Search Results - "Teo, S.H.G."

Vertical Silicon-Nanowire Formation and Gate-All-Around MOSFET by Yang, B., Buddharaju, K.D., Teo, S.H.G., Singh, N., Lo, G.Q., Kwong, D.L.

“…This letter presents a vertical gate-all-around silicon nanowire transistor on bulk silicon wafer utilizing fully CMOS compatible technology. High aspect ratio…”
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Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell by Fu, J., Singh, N., Buddharaju, K.D., Teo, S.H.G., Shen, C., Jiang, Y., Zhu, C., Yu, M.B., Lo, G.Q., Balasubramanian, N., Kwong, D.L., Gnani, E., Baccarani, G.

“…This letter presents a high-speed silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cell in gate-all-around Si-nanowire (NW) architecture, which…”
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CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach by Rustagi, S. C., Singh, N., Fang, W. W., Buddharaju, K. D., Omampuliyur, S. R., Teo, S. H. G., Tung, C. H., Lo, G. Q., Balasubramanian, N., Kwong, D. L.

“…This letter demonstrates, for the first time, the integration of gate-all-around (GAA) Si-nanowire transistors into CMOS inverters using top-down approach…”
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Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- \kappa/Metal-Gate Device Structures by Singh, N., Fang, W.W., Rustagi, S.C., Budharaju, K.D., Teo, S.H.G., Mohanraj, S., Lo, G.Q., Balasubramanian, N., Kwong, D.-L.

“…This letter reports, for the first time, the observation of mechanical stress from metal-gate layer on the Si nanowires formed by the top-down scheme…”
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Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- [kappa]/Metal-Gate Device Structures by Singh, N, Fang, W.W, Rustagi, S.C, Budharaju, K.D, Teo, S.H.G, Mohanraj, S, Lo, G.Q, Balasubramanian, N, Kwong, D.-L

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Rod type photonic crystal optical line defect waveguides with optical modulations by Teo, S.H.G., Liu, A.Q., Singh, J., Yu, M.B., Lo, G.Q.

“…This paper reports the design and principles of two dimensional rod-type photonic crystal (PhC) line defect waveguides for bandgap based optical waveguiding,…”
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Observation of Metal-Layer Stress on Si Nanowires in Gate-All-Around High- K/Metal-Gate Device Structures by Singh, N, Fang, W W, Rustagi, S C, Budharaju, K D, Teo, S.H.G., Mohanraj, S, Lo, G Q, Balasubramanian, N, Kwong, D.-L.

“…This letter reports, for the first time, the observation of mechanical stress from metal-gate layer on the Si nanowires formed by the top-down scheme…”
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Gate-all-around Si-nanowire CMOS inverter logic fabricated using top-down approach by Buddharaju, K.D., Singh, N., Rustagi, S.C., Teo, S.H.G., Wong, L.Y., Tang, L.J., Tung, C.H., Lo, G.Q., Balasubramanian, N., Kwong, D.L.

“…We present, for the first time , the monolithic integration of Gate-Ail-Around (GAA) Si-nanowire FETs into CMOS logic using top-down approach. The drive…”
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CMOS compatible Gate-All-Around Vertical silicon-nanowire MOSFETs by Yang, B., Buddharaju, K.D., Teo, S.H.G., Fu, J., Singh, N., Lo, G.Q., Kwong, D.L.

“…We present vertical gate-all-around (GAA) silicon nanowire transistors on bulk silicon wafer utilizing fully CMOS compatible technology. High aspect ratio (up…”
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Trap Layer Engineered Gate-All-Around Vertically Stacked Twin Si -Nanowire Nonvolatile Memory by Fu, J., Buddharaju, K.D., Teo, S.H.G., Chunxiang Zhu, Yu, M.B., Singh, N., Lo, G.Q., Balasubramanian, N., Kwong, D.L.

“…Trap layer engineered gate-all-around (GAA) silicon nanowire SONOS memory showing excellent device performance is demonstrated for the first time. Nitride and…”
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Light-speed optical control with nano-opto-electronic device by Teo, S.H.G., Singh, J., Yu, M.B., Zhang, J.B., Shi, L.P., Hong, M.H., Liu, A.Q.

“…This paper presents the design, fabrication and measurement results of a nano-photonic bandgap crystal (PhC) integrated circuit device. The PhC comprises of…”
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Pure photonic crystal waveguiding for signal processing at optical junctions by Teo, S.H.G., Liu, A.Q., Singh, J., Yu, M.B., Wu, J.H., Zhang, X.M.

“…This paper describes a photonic crystal (PhC) waveguide of two-dimensional (2D) photonic bandgap lattice structure. Typically, PhC waveguides demonstrated have…”
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