Search Results - "Tengdelius, Lina"

Magnetron Sputter Epitaxy of High-Quality GaN Nanorods on Functional and Cost-Effective Templates/Substrates by Serban, Elena, Palisaitis, Justinas, Junaid, Muhammad, Tengdelius, Lina, Högberg, Hans, Hultman, Lars, Persson, Per, Birch, Jens, Hsiao, Ching-Lien

“…We demonstrate the versatility of magnetron sputter epitaxy by achieving high-quality GaN nanorods on different substrate/template combinations, specifically…”
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ZrB2 Thin Films Growth and Characterization by Tengdelius, Lina

“…Zirconium diboride, ZrB2, is a ceramic material with bulk properties such as high melting point (3245 °C), high hardness (23 GPa), and low resistivity (~8…”
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Hard and elastic epitaxial ZrB2 thin films on Al2O3(0001) substrates deposited by magnetron sputtering from a ZrB2 compound target by Tengdelius, Lina, Broitman, Esteban, Lu, Jun, Eriksson, Fredrik, Birch, Jens, Nyberg, Tomas, Hultman, Lars, Högberg, Hans

“…Zirconium diboride (ZrB2) exhibits high hardness and high melting point, which is beneficial for applications in for e.g. metal cutting. However, there is…”
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Chemical bonding in epitaxial ZrB2 studied by X-ray spectroscopy by Magnuson, Martin, Tengdelius, Lina, Greczynski, Grzegorz, Hultman, Lars, Högberg, Hans

“…The chemical bonding in an epitaxial ZrB2 film is investigated by Zr K-edge (1s) X-ray absorption near-edge structure (XANES) and extended X-ray absorption…”
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Chemical Bonding in Epitaxial ZrB 2 Studied by X-ray Spectroscopy by Magnuson, Martin, Tengdelius, Lina, Greczynski, Grzegorz, Hultman, Lars, Högberg, Hans

“…The chemical bonding in an epitaxial ZrB 2 film is investigated by Zr K -edge (1s) X-ray absorption near-edge structure (XANES) and extended X-ray absorption…”
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Reactive magnetron sputtering of tungsten target in krypton/trimethylboron atmosphere by Magnuson, Martin, Tengdelius, Lina, Eriksson, Fredrik, Samuelsson, Mattias, Broitman, Esteban, Greczynski, Grzegorz, Hultman, Lars, Högberg, Hans

“…W-B-C films were deposited on Si(100) substrates held at elevated temperature by reactive sputtering from a W target in Kr/trimethylboron (TMB) plasmas…”
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Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power by Tengdelius, Lina, Greczynski, Grzegorz, Chubarov, Mikhail, Lu, Jun, Forsberg, Urban, Hultman, Lars, Janzén, Erik, Högberg, Hans

“…Zirconium diboride (ZrB2) thin films have been deposited on 4H-SiC(0001) substrates by direct current magnetron sputtering from a compound target. The effect…”
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Growth and Characterization of ZrB2 Thin Films by Tengdelius, Lina

“…In this thesis, growth of ZrB₂ thin films by direct current magnetron sputtering is investigated using a high vacuum industrial scale deposition system and an…”
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High-temperature nanoindentation of epitaxial ZrB2 thin films by Broitman, Esteban, Tengdelius, Lina, Hangen, Ude D., Lu, Jun, Hultman, Lars, Högberg, Hans

“…We use in-situ heated nanoindentation to investigate the high-temperature nanomechanical properties of epitaxial and textured ZrB2 films deposited by magnetron…”
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Atom probe tomography field evaporation characteristics and compositional corrections of ZrB2 by Engberg, David L.J., Tengdelius, Lina, Högberg, Hans, Thuvander, Mattias, Hultman, Lars

“…The microstructure of stoichiometric ZrB2.0 and B over-stoichiometric ZrB2.5 thin films has been studied using atom probe tomography (APT), X-ray diffraction,…”
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Compositional dependence of epitaxial Ti n+1 SiC n MAX-phase thin films grown from a Ti 3 SiC 2 compound target by Magnuson, Martin, Tengdelius, Lina, Greczynski, Grzegorz, Eriksson, Fredrik, Jensen, Jens, Lu, Jun, Samuelsson, Mattias, Eklund, Per, Hultman, Lars, Högberg, Hans

“…The authors investigate sputtering of a Ti 3 SiC 2 compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the…”
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ZrB2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB2 target by Tengdelius, Lina, Lu, Jun, Forsberg, Urban, Li, Xun, Hultman, Lars, Janzén, Erik, Högberg, Hans

“…ZrB2 films were deposited on 900°C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical…”
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Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100) by Tengdelius, Lina, Samuelsson, Mattias, Jensen, Jens, Lu, Jun, Hultman, Lars, Forsberg, Urban, Janzén, Erik, Högberg, Hans

“…ZrB2 thin films have been synthesized using direct current magnetron sputtering from a ZrB2 compound target onto 4H-SiC(0001) and Si(100) substrates kept at…”
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Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target by Magnuson, Martin, Tengdelius, Lina, Greczynski, Grzegorz, Eriksson, Fredrik, Jensen, Jens, Lu, Jun, Samuelsson, Mattias, Eklund, Per, Hultman, Lars, Högberg, Hans

“…The authors investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 °C as well as the…”
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Atom probe tomography field evaporation characteristics and compositional corrections of ZrB 2 by Engberg, David L. J., Tengdelius, Lina, Högberg, Hans, Thuvander, Mattias, Hultman, Lars

“…The microstructure of stoichiometric ZrB2.0 and B over-stoichiometric ZrB2.5 thin films has been studied using atom probe tomography (APT), X-ray diffraction,…”
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High-temperature nanoindentation of epitaxial ZrB 2 thin films by Broitman, Esteban, Tengdelius, Lina, Hangen, Ude D., Lu, Jun, Hultman, Lars, Högberg, Hans

“…We use in-situ heated nanoindentation to investigate the high-temperature nanomechanical properties of epitaxial and textured ZrB 2 films deposited by…”
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Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111) by Tengdelius, Lina, Birch, Jens, Lu, Jun, Hultman, Lars, Forsberg, Urban, Janzén, Erik, Högberg, Hans

“…Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H‐SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at a high…”
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ZrB 2 thin films deposited on GaN(0001) by magnetron sputtering from a ZrB 2 target by Tengdelius, Lina, Lu, Jun, Forsberg, Urban, Li, Xun, Hultman, Lars, Janzén, Erik, Högberg, Hans

“…ZrB 2 films were deposited on 900 °C-preheated or non-preheated GaN(0001) surfaces by direct current magnetron sputtering from a compound target. Analytical…”
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Stoichiometric, epitaxial ZrB sub(2) thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power by Tengdelius, Lina, Greczynski, Grzegorz, Chubarov, Mikhail, Lu, Jun, sberg, Urban, Hultman, Lars, Janzen, Erik, Hogberg, Hans

“…Zirconium diboride (ZrB sub(2)) thin films have been deposited on 4H-SiC(0001) substrates by direct current magnetron sputtering from a compound target. The…”
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Cubic boron phosphide epitaxy on zirconium diboride by Padavala, Balabalaji, Al Atabi, H., Tengdelius, L., Lu, J., Högberg, H., Edgar, J.H.

“…•Cubic boron phosphide epitaxy on ZrB2/SiC and bulk ZrB2 single crystals was demonstrated.•Crystalline defects in the cubic boron phosphide BP films were…”
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