GaAs/AlGaAs based quantum Bragg mirror detector

In this work we present a far-infrared asymmetric quantum Bragg mirror detector (QBMD) based on GaAs/AlGaAs. The heterostructure is designed to explore a transition at 111 meV (11,2 μm) between the ground state and a leaky electronic state in the continuum. The calculated photovoltaic photocurrent s...

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Bibliographic Details
Published in:	2023 37th Symposium on Microelectronics Technology and Devices (SBMicro) pp. 1 - 3
Main Authors:	Penello, Germano Maioli, Pereira, Pedro Henrique, Torelly, Guilherme Monteiro, Fernandes, Fernando Massa, Rushing, James, Tenorio, Jacob A., Simmonds, Paul, Quivy, Alain Andre
Format:	Conference Proceeding
Language:	English
Published:	IEEE 28-08-2023
Subjects:	Absorption Detectors far-infrared III-V semiconductors leaky electronic state Microelectronics Mirrors Photoconductivity Photovoltaic systems Quantum Bragg mirror detector quasi-bound state in the continuum Stationary state
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Summary:	In this work we present a far-infrared asymmetric quantum Bragg mirror detector (QBMD) based on GaAs/AlGaAs. The heterostructure is designed to explore a transition at 111 meV (11,2 μm) between the ground state and a leaky electronic state in the continuum. The calculated photovoltaic photocurrent shows a good agreement with the expected absorption.
ISSN:	2832-420X
DOI:	10.1109/SBMicro60499.2023.10302623