Cubic boron phosphide epitaxy on zirconium diboride

Cubic boron phosphide epitaxy on zirconium diboride

•Cubic boron phosphide epitaxy on ZrB2/SiC and bulk ZrB2 single crystals was demonstrated.•Crystalline defects in the cubic boron phosphide BP films were identified.•The strain states of boron phosphide on the two types of substrates were established. Cubic boron phosphide (BP) is one of the least s...

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Bibliographic Details
Published in:Journal of crystal growth Vol. 483; no. C; pp. 115 - 120
Main Authors: Padavala, Balabalaji, Al Atabi, H., Tengdelius, L., Lu, J., Högberg, H., Edgar, J.H.
Format: Journal Article
Language:English
Published: Amsterdam Elsevier B.V 01-02-2018
Elsevier BV
Elsevier
Subjects:
A1. Crystal morphology
A1. Defects
A1. Substrates
A3. Chemical vapor deposition processes
B2. Semiconducting III-V materials
Boron phosphides
Compressive properties
Electron microscopy
Epitaxial layers
Epitaxy
Group III-V semiconductors
Lattice parameters
Polycrystals
Refractory materials
Semiconductors
Single crystals
Substrates
Thermal expansion
Thermal stability
Transmission electron microscopy
Zirconium compounds
A3. Chemical vapor deposition processes
A1. Crystal morphology
B2. Semiconducting III-V materials
A1. Substrates
A1. Defects
Semiconducting III-V materials
Chemical vapor deposition processes
Crystal morphology
Substrates
Defects
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Summary:•Cubic boron phosphide epitaxy on ZrB2/SiC and bulk ZrB2 single crystals was demonstrated.•Crystalline defects in the cubic boron phosphide BP films were identified.•The strain states of boron phosphide on the two types of substrates were established. Cubic boron phosphide (BP) is one of the least studied III-V compound semiconductors, in part because it is difficult to prepare in high quality form. In this study, zirconium diboride (ZrB2) was studied as a potential substrate for BP epitaxial layers, because of its advantages of a low lattice constant mismatch and high thermal stability. Two types of substrates were considered: ZrB2(0 0 0 1) epitaxial films on 4H-SiC(0 0 0 1) and bulk ZrB2(0 0 0 1) single crystals. The optimal temperature for epitaxy on these substrates was 1100 °C; higher and lower temperatures resulted in polycrystalline films. The BP film/ZrB2 interface was abrupt as confirmed by cross-sectional transmission electron microscopy, attesting to the stability of ZrB2 under BP deposition conditions. The BP films were under compressive and tensile strain on ZrB2 and ZrB2/4H-SiC substrates, respectively, as determined by Raman spectroscopy, due to differences in the substrate/film coefficients of thermal expansion. This study suggests that with further optimization, ZrB2 can be an excellent substrate for BP epitaxial films.
Bibliography:USDOE
GEGF001846
ISSN:0022-0248
1873-5002
1873-5002
DOI:10.1016/j.jcrysgro.2017.11.014