Search Results - "Teramoto, Akinobu"

Interface analysis of oxide free MoS2 films fabricated by solution process by Alam, Md Iftekharul, Sumichika, Rikiya, Tsuchimoto, Junichi, Komeda, Tadahiro, Teramoto, Akinobu

“…We report a solution-based approach for the synthesis of oxidation-free MoS 2 films, focusing on interface analysis. Through a sulfurization-free solution…”
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Control of ion-flux and ion-energy in direct inductively coupled plasma reactor for interfacial-mixing plasma-enhanced atomic layer deposition by Hirayama, Masaki, Teramoto, Akinobu, Sugawa, Shigetoshi

“…The effects of low-energy (<15 eV) high-flux O2+ ion bombardment on the properties of Al2O3 films deposited on 3D nanostructures by plasma-enhanced atomic…”
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Stable yttrium oxyfluoride used in plasma process chamber by Shiba, Yoshinobu, Teramoto, Akinobu, Goto, Tetsuya, Kishi, Yukio, Shirai, Yasuyuki, Sugawa, Shigetoshi

“…An yttrium oxyfluoride (YOF) protective material was developed for the inner wall of plasma process equipment. Using microwave-excited surface-wave…”
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Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition by Teramoto, Akinobu, Saito, Masaya, Suwa, Tomoyuki, Narita, Tetsuo, Kuroda, Rihito, Sugawa, Shigetoshi

“…The hysteresis of the capacitance-voltage (C-V) characteristics of an Al 2 O 3 /n-GaN metal-insulator-semiconductor structure was evaluated under light (white…”
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Performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers by Gaubert, Philippe, Teramoto, Akinobu, Sugawa, Shigetoshi

“…In this study, we investigate the electrical and noise performances of accumulation-mode n- and p-MOSFETs on Si(110) wafers and compare them with conventional…”
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Experimental investigation of localized stress-induced leakage current distribution in gate dielectrics using array test circuit by Park, Hyeonwoo, Teramoto, Akinobu, Kuroda, Rihito, Suwa, Tomoyuki, Sugawa, Shigetoshi

“…Localized stress-induced leakage current (SILC) has become a major problem in the reliability of flash memories. To reduce it, clarifying the SILC mechanism is…”
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Impact of CoFeB surface roughness on reliability of MgO films in CoFeB/MgO/CoFeB magnetic tunnel junction by Park, Hyeonwoo, Teramoto, Akinobu, Tsuchimoto, Jun-Ichi, Hayashi, Marie, Hashimoto, Keiichi, Sugawa, Shigetoshi

“…We investigated the impact of the interface roughness in W-CoFeB-MgO-CoFeB-W structures on MgO reliability using the atomic force microscopy images of a MgO…”
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A Statistical Evaluation of Random Telegraph Noise of In-Pixel Source Follower Equivalent Surface and Buried Channel Transistors by Kuroda, Rihito, Yonezawa, Akihiro, Teramoto, Akinobu, Tsung-Ling Li, Tochigi, Yasuhisa, Sugawa, Shigetoshi

“…Using a large-scale array test circuit, both static characteristics and random telegraph noise (RTN) of in-pixel source follower equivalent transistors of a…”
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Impact of doping concentration on 1/f noise performances of accumulation-mode Si(100) n-MOSFETs by Gaubert, Philippe, Teramoto, Akinobu, Sugawa, Shigetoshi

“…The superiority of highly doped accumulation-mode n-MOSFETs over the conventional inversion-mode ones has been acknowledged in this paper, not only in terms of…”
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High Quality SiO2/Al2O3 Gate Stack for GaN Metal--Oxide--Semiconductor Field-Effect Transistor by Kambayashi, Hiroshi, Nomura, Takehiko, Ueda, Hirokazu, Harada, Katsushige, Morozumi, Yuichiro, Hasebe, Kazuhide, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

“…High quality SiO 2 /Al 2 O 3 gate stack has been demonstrated for GaN metal--oxide--semiconductor (MOS) transistor. We confirmed that Al 2 O 3 could realize a…”
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Effect of drain current on appearance probability and amplitude of random telegraph noise in low-noise CMOS image sensors by Ichino, Shinya, Mawaki, Takezo, Teramoto, Akinobu, Kuroda, Rihito, Park, Hyeonwoo, Wakashima, Shunichi, Goto, Tetsuya, Suwa, Tomoyuki, Sugawa, Shigetoshi

“…Random telegraph noise (RTN), which occurs in in-pixel source follower (SF) transistors, has become one of the most critical problems in high-sensitivity CMOS…”
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Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal-Insulator-Silicon FETs by Kuroda, R., Suwa, T., Teramoto, A., Hasebe, R., Sugawa, S., Ohmi, T.

“…Technology to atomically flatten the silicon surface on (100) orientation large-diameter wafer and the formation technology of an atomically flat insulator…”
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Low-Interface-Trap-Density and High-Breakdown-Electric-Field SiN Films on GaN Formed by Plasma Pretreatment Using Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition by Watanabe, T., Teramoto, A., Nakao, Y., Sugawa, S., Ohmi, T.

“…We investigated the SiN/GaN interface properties formed by the microwave-excited plasma-enhanced chemical vapor deposition (PECVD) with SiH 4 /N 2 /H 2 gases…”
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Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal-oxide-semiconductor field-effect transistors by Obara, Toshiki, Yonezawa, Akihiro, Teramoto, Akinobu, Kuroda, Rihito, Sugawa, Shigetoshi, Ohmi, Tadahiro

“…The random telegraph noise (RTN) characteristics in numerous metal-oxide-semiconductor field-effect transistors were evaluated accurately with small floor…”
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Proposal of tunneling- and diffusion-current hybrid MOSFET: A device simulation study by Furukawa, Kiichi, Teramoto, Akinobu, Kuroda, Rihito, Suwa, Tomoyuki, Hashimoto, Keiichi, Kojiri, Takashi, Sugawa, Shigetoshi

“…Transistors with low-power operation and sufficient signal processing speed have been widely required especially for mobile applications. To meet these…”
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Carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for fin structure design of multi-gate metal-insulator-silicon field-effect transistors by Kuroda, Rihito, Nakao, Yukihisa, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

“…This paper reports on the carrier mobility characteristics of (100), (110), and (551) oriented atomically flattened Si surfaces for the fin structure design of…”
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Formation speed of atomically flat surface on Si (1 0 0) in ultra-pure argon by Li, Xiang, Teramoto, Akinobu, Suwa, Tomoyuki, Kuroda, Rihito, Sugawa, Shigetoshi, Ohmi, Tadahiro

“…The flattening speed of the low temperature atomically flattening technology is evaluated in order to apply atomically flat surface of (1 0 0) orientation on…”
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Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface by Teramoto, A., Hamada, T., Yamamoto, M., Gaubert, P., Akahori, H., Nii, K., Hirayama, M., Arima, K., Endo, K., Sugawa, S., Ohmi, T.

“…In this paper, we demonstrate CMOS characteristics on a Si(110) surface using surface flattening processes and radical oxidation. A Si(110) surface is easily…”
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Hole Mobility in Accumulation Mode Metal--Oxide--Semiconductor Field-Effect Transistors by Gaubert, Philippe, Teramoto, Akinobu, Sugawa, Shigetoshi, Ohmi, Tadahiro

“…The paper deals with the investigation of the mobility in accumulation mode p-channel metal--oxide--semiconductor field-effect transistors (p-MOSFETs). The…”
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Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition by Asahara, Hirokazu, Takamizu, Daiju, Inokuchi, Atsutoshi, Hirayama, Masaki, Teramoto, Akinobu, Saito, Shin, Takahashi, Migaku, Ohmi, Tadahiro

“…MgZnO (magnesium–zinc-oxide) films were grown on (11–20) sapphire substrates and Zn-polar ZnO substrates by plasma enhanced metal-organic chemical vapor…”
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