimum design for a two-phase charge-coupled device (CCD) and limitations on its driving voltage reduction. The two-phase CCD to be used…”
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Photo response analysis in CCD image sensors with a VOD structure by Kawai, S., Morimoto, M., Mutoh, N., Teranishi, N.

“…Photo response in CCD image sensors with Vertical-Overflow-Drain (VOD) was analyzed in an attempt to discover a way to lessen the photo response rise that…”
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Optical limitations to cell size reduction in IT-CCD image sensors by Satoh, T., Mutoh, N., Furumiya, M., Murakami, I., Suwazono, S., Ogawa, C., Hatano, K., Utsumi, H., Kawai, S., Arai, K., Morimoto, M., Orihara, K., Tamura, T., Teranishi, N., Hokari, Y.

“…We have determined the practical limits of cell size reduction in interline-transfer charge-coupled device (IT-CCD) image sensors, which result from…”
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Studies on estimation of the age by human epidermis by Teranishi, N

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An infrared-bi-color Schottky-barrier CCD image sensor for precise thermal images by Konuma, K., Asano, Y., Masubuchi, K., Utsumi, H., Tohyama, S., Endo, T., Azuma, H., Teranishi, N.

“…An infrared-bi-color image sensor was developed with a barrier height controlled Schottky-barrier photo diode array for precise temperature images. Low and…”
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Partition noise in CCD signal detection by Teranishi, N., Mutoh, N.

“…Reset noise in CCD signal charge detection is analyzed experimentally and theoretically. From a reset noise measurement experiment, it has been inferred that…”
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A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode by Mutoh, N., Orihara, K., Kawakami, Y., Nakano, T., Kawai, S., Murakami, I., Tanabe, A., Suwazono, S., Arai, K., Teranishi, N., Furumiya, M., Morimoto, M., Hatano, K., Minami, K., Hokari, Y.

“…A newly developed 1/4-inch 380 k pixel IT-CCD image sensor features a novel cell structure in which signal charges are read out from a photodiode (PD) to a…”
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A new concept silicon homojunction infrared sensor by Tohyama, S., Teranishi, N., Konuma, K., Nishimura, M., Arai, K., Oda, E.

“…A new silicon photovoltaic infrared sensor is proposed. Its basic operational principle is demonstrated. The sensor consists of three regions with a…”
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New low-noise output amplifier for high-definition CCD image sensor by Mutoh, N., Morimoto, M., Nishimura, M., Teranishi, N., Oda, E.

“…A new low-noise charge-coupled-device (CCD) output amplifier, the RJG detector, has been developed. The RJG detector incorporates a JFET which has an…”
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